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Vishay Siliconix SIJ462DP-T1-GE3 MOSFET N-CH 60V 46.5A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIJ462DP-T1-GE3	Digi-Reel			1	1 $1.44 10 $1.44 100 $1.44 1000 $1.44 10000 $1.44	Buy Now
	SIJ462DP-T1-GE3	Cut Tape			1	1 $1.44 10 $1.44 100 $1.44 1000 $1.44 10000 $1.44	Buy Now
	SIJ462DP-T1-GE3	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.54104	Buy Now
Vishay Intertechnologies SIJ462DP-T1-GE3 Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 46.5A; Idm: 100A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIJ462DP-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.84	Get Quote

SIJ462DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIJ462DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 46.5A SO-8L		Original	PDF

SIJ462DP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiJ462DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) 0.0080 at VGS = 10 V 46.5 0.0100 at VGS = 6 V 41.6 0.0125 at VGS = 4.5 V 37.2 60 Qg (Typ.) 9.3 nC APPLICATIONS PowerPAK SO-8L m 5m 6.1 • Primary Side Switching	Original	PDF	SiJ462DP SiJ462DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
PowerPAK 1212-8 Abstract: sir640 SiA442DJ SO8L PowerPAK SO-8 Si4038DY SUM90N06-02P SiS488DN Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Low RDS ON of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V I INNOVAT AND TEC O L OGY 40 V and 60 V TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 Higher Efficiency and Power Density with a Combination of	Original	PDF	SC-70 O-220 O-236 SiR640DP Si4038DY SiS488DN SiR662DP SUP90N06-02P SUM90N06-02P Si4062DY PowerPAK 1212-8 sir640 SiA442DJ SO8L PowerPAK SO-8
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs – Low RDS on of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V 40 V and 60 V TrenchFET Gen IV Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics	Original	PDF	SiR640DP Si4038DY SiS488DN SiR662DP O-220 O-263 SUP90N06-02P SUM90N06-02P Si4062DY SiJ462DP
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs	Original	PDF	O-263) Si4038DY SiS488DN SUM50020EL SUP50020EL SiR662DP SiR688DP SiR664DP SiJ462DP SiS862DN
N-Channel MOSFETs Abstract: No abstract text available Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	PDF	SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs