IRFP360LC
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
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IRFP360LC,
SiHFP360LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFP360LC
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IRFP360LC
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFP360LC,
SiHFP360LC
O-247
18-Jul-08
IRFP360LC
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Untitled
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFP360LC,
SiHFP360LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
IRFP360LC
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFP360LC,
SiHFP360LC
2002/95/EC
11-Mar-11
IRFP360LC
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Untitled
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFP360LC,
SiHFP360LC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFP360LC_RC, SiHFP360LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFP360LC
SiHFP360LC
AN609,
18-Jun-10
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IRFP360LC
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFP360LC,
SiHFP360LC
O-247AC
11-Mar-11
IRFP360LC
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IRFP360LC
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFP360LC,
SiHFP360LC
O-247
18-Jul-08
IRFP360LC
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Untitled
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFP360LC,
SiHFP360LC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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PDF
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IRFP360LC,
SiHFP360LC
12-Mar-07
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