6N136
Abstract: SFH6136 SFH636
Text: SFH636 High Speed 5.3 kV Optocoupler Preliminary Data Sheet Dimensions in Inches mm FEATURES • High Speed Optocoupler without Base Connection • GaAlAs Emitter • Integrated Detector with Photodiode and Transistor • High Data Transmission Rate: 1.0 MBit/s
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SFH636
E52744
SFH636
SFH6136:
6N136
SFH6136
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loctite 3621
Abstract: ekra e5 ekra Wiring Diagram Siemens Logo Loctite 640 TSL1401CS siemens jupiter 4127Y siemens Logo with analog input output analog input Wiring Diagram Siemens Logo
Text: TSL1401CS 128 x 1 LINEAR SENSOR ARRAY WITH HOLD r r D D D D D D D D D D TAOS036A - AUGUST 2003 128 × 1 Sensor-Element Organization 400 Dots-Per-Inch DPI Sensor Pitch High Linearity and Uniformity Wide Dynamic Range . . . 4000:1 (72 dB) Output Referenced to Ground
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TSL1401CS
TAOS036A
TSL1401CS
loctite 3621
ekra e5
ekra
Wiring Diagram Siemens Logo
Loctite 640
siemens jupiter
4127Y
siemens Logo with analog input output
analog input Wiring Diagram Siemens Logo
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Untitled
Abstract: No abstract text available
Text: TSL1401CS 128 x 1 LINEAR SENSOR ARRAY WITH HOLD r r D D D D D D D D D D D TAOS036B − FEBRUARY 2005 128 × 1 Sensor-Element Organization 400 Dots-Per-Inch DPI Sensor Pitch High Linearity and Uniformity Wide Dynamic Range . . . 4000:1 (72 dB) Output Referenced to Ground
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TSL1401CS
TAOS036B
TSL1401CS
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sfh siemens
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 2801 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Si-PIN Fotodiode
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Photodiode in TO-Package • • • • • • • • • • • SRD 00111Z Si-PIN-photodiode Designed for application in fiber-optic Transmission systems Sensitive receiver for the 1st window 850 nm Suitable for bit rates up to 565 Mbit/s
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00111Z
Q62702-P3019
SRD00111Z
6535bD5
D07375S
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Untitled
Abstract: No abstract text available
Text: SIEMENS BPW 34B SILICON PIN PHOTODIODE ENHANCED BLUE SENSITIVITY FEATURES * Large Active Area Photodiode * Silicon Planar PIN Photodiode * N-Si Material: Anode=Front Contact, Cathode=Back Contact Maximum Ratings * High Reliability O perating and Storage T em perature R ange TOP, T= tq .- 4 0 " to +80"C
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2100-B
Abstract: No abstract text available
Text: SIEMENS KOM 2033 B DAYLIGHT FILTER KOM 2033 BF KOM 2100 B DAYLIGHT FILTER KOM 2100 BF 6-CHIP SILICON PIN PHOTODIODE ARRAY 8-44 FEATURES Characteristics, Single Segment TA= 2 5 °C , X =950 nm * Silicon Photodiode in Planar Technology Parameter * N-Si Material
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6X10-14
X1012
K0M2033B/2100B/2033BF/21006F
2033B/21006
KOM2033B/2100B/2033BF/2100BF
2100-B
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Untitled
Abstract: No abstract text available
Text: SIEMENS BP 104 SILICON PIN PHOTODIODE DAYLIGHT FILTER FEATURES Maximum Ratings • • • • O perating and Storage T em perature R ange T0P, To tg .- 4 0 ” to + 8 0 ” C • N-SI Material: Anode=Front Contact, Cathode=Back Contact
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon-PIN-Photodiode with Daylight Filter Area not fla t SFH 205 SFH 206 Radiant sensitive area Cathode i L •«-; r-s _ t o -si 1 _ A- 3.7 GE0Û665 A p pro x. w e ig h t 0 .25 g Area not fla t 0 .6 x 0 .5
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00575flfl
fl235bOS
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight Filter SFH 235 FA 1 ." Cathode P ho to se n si tiv e area S urface ro t Approx. w e ig h t f la t 0.2 5 g M aße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.
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Q62702-P3060
Abstract: Siemens Si PIN photodiode Q62702-P3059 SRD00214C SRD00214H SRD00215C SRD00215H
Text: SIEMENS Ternary PIN Photodiode with Pigtail SRD 00214X SRD00215X • InGaAs/lnP - PIN-photodiode • Designed for telecommunications applications • Sensitive receiver for the 2nd and 3rd optical window 1300 nm and 1500 nm • Suitable for bit rates up to 1.2 Gbit/s
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SRD00214H
Q62702-Pxxxx
SRD00215H
062702-Pxxxx
SRD00214C
Q62702-P3059
SRD00215C
Q62702-P3060
fl23Sb05
00737S5
Siemens Si PIN photodiode
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2.5 Gbit/s Transimpedance Amplifier F0A1251A1 FOA1252A1 Preliminary Data Bipolar IC Features • Data rate up to 2.5 Gbit/s • Full ITU-T G958 specification compliance • Input sensitivity-23.5 dBm at BER = 10-9 • High overload: 2 mApp maximum input current
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F0A1251A1
FOA1252A1
sensitivity-23
IAIC116x
B192-H663-7400)
FOA1251A1
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Untitled
Abstract: No abstract text available
Text: SIEMENS BPX 61 Silizium-PIN-Fotodiode Silicon PIN Photodiode I "* Chip position Cothode 00.45 tr> o R a d ia n t sen sitive a re a / N- o cñ <r> oo 00 3 .0 1 4 .5 1 2 .5 Ifmo06011 0 .3 m a x A p p ro x. weight 2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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TIC 206 D
Abstract: D8020
Text: SIEMENS Silizium-PIN-Fotodiode Silicon PIN Photodiode Area not fla t 0.8 6.9 6.3 0.6x0.5 ^0.4x0.3 Radiant sensitive area 1.8 Cathode ].2 TJT-zf i ¡.E L+J 4,0 SFH 206 K T Cx| M o o - r- i ^ '!+ ^1 W 4.1. 3.7 34 32' GE006647 Approx. weight 0.25 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GE006647
TIC 206 D
D8020
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Untitled
Abstract: No abstract text available
Text: SIEMENS V23826-H18-C13/C313 AC/AC TTL 5V/3.3V V23826-H18-C53/C353 DC/DC (5V/3.3V) V23826-H18-C63/C363 AC/AC PECL (5V/3.3V) V23826-H18-C73/C373 AC/DC (5V/3.3V) Single Mode 1300 nm 622 MBd ATM 1x9 Transceiver Preliminary • • • • Wave solderable and washable with process plug inserted
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V23826-H18-C13/C313
V23826-H18-C53/C353
V23826-H18-C63/C363
V23826-H18-C73/C373
D-13623,
iconductor/products/37/376
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Untitled
Abstract: No abstract text available
Text: SIEMENS B P X 65 Silicon Photodiode Dimensions in inches mm .216(5.5) 197 (5.0) .570(14.5) .492(12.5) .200 (5.3) .197(5.0) H 0.100 (2.54) 0.018(0.45) 0 .1 8 9 (4.8) 0 .181 ( 4 .6 ) ' .106 (2.7) Radiant sensitive area Chip Location 218(5.6). .208 (5.3) GET06013
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GET06013
18-pln
fl535t
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6pin vhz
Abstract: smd 6PIN "vhz"
Text: SIEMENS BPY12 Silicon PIN Photodiode FEATURES • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 25 ns Dimensions in inches (mm) .204(5.2)1 .197 (5.0)1 t .204(5.2) .197(5.0) APPLICATIONS • Industrial electronics
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18-pln
fl535t
6pin vhz
smd 6PIN "vhz"
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smd 6PIN "vhz"
Abstract: SIEMENS Germanium
Text: SFH 231 SIEMENS Germanium PIN Photodiode D im ensions in in ch e s mm .291 (7.4) .259 (6.6) .571 (14.51 .492(12.5) ,208 (5.3), 197 (5.0) 0.100 Cathode 0.189(4.8) 0.181 (4.6) (2.54) J A .018(0.45) l .106 (2.7) • ' Glass Lens Chip Location FEATURES • Especially suitable for applications from 600
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GE006314
18-pln
fl535t
smd 6PIN "vhz"
SIEMENS Germanium
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SFH505
Abstract: SFH505A circuit diagram of Garage Door Openers EE-250 SFH415 ir emitter SFH415 applications lq100 switching electronic circuit diagram
Text: bOE D _ • {JE35b05 DDMb73T Ö30 « S I E G SIEMENS AKTIENGESEL LSCH AF _ S ltM b N b SFH505A IR Receiver/Demodulator Device ~ r - ^ r - 9 ü Package Dimensions in Inches mm FEATURES • Photodiode with Hybrid Integrated Circuit * 30 kHz Carrier Frequencey
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DDMb73T
SFH505A
SFH505A
SFH505
circuit diagram of Garage Door Openers
EE-250
SFH415
ir emitter
SFH415 applications
lq100
switching electronic circuit diagram
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Siemens Si PIN photodiode
Abstract: No abstract text available
Text: SIEMENS 1.25 G bit/s T ran sim pedance A m plifier F0A1121A1 FOA1122A1 Preliminary Data Bipolar IC Features • Data rate up to 1.25 Gbit/s • Input sensitivity -27.0 dBm at BER = 10"9 • High overload: 2 mApp maximum input current • Single supply voltage: + 4.5 V to + 5.5 V
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F0A1121A1
FOA1122A1
OC-24,
FOA1122A1
FOA1122
P-TSSOP-16-1
B192-H663-7400)
Siemens Si PIN photodiode
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APY12
Abstract: APY 12 Siemens photodiode visible light Germanium power K/HOP-1045
Text: SFH 231 SIEMENS GERMANIUM PIN PHOTODIODE Package Dimensions in Inches mm FEATURES Maximum Ratings * Anode Marking: Projection at Package Bottom • Usage: Visible Light and Near Infrared Range * High Spectral Sensitivity ■ High Reliability * Very Short Switching Time
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1300nm,
100nA)
APY12
APY 12
Siemens photodiode visible light
Germanium power
K/HOP-1045
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Untitled
Abstract: No abstract text available
Text: SBH 51414X BIDI Transceiver Optical Module 1300 nm Em itting-/1550 nm Receiving Function, High Power • • • • • • Designed for application in passive-optical networks Integrated Wavelength Division Multiplexer Bidirectional Transmission in 2nd and 3rd optical window
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itting-/1550
1414A
51414G
062702-Pxxxx
51414X
GM006907
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D846
Abstract: Siemens Si PIN photodiode Siemens photodiode BPW34 D790 F4153 BPW34 circuit
Text: SI E M E N S C M P N TS i OP TO H4E » • 623b32b QQQSS1Ô 3 SIEtVlE^IS ^ ^ BPW34-1028 SILICON PIN PHOTODIODE SMT LEADS ON PLASTIC CARRIER Package Dimensions in Inches mm .234 (5.95) -.211 (5.35) ■ ■020(05^ .177(4.5) - .1 6 9 (4 ,3 ) - r .r i L_r .028
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623b32b
BPW34-1028
D846
Siemens Si PIN photodiode
Siemens photodiode BPW34
D790
F4153
BPW34 circuit
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH636 HIGH SPEED 5.3 kV OPTOCOUPLER Preliminary Data Sheet FEATURES • Package Dimensions in Inches mm High Speed Optocoupler without Base Connection Pin One ID. i3i f2i rîi Integrated Detector with Photodiode and Transistor High Data Transmission Rate: 1 MBit/s
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SFH636
E52744
SFH636
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