s8143
Abstract: IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S SiHFBE30S-E3
Text: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration
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Original
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PDF
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IRFBE30S,
IRFBE30L,
SiHFBE30S
SiHFBE30L
O-263)
O-262)
18-Jul-08
s8143
IRFBE30L
IRFBE30S
SiHFBE30L-E3
SiHFBE30S-E3
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Untitled
Abstract: No abstract text available
Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling
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Original
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PDF
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IRFBE30S,
SiHFBE30S
IRFBE30L,
SiHFBE30L
2002/95/EC
O-262)
O-263)
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling
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Original
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PDF
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IRFBE30S,
SiHFBE30S
IRFBE30L,
SiHFBE30L
2002/95/EC
O-263)
O-262)
2002/95/EC.
2002/95/EC
2011/65/EU.
|
Untitled
Abstract: No abstract text available
Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling
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Original
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PDF
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IRFBE30S,
SiHFBE30S
IRFBE30L,
SiHFBE30L
2002/95/EC
O-262)
O-263)
18-Jul-08
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AN609
Abstract: IRFBE30L IRFBE30S SiHFBE30S
Text: IRFBE30S_RC, SiHFBE30S_RC, IRFBE30L_RC, SiHFBE30L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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PDF
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IRFBE30S
SiHFBE30S
IRFBE30L
SiHFBE30L
AN609,
20-Apr-10
AN609
|
Untitled
Abstract: No abstract text available
Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling
|
Original
|
PDF
|
IRFBE30S,
SiHFBE30S
IRFBE30L,
SiHFBE30L
2002/95/EC
O-262)
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
|
Untitled
Abstract: No abstract text available
Text: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration
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Original
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PDF
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IRFBE30S,
IRFBE30L,
SiHFBE30S
SiHFBE30L
O-262)
O-263)
12-Mar-07
|
Untitled
Abstract: No abstract text available
Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling
|
Original
|
PDF
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IRFBE30S,
SiHFBE30S
IRFBE30L,
SiHFBE30L
2002/95/EC
O-262)
O-263)
11-Mar-11
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