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    SIGC121T120R2C Search Results

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    SIGC121T120R2C Price and Stock

    Infineon Technologies AG SIGC121T120R2CSX1SA1

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC121T120R2CSX1S)
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    Avnet Americas SIGC121T120R2CSX1SA1 Waffle Pack 972
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    EBV Elektronik SIGC121T120R2CSX1SA1 53 Weeks 1
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    Infineon Technologies AG SIGC121T120R2CSYX1SA1

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC121T120R2CSYX1)
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    Avnet Americas SIGC121T120R2CSYX1SA1 Waffle Pack 32
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    Infineon Technologies AG SIGC121T120R2CLX1SA5

    IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC121T120R2CLX1S)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIGC121T120R2CLX1SA5 Waffle Pack 972
    • 1 -
    • 10 -
    • 100 -
    • 1000 $12.2122
    • 10000 $11.36674
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    EBV Elektronik SIGC121T120R2CLX1SA5 71 Weeks 1
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    Infineon Technologies AG SIGC121T120R2CX1SA5

    IGBT CHIPS (Alt: SP000012015)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik SIGC121T120R2CX1SA5 53 Weeks 1
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    SIGC121T120R2C Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIGC121T120R2C Infineon Technologies IGBT Chip in NPT-Technology Original PDF
    SIGC121T120R2C Infineon Technologies SIGC121T120R2C, 1200V, 75A Original PDF
    SIGC121T120R2CL Infineon Technologies IGBT Chip in NPT-Technology Original PDF
    SIGC121T120R2CL Infineon Technologies SIGC121T120R2CL, 1200V, 75A Original PDF
    SIGC121T120R2CS Infineon Technologies IGBT Chip in NPT-Technology Original PDF
    SIGC121T120R2CS Infineon Technologies SIGC121T120R2CS, 1200V, 75A Original PDF

    SIGC121T120R2C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FS75R12KS4

    Abstract: SIGC121T120R2CS infineon igbt die 1200V
    Text: SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V


    Original
    PDF SIGC121T120R2CS SIGC121T120R2CS Q67050A4074-A003 7171-T, FS75R12KS4 infineon igbt die 1200V

    75GD120DN2

    Abstract: SIGC121T120R2C
    Text: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V


    Original
    PDF SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041sawn A4682-A003 7171-M, 75GD120DN2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V


    Original
    PDF SIGC121T120R2CS SIGC121T120R2CS Q67050A4074-A003 7171-T,

    Untitled

    Abstract: No abstract text available
    Text: SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module


    Original
    PDF SIGC121T120R2CL BSM75GD120DLC SIGC121T120R2CL Q67041A4686-A003 7171-P,

    Untitled

    Abstract: No abstract text available
    Text: SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V


    Original
    PDF SIGC121T120R2CS Q67050A4074-A003 SIGC121T120R2CS 7171-T,

    Untitled

    Abstract: No abstract text available
    Text: SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module


    Original
    PDF SIGC121T120R2CL BSM75GD120DLC SIGC121T120R2CL Q67041A4686-A003 7171-P,

    Untitled

    Abstract: No abstract text available
    Text: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V


    Original
    PDF SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041A4682-A003 7171-M,

    75GD120DN2

    Abstract: SIGC121T120R2C
    Text: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V


    Original
    PDF SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041A4682-A003 7171-M, 75GD120DN2

    BSM75GD120DLC

    Abstract: SIGC121T120R2CL
    Text: Preliminary SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module


    Original
    PDF SIGC121T120R2CL BSM75GD120DLC SIGC121T120R2CL Q67041A4686-A003 7171-P, BSM75GD120DLC

    75GD120DN2

    Abstract: SIGC121T120R2C
    Text: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V


    Original
    PDF SIGC121T120R2C SIGC121T120R2C 75GD120DN2 Q67041A4682-A003 7171-M, 75GD120DN2

    75GD120DN2

    Abstract: BSM75GD120DN2
    Text: SIGC121T120R2C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling  integrated gate resistor Chip Type VCE SIGC121T120R2C 1200V This chip is used for:


    Original
    PDF SIGC121T120R2C 75GD120DN2 SIGC121T120R2C L7171MM, BSM75GD120DN2

    BSM75GD120DLC

    Abstract: SIGC121T120R2CL
    Text: Preliminary SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE This chip is used for: • power module


    Original
    PDF SIGC121T120R2CL BSM75GD120DLC SIGC121T120R2CL Q67041sawn A4686-A003 7171-P, BSM75GD120DLC

    SIGC121T120R2CS

    Abstract: infineon igbt die 1200V
    Text: Preliminary SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V


    Original
    PDF SIGC121T120R2CS SIGC121T120R2CS Q67050sawn A4074-A003 7171-T, infineon igbt die 1200V

    infineon igbt die 1200V

    Abstract: SIGC121T120R2CS
    Text: Preliminary SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2CS 1200V


    Original
    PDF SIGC121T120R2CS SIGC121T120R2CS Q67050A4074-A003 7171-T, infineon igbt die 1200V