Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
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Untitled
Abstract: No abstract text available
Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode
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APTMC60TLM14CAG
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Untitled
Abstract: No abstract text available
Text: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT26M100JCU3
OT-227)
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diode schottky 1000V 10a
Abstract: SiC MOS APT0502
Text: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330mΩ typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT26M100JCU3
OT-227)
diode schottky 1000V 10a
SiC MOS
APT0502
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Untitled
Abstract: No abstract text available
Text: APT26M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 330m typ @ Tj = 25°C ID = 26A @ Tc = 25°C Application • AC and DC motor control Switched Mode Power Supplies D Features G S SiC Schottky Diode
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APT26M100JCU3
OT-227)
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Untitled
Abstract: No abstract text available
Text: APT22M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT22M100JCU3
OT-227)
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mosfet 10a 800v
Abstract: SOT-227 heatsink sic-diode 1000v APT0502 diode schottky 1000V 10a
Text: APT22M100JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode
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APT22M100JCU3
OT-227)
mosfet 10a 800v
SOT-227 heatsink
sic-diode 1000v
APT0502
diode schottky 1000V 10a
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APT50MC120JCU2
Abstract: No abstract text available
Text: APT50MC120JCU2 ISOTOP Boost chopper SiC MOSFET + SiC chopper diode Power module K D VDSS = 1200V RDSon = 34mΩ max @ Tj = 25°C ID = 71A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT50MC120JCU2
OT-227)
APT50MC120JCU2
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Untitled
Abstract: No abstract text available
Text: APT100MC120JCU2 VDSS = 1200V RDSon = 17mΩ max @ Tj = 25°C ID = 143A @ Tc = 25°C ISOTOP Boost chopper SiC MOSFET + SiC chopper diode Power module K D Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT100MC120JCU2
OT-227)
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ultrafast igbt
Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching
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of169
1200-volt
CPWR-AN03,
ultrafast igbt
IGBT 50 amp 1000 volt
calculation of IGBT snubber
CPWR-AN03
Cree SiC MOSFET
12 VOLT 10 AMP smps
24 volt 10 amp smps
power diode
AN-11A
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IGBT 50 amp 1000 volt
Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode
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IDC2000
Abstract: CIE1931
Text: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features
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APH1608RWF/A
2000PCS
4600k
DSAG3635
JUN/29/2007
IDC2000
CIE1931
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Untitled
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTR3216RWF/A PRELIMINARY SPEC WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features
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APTR3216RWF/A
2000PCS
6500K
CIE1931
DSAG6300
JUL/06/2006
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CIE1931
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features
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APH1608RWF/A
2000pcs
DSAG3635
AUG/16/2008
CIE1931
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1203-005570
Abstract: CIE1931
Text: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features
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APHH1005RWF/A
2000PCS
4600k
DSAG6504
JUN/04/2007
1203-005570
CIE1931
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CIE1931
Abstract: No abstract text available
Text: 1.0x0.5mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APHH1005RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features
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APHH1005RWF/A
2000pcs
DSAG6504
AUG/15/2008
CIE1931
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CIE1931
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APH1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description The source color devices are made with InGaN on SiC Light Emitting Diode.
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APH1608RWF/A
2000PCS
MAY/23/2006
DSAG3635
CIE1931
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CIE1931
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APT1608RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode. Features
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APT1608RWF/A
2000pcs
DSAG3636
AUG/16/2008
CIE1931
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CIE1931
Abstract: No abstract text available
Text: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.
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APA1606RWF/A
2000PCS
4600k
DSAG3638
MAY/17/2007
CIE1931
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CIE1931
Abstract: No abstract text available
Text: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.
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APA1606RWF/A
2000pcs
DSAG3638
AUG/15/2008
CIE1931
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LM 385 N
Abstract: CIE1931
Text: 4.0X0.8mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APJKA4008RWC/A ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.
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APJKA4008RWC/A
2000PCS
5600k
4600k
DSAG3649
JUN/29/2007
LM 385 N
CIE1931
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Untitled
Abstract: No abstract text available
Text: 4.0x4.0mm RIGHT ANGLE SURFACE MOUNT LED LAMP PRELIMINARY SPEC Part Number: AA4040RWC/J ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.
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AA4040RWC/J
500PCS
6500K
CIE1931
EFFG2565
MAY/23/2006
DSAG2565
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Untitled
Abstract: No abstract text available
Text: 1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APA1606RWF/A WHITE ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN on SiC Light Emitting Diode.
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APA1606RWF/A
2000PCS
6500K
CIE1931NO:
DSAG3638
MAY/23/2006
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CIE1931
Abstract: No abstract text available
Text: 4.0X0.8mm RIGHT ANGLE SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APJKA4008RWC/A ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES WHITE Description The source color devices are made with InGaN on SiC Light Emitting Diode.
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APJKA4008RWC/A
2000PCS
DSAG3649
MAY/23/2006
CIE1931
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