MBN1200E25C
Abstract: mbn1200e25c igbt
Text: IGBT MODULE Spec.No.IGBT-SP-05023 R0 MBN1200E25C Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability. delta Tc=70℃, N>30,000cycles ∗ Low noise due to ultra soft fast recovery diode. ∗ High speed, low loss IGBT module.
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IGBT-SP-05023
MBN1200E25C
000cycles)
MBN1200E25C
mbn1200e25c igbt
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fin heat sink igbt
Abstract: diode chopper MBL1200E17D
Text: Spec.No.IGBT-SP-03013 R2 IGBT MODULE MBL1200E17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability. delta Tc=70℃,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode
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IGBT-SP-03013
MBL1200E17D
000cycles)
120mA,
100kHz,
120nF
125oC
fin heat sink igbt
diode chopper
MBL1200E17D
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MBN400C20
Abstract: ultra low forward voltage diode
Text: IGBT MODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module.
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MBN400C20
000cycles)
MBN400C20
ultra low forward voltage diode
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MBL800E33D
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-03009 R2 P1/5 IGBT MODULE MBL800E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability.(delta Tc=70 ,N>30,000cycles) ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode
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IGBT-SP-03009
MBL800E33D
000cycles)
MBL800E33D
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Y11W
Abstract: MBL1200E17D
Text: IGBT MODULE MBL1200E17D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability. delta Tc=70 ,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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MBL1200E17D
000cycles)
Y11W
MBL1200E17D
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Untitled
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-10011-R3 P1/4 6in1 IGBT Module MBB600TV6A PRELIMINARY SPECIFICATION Silicon N-channel IGBT 1. FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. 2. ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
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IGBT-SP-10011-R3
MBB600TV6A
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Untitled
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-10009-R3 P1/3 6in1 IGBT Module MBB350TV6 PRELIMINARY SPECIFICATION Silicon N-channel IGBT 1. FEATURES * High speed, low loss IGBT module. * Low thermal impedance due to direct liquid cooling. * High reliability, high durability module. 2. ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
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IGBT-SP-10009-R3
MBB350TV6
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mbn400c20
Abstract: No abstract text available
Text: IGBT MODU ODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module.
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MBN400C20
000cycles)
400mA
100KHz
150nH
150nH,
PDE-N400C20-0
mbn400c20
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-05023 R1 MBN1200E25C Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70 , N>30,000cycles ∗ Low noise due to ultra soft fast recovery diode. ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input
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IGBT-SP-05023
MBN1200E25C
000cycles)
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MBN1200D33A
Abstract: No abstract text available
Text: IGBT MODULE MBN1200D33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling 6-M8 diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module.
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MBN1200D33A
000cycles)
MBN1200D33A
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GT60M303
Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)
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GT60M303
GT60M303
GT60M303 circuit
toshiba code igbt
TOSHIBA IGBT
TOSHIBA IGBT GT60M303
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-03013 R7 P1 MBL1200E17D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70K , N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-03013
MBL1200E17D
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-03009 R3 MBL800E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-03009
MBL800E33D
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-06008
MBL400E33D
000cycles)
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GT60M303 application
Abstract: GT60M303 circuit igbt failure rate
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.
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GT60M303
GT60M303 application
GT60M303 circuit
igbt failure rate
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06008R5
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-06008 R5 MBL400E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC, N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-06008
MBL400E33D
000cycles)
06008R5
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-03009 R3 MBL800E33D Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70oC,N>30,000cycles ∗ High speed, low loss IGBT module. ∗ Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-03009
MBL800E33D
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-03013 R7 P1 MBL1200E17D Silicon N-channel IGBT FEATURES High thermal fatigue durability. delta Tc=70K , N>30,000cycles High speed, low loss IGBT module. Low noise due to built-in free-wheeling diode – ultra soft fast recovery diode(USFD).
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IGBT-SP-03013
MBL1200E17D
000cycles)
200mission
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GT60M303 application
Abstract: GT60M303 gt60m303 application notes
Text: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25 s TYP.
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GT60M303
GT60M303 application
GT60M303
gt60m303 application notes
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-02007 R8 MBN2400E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC) ∗ High thermal fatigue durability. (∆Tc=70K, N>30,000cycles)
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IGBT-SP-02007
MBN2400E17D
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-02007 R8 MBN2400E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC) ∗ High thermal fatigue durability. (∆Tc=70K, N>30,000cycles)
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IGBT-SP-02007
MBN2400E17D
000cycles)
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MG150J7KS50
Abstract: No abstract text available
Text: MG150J7KS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS50 High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance 7 IGBTs built into 1 package. Enhancement-mode High speed type IGBT :
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MG150J7KS50
2-110A1B
MG150J7KS50
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES High speed low loss IGBT. Low-injection punch-through IGBT. Low driving power due to low input capacitance MOS gate. High speed low recovery loss diode.
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IGBT-SP-13012
P1/10
MBN800E33D-AX
000cycles)
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE MIG50J804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3ji 50A /600V High Speed Type IGBT
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MIG50J804H
/600V
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