1N4448
Abstract: LL4448
Text: LL4448 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard 1N4448 These diode are delivered taped. Details see Taping.
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LL4448
1N4448
100uA
100MHz,
1N4448
LL4448
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1N4148
Abstract: LL4148
Text: LL4148 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard 1N4148 These diode are delivered taped. Details see Taping.
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LL4148
1N4148
100KHz
100uA
100MHz,
1N4148
LL4148
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1N4448
Abstract: LL4448
Text: 1N4448 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diode fast switching diode. This diode is also available in MiniMELF case with the type designation LL4448. DIM ENSIONS inches DIM Absolute Maximum Ratings Ta=25 mm Min. Max. Min. Max.
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1N4448
LL4448.
100uA
100MHz,
1N4448
LL4448
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BAV20W Preliminary DIODE SILICON EPITAXIAL PLANAR DIODE 1 2 SOD-123 DESCRIPTION The UTC BAV20W is a silicon epitaxial planar diode. The UTC BAV20W is suitable for general purpose application. 1 2 FEATURES SOD-323 * Planar diode
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BAV20W
OD-123
BAV20W
OD-323
BAV20WG-CA2-R
BAV20WG-CB2-R
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ultrafast igbt
Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching
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of169
1200-volt
CPWR-AN03,
ultrafast igbt
IGBT 50 amp 1000 volt
calculation of IGBT snubber
CPWR-AN03
Cree SiC MOSFET
12 VOLT 10 AMP smps
24 volt 10 amp smps
power diode
AN-11A
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1N4148
Abstract: LL4148
Text: 1N4148 SILICON EPITAXIAL PLANAR DIODE Features Silicon Epitaxial Planar Diodes fast switching diode. This diode is also available in MiniMELF case with the type designation LL4148. DIM ENSIONS inches DIM Absolute Maximum Ratings Ta=25 mm Min. Max. Min. Max.
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1N4148
LL4148.
100KHz
100uA
100MHz,
1N4148
LL4148
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UMMSZ52XXA Preliminary DIODE SURFACE MOUNT SILICON ZENER DIODE DESCRIPTION 1 The UTC UMMSZ52XXA is a surface mount silicon zener diode, it uses UTC’s advanced technology to provide customers with low reverse leakage current, etc.
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UMMSZ52XXA
UMMSZ52XXA
OD-123
UMMSZ52XXAG-CA2-R
QW-R601-094
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Untitled
Abstract: No abstract text available
Text: J£II£LJ ^zml-Conducto'i \*S i/ i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1N4148M SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode fast switching diode. max, 1.90 Cathode
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1N4148M
DO-34
100mA
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characteristics of zener diode in reverse bias
Abstract: zener diode voltage drop and breakdown bidirectional zener Temperature Stabilizer diode about zener diode ZENER DIODE with Iz max Iz min zener diode constant current diodes bidirectional breakdown diodes
Text: SILICON ZENER DIODES Zener diodes are special silicon diodes which have a relatively low, defined breakdown voltage, called the Zener voltage. At low reverse voltages a Zener diode behaves in a similar manner to an ordinary silicon diode, that is, it passes
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characteristics of zener diode in reverse bias
Abstract: fast zener diode stabiliser circuit diagram zu zener zener diode voltage drop and breakdown zener zu bidirectional zener diode Temperature Stabilizer diode
Text: VISHAY Vishay Semiconductors Silicon Zener Diodes Zener diodes are special silicon diodes which have a relatively low, defined breakdown voltage, called the Zener voltage. At low reverse voltages a Zener diode behaves in a similar manner to an ordinary silicon diode, that is, it
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13-Jan-04
characteristics of zener diode in reverse bias
fast zener diode
stabiliser circuit diagram
zu zener
zener diode voltage drop and breakdown
zener zu
bidirectional zener diode
Temperature Stabilizer diode
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IGBT 50 amp 1000 volt
Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode
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Untitled
Abstract: No abstract text available
Text: SMD Switching Diode SMD Diodes Specialist CDSNC4148 High Speed Features 1206 Designed for mounting on small surface. Silicon Epitaxial Planar Diode. 0.134 3.40 0.118(3.00) Fast switching diode. Use in sensitive electronics protection against voltage transients induced by inductive load
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CDSNC4148
QW-B0019
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CDSNC4148
Abstract: DIODE SMD 1206
Text: SMD Switching Diode SMD Diodes Specialist CDSNC4148 High Speed Features 1206 Designed for mounting on small surface. Silicon Epitaxial Planar Diode. 0.134 3.40 0.118(3.00) Fast switching diode. Use in sensitive electronics protection against voltage transients induced by inductive load
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CDSNC4148
NC/1206
QW-B0019
CDSNC4148
DIODE SMD 1206
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NTE506
Abstract: No abstract text available
Text: NTE506 Silicon Rectifier Diode Description The NTE506 is a silicon rectifier diode in an axial lead package designed for fast recovery, damper and blanking applications. Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single
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NTE506
NTE506
500ns
500mA,
-250mA.
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NTE2334
Abstract: ZENER DIODE 5v CAPACITY
Text: NTE2334 Silicon NPN Transistor Darlington Driver w/Internal Damper and Zener Diode Description: The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220 type package designed for use in applications such as the switching of the L load of a motor driver,
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NTE2334
NTE2334
100mH,
ZENER DIODE 5v CAPACITY
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LL4151
Abstract: No abstract text available
Text: 1N 4151 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode This diode is also available in other case styles including the MiniMELF case with the type designation LL4151. Mechanical Data Case: DO-34, DO-35 Glass Case
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LL4151.
DO-34,
DO-35
150OC
100MHz,
LL4151
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NEC IR
Abstract: 1SS303 NEC IR application note
Text: DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper.
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1SS303
150ce
NEC IR
1SS303
NEC IR application note
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1n4148
Abstract: 1N4148 silicon diodes thermal diode 1n4148 diode 1N4148 SEMTECH ELECTRONICS 1n4148 1n4148 mark JEDEC 1N4148 1N4148 diode DIODE 1N4148 characteristics diode 4148
Text: 1N4148 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxiai Planar Diode fast switching diode. max. 1.90 max. 1.90 This diode is also available in M iniM ELF case with the type designation LL4148. I r -Cathode - Cathode Mark M ark in W hite max. 0.520 max. 0.420
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1N4148
LL4148.
DO-35
DO-34
1n4148
1N4148 silicon diodes
thermal diode 1n4148
diode 1N4148
SEMTECH ELECTRONICS 1n4148
1n4148 mark
JEDEC 1N4148
1N4148 diode
DIODE 1N4148 characteristics
diode 4148
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1N4448
Abstract: jy 1n4448 LL4448 MARK 1N p5001
Text: 1N 4448 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode fast switching diode. max. 1.90 This diode is also available in MiniMELF case with type desigantion LL4448. Cathode M ark max. 0.520 Glass case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 °C
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LL4448.
DO-35
1N4448
1N4448
jy 1n4448
LL4448
MARK 1N
p5001
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ESJC01-12B
Abstract: IR 9515 ESJC01-09B a1t diode ESJC01
Text: ESJC01 9kV, 12kV : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC01 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. • : Features Small size
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ESJC01
ESJC01-09B
ESJC01-12B
ESJC01
ESJC0I-09B
ESX0I-09B
ESJC0I-098
IR 9515
a1t diode
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b49 diode
Abstract: ESJC04-05 ESJC04 F151 T760 micro wave oven esjc0405
Text: ESJC 0 4 5kv : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC04(*, ESJC04 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. Features • 'm Small size
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ESJC04
EaTS30S3
I95t/R89
Shl50
b49 diode
ESJC04-05
F151
T760
micro wave oven
esjc0405
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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1N4148M
Abstract: No abstract text available
Text: 1N4148M SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode fast switching diode. max. 1.90 Cathode M a rk in W hite max. 0.420 Glass case JEDEC DO-34 Dimensions in mm Absolute Maximum Ratings T = 25 °C Symbol Value Reverse Voltage vR 50 V Peak Reverse Voltage
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1N4148M
DO-34
1N4148M
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DIIJ4
Abstract: UM 9515 IR 9515
Text: E S J C 0 7 9kV, 12kV I Outline Drawings k _ HIGH VOLTAGE SILICON DIODE E S JC 0 7 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features
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ESJC07-12B
ESJC07-09B
I95t/R89)
DIIJ4
UM 9515
IR 9515
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