NEC Relay MR31
Abstract: OMRON G4s NEC MR31 RELAY NEC Relay MR31 24 nec NEC MR31 omron relay G5L RELAY OMRON G4s MR72 NEC MR72 Relay MR31H
Text: Breakdown Voltage Size mm LD 20.3 x 7 x 15 PCB LA 24 x 12 x 25 PCB LK 24 x 11 x 25 PCB LK-S 24 x 11 x 25 PCB LK-P 24 x 11 x 25 PCB JQ JW 20 x 10 x 16 28.6x12.8x20.4 Load Current (100k ops) Creepage Distance 1A 3Amps 5Amps 6mm 6mm 750 Vrms 4,000 Vrms 2A 3Amps
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T9A/T90
JQX-115F
T70/T7N/T7C
MR31H,
MR331H
MR301
/MR301H
NEC Relay MR31
OMRON G4s
NEC MR31 RELAY
NEC Relay MR31 24 nec
NEC MR31
omron relay G5L
RELAY OMRON G4s
MR72
NEC MR72 Relay
MR31H
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Untitled
Abstract: No abstract text available
Text: g y, , ILH200 Hermetic Phototransistor Dual Channel Optocoupler FEATURES • Operating Temperature Range, –55°C to +125°C • Current Transfer Ratio Guaranteed from –55°C to +100°C Ambient Temperature Range • High Current Transfer Ratio at Low Input Current
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ILH200
ILH200
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V23818
Abstract: xv 1300
Text: V23818-C8-V15 SIEMENS Small Form Factor M ultim ode 1300 nm Ethernet/Fast Ethernet/FDDI/ATM 2x5 Transceiver with VF-45 Connector Preliminary FEATURES • C om pliant w ith all m ajor standards APPLICATIONS • Sm all Form Factor transceiver • RJ-45 style VF-45™ connector system
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V23818-C8-V15
VF-45TM
RJ-45
UL-94
V23818
xv 1300
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Q62702-A118
Abstract: No abstract text available
Text: SIEMENS BAT 60A Silicon Schottky Diode • Rectifier Schottky diode with extreme low VF drop for mobile communication • For power supply • For clamping and proptection in low voltage application • For detection and step-up-conversion ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-A1188
OD-323
100ns)
90ess
Q62702-A118
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SM 850nm laser
Abstract: No abstract text available
Text: V23818-K305-V10 SIEMENS Small Form Factor Multim ode 850 nm 1.3 Gigabit Ethernet 2x5 Transceiver with VF-45 Volition Connector Preliminary D im ension s in (m m) inches (13.59) Max. 535 (13.97) Min .550 Pitch (1.78) .070 (16) .630 ( 12 ) .472 2,0(1O7S>
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V23818-K305-V10
VF-45
850nm
R5/6/13
R9/10
R11/12
D-13623,
iconductor/products/37/376
SM 850nm laser
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 76 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 76 Vf S 400 V k> 3A ^4)S on) 1.8 Si Package Ordering Code TO-220 AB C67078-S1315-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 37 °C
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O-220
C67078-S1315-A2
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Untitled
Abstract: No abstract text available
Text: SIEMENS Plastic Fiber O ptic Transm itter Diode Plastic C onnector Housing SFH 752 SFH 752V Not fo r new design Features • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling
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A23SbD5
fl235bDS
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Untitled
Abstract: No abstract text available
Text: SIEMENS P la s tic F ib e r O p tic T ra n s m itte r D iode P la s tic C o n n e c to r H o u s in g SFH 752 SFH 752V N o t fo r n ew d e s ig n Features • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required
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Q62702-P210
Q62702-P284
SFH752
SFH752V
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Q62702-P1715
Abstract: SFH 756V
Text: SIEMENS Plastic Fiber Optic Transm itter Diode Plastic C onnector Housing SFH 756 SFH 756V Prelim inary Data Features • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling
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Q62702-P1716
Q62702-P1715
Q62702-P1715
SFH 756V
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siemens SFH nm
Abstract: sfh418 SFH414
Text: SIEMENS C M P N T S t OPTO 44E D ASBbBEb OODSMfib 5 SIEMENS ISIEX S FH 414 S FH 415 S FH 416 GaAs Infrared Emitter ' - H l - II Package Dimensions in Inches mrh SFH 414/415 CWp Petition ,016(0.4) ( .1*9(4*) .165 (4¿) _ l ra i (M ) .016(0.4)-} .100 <2*54>
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SFH416:
SFH414/415/416
siemens SFH nm
sfh418
SFH414
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siemens igbt BSM 150 gb 100 d
Abstract: siemens igbt BSM 100 gb siemens igbt BSM 25 Gb 100 d BSM 15 GB GB120DN2 100-GB
Text: SIEMENS BSM 100 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2 VCE h 1200V 150A Package Ordering Code HALF-BRIDGE 2 C67076-A2107-A70 Maximum Ratings Parameter
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C67076-A2107-A70
siemens igbt BSM 150 gb 100 d
siemens igbt BSM 100 gb
siemens igbt BSM 25 Gb 100 d
BSM 15 GB
GB120DN2
100-GB
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siemens igbt
Abstract: bsm 750
Text: SIEMENS BSM 100 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • ^G on.min = 15 Ohm BSM 100 GB 170 DN2 LU Type h 1700V 145A Package Ordering Code HALF-BRIDGE 2
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SFH 450V
Abstract: diode pj 77 siemens SFH nm Q62702-P265
Text: SIEMENS Plastic Fiber Optic Transmitter Diode Plastic Connector Housing SFH 450 SFH 450V Features • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling Plastic Connector Housing
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Q62702-P1034
Q62702-P265
SFH 450V
diode pj 77
siemens SFH nm
Q62702-P265
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NS160H
Abstract: No abstract text available
Text: SIEMENS BSM 100G D120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 100 GD 120 DN2 h VCE 1200V 150A Package Ordering Code
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GU10H76
NS160H
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EM 4093
Abstract: No abstract text available
Text: bOE D ÔS35büS ÜQ4titi07 3 m ISIEG T^/-// SFH 409 SIEMENS INFRARED EMITTER SIEMENS AKTIENÛESELLSCHAF Package Dimensions in Inches mm Surface not flat - 204 (5 2) 177 (4 5) 024 (.6) .0 1 6 ( 4 ) 100 (2 54) .0 2 8 (7 ) 0 1 6 (4 ) f L a 1 2 2 (3 1) h w 114 (2 9 )
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Q4titi07
EM 4093
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sfh450
Abstract: No abstract text available
Text: SIEMENS Plastic Fiber O ptic T ransm itte r Diode Plastic C onnector Housing SFH 450 SFH 450V Features • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling
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62702-P
Q62702-P265
OH000364
OHROQ535
Gpx06525
sfh450
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BSM25GD100D
Abstract: C67076-A2501-A2 KS2500 BSM25GD-100 BSM25GD100
Text: bOE J> • 0 E 3 S b G S D Q 4 S Ô 2 4 31 3 « S I E G SIEMENS SI EM EN S A K T I E N 6 E S E L L S C H A F ~ T - 'Z 3 - IGBT Module BSM25GD100D Preliminary Data VCE = 1000 V I c = 6 x 3 5 A at r c = 25 C I c = 6 x 2 5 A at r c = 80 C • • • • •
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C67076-A2501-A2
BSM25GD100D
C67076-A2501-A2
KS2500
BSM25GD-100
BSM25GD100
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BYP102
Abstract: No abstract text available
Text: SIEMENS BYP102 FRED Diode * Fast recovery epitaxial diode • Soft recovery characteristics Type BYP 102 Vrrm 1000V *FRMS 50A 'rr 130ns Package Ordering Code TO-218 AD C67047-A2071-A2 Maximum Ratings Parameter Symbol Mean forward current ^FAV Tc = 90 °C, D = 0.5
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BYP102
130ns
O-218
C67047-A2071-A2
GPT05
BYP102
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TR40-10
Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
Text: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance
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23b32G
BSS123
Q62702-SS12
OQ171bO
TR40-10
SA SOT-23
MARKING CODE 028a sot 23
Q62702-SS12
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siemens SFH nm
Abstract: SFH750V
Text: SIEMENS Plastic Fiber Optic Transm itter Diode Plastic C onnector Housing SFH 750 SFH 750V Features • • • • 2.2 mm aperture holds standard 1000 micron plastic fiber No fiber stripping required Good linearity Molded microlens for efficient coupling
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Q62702-P1031
Q62702-P266
siemens SFH nm
SFH750V
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siemens igbt BSM 75 gb 100
Abstract: siemens igbt BSM 150 Gb 160 d AL100-D Q102 C67076-A2104-A2 siemens igbt BSM 150 gb 100 d BSM 75 GB 120 D siemens igbt BSM 100 gb BSM 225 IGBT Power Module sieg
Text: LOE D • ä235bDS 0045flSb ^03 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ? BSM 75 GB 100 D BSM 75 GAL 100 D IGBT Module Preliminary Data V CE = 1000 V / c = 2 x 100 A at r c = 25 "C / c = 2 x 75 A at T c = 80 C • • • • • Power m odule Half-bridge/Chopper
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235bDS
0045flSb
2x100
C67076-A2104-A2
C67076-A2003-A2
fl23SbDS
siemens igbt BSM 75 gb 100
siemens igbt BSM 150 Gb 160 d
AL100-D
Q102
C67076-A2104-A2
siemens igbt BSM 150 gb 100 d
BSM 75 GB 120 D
siemens igbt BSM 100 gb
BSM 225
IGBT Power Module sieg
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BSM200GA100D
Abstract: bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 GA100D stt25
Text: bOE D fl23SbD5 OOMS^OM 4Tb • S I E G ■ SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V J c = 2 7 5 A at r c = 25 C / c = 200 A at T c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes
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fl23SbD5
BSM200GA100D
GA100D
C67076-A2001-A2
SII00253
SII00254
BSM200GA100D
bsm200ga100
siemens igbt BSM 200 GA 120
siemens igbt BSM 300 ga 120
siemens igbt BSM 200 GA 100
stt25
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SIEMENS 4N35
Abstract: MCT2E pin configuration h11a5-characteristics mct274 vth 7090
Text: PHOTOTRANSISTOR SIEMENS DEVICE TYPES CTR, % Min. Part No. 4N25 20 4N26 20 4N27 10 4N28 10 4N35 100 4N36 100 4N37 100 4N38 10 H11A1 50 20 H11A2 20 H11A3 10 H11A4 30 H11A5 Industry Standard Single Channel 6 Pin DIP Optocoupier Part No. MCT2 MCT2E MCT270 MCT271
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MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
H11A1
H11A2
SIEMENS 4N35
MCT2E pin configuration
h11a5-characteristics
vth 7090
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Untitled
Abstract: No abstract text available
Text: 0235bOS OOMbb1^ bOE D 324 « S I E Q SFH 205 SFH 205Q2 SFH 206 SIEMENS SIEMENS AKTIENGESELLSCHAF SILICON PHOTODIODE DAYLIGHT FILTER P a c k a g e D im e n sio n s in In ch e s m m 1 336 (34) Cathode 200 (5 1) 185 (4 7) 161 T * 41) r H (3 7) 145 100 t 336 (34)
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0235bOS
205Q2
523SbDS
D4b700
205/SFH
20SQ2/SI-H
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