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Vishay Siliconix SIHF10N40D-E3 MOSFET N-CH 400V 10A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF10N40D-E3	Tube	577		1	1 $2.24 10 $1.435 100 $2.24 1000 $0.77878 10000 $0.77878	Buy Now
Vishay Intertechnologies SIHF10N40D-E3
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Bristol Electronics	SIHF10N40D-E3		800			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIHF10N40D-E3		640			1 $2.4595 10 $2.4595 100 $1.2298 1000 $0.9838 10000 $0.9838	Buy Now
TME	SIHF10N40D-E3				1	1 $1.26 10 $1.13 100 $0.9 1000 $0.83 10000 $0.83	Get Quote

SIHF10N40D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHF10N40D-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 10A TO-220 FPAK		Original	PDF

SIHF10N40D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SIHF10N40D-E3 Abstract: No abstract text available Text: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHF10N40D O-220 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIHF10N40D-E3	PDF
Untitled Abstract: No abstract text available Text: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHF10N40D 2011/65/EU O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
84-0244 Abstract: No abstract text available Text: SiHF10N40D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHF10N40D AN609, 8121m 0071m 7111m 5902m 1941m 9755m 2440m 23-May-12 84-0244	PDF
Untitled Abstract: No abstract text available Text: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	SiHF10N40D 2011/65/EU O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF