IRFPG30
Abstract: 91252
Text: IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 5.0 Qg (Max.) (nC) 80 Qgs (nC) 10 Qgd (nC) 42 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFPG30,
SiHFPG30
O-247AC
O-220AB
O-247AC
O-218
11-Mar-11
IRFPG30
91252
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 5.0 Qg (Max.) (nC) 80 Qgs (nC) 10 Qgd (nC) 42 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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IRFPG30,
SiHFPG30
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRFPG30
Abstract: No abstract text available
Text: IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 5.0 Qg (Max.) (nC) 80 Qgs (nC) 10 Qgd (nC) 42 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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IRFPG30,
SiHFPG30
O-247
O-247
18-Jul-08
IRFPG30
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PDF
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12791
Abstract: No abstract text available
Text: IRFPG30_RC, SiHFPG30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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IRFPG30
SiHFPG30
AN609,
09-Jul-10
12791
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 5.0 Qg (Max.) (nC) 80 Qgs (nC) 10 Qgd (nC) 42 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFPG30,
SiHFPG30
2002/95/EC
O-247AC
O-247AC
O-220hay
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 5.0 Qg (Max.) (nC) 80 Qgs (nC) 10 Qgd (nC) 42 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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IRFPG30,
SiHFPG30
O-247
O-247
O-220
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 5.0 Qg (Max.) (nC) 80 Qgs (nC) 10 Qgd (nC) 42 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFPG30,
SiHFPG30
O-247AC
O-220AB
O-247AC
O-218
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 5.0 Qg (Max.) (nC) 80 Qgs (nC) 10 Qgd (nC) 42 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFPG30,
SiHFPG30
2002/95/EC
O-247AC
O-247AC
O-220trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 1000 RDS(on) (Ω) VGS = 10 V 5.0 Qg (Max.) (nC) 80 Qgs (nC) 10 Qgd (nC) 42 Configuration Single D COMPLIANT Third generation Power MOSFETs from Vishay provide the
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Original
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IRFPG30,
SiHFPG30
2002/95/EC
O-247AC
O-247AC
O-220trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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