SIC MOS Search Results

SIC MOS Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
MG800FXF1ZMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD
MG250YD2YMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A
TW030Z120C	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X)
TW045Z120C	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 40 A, 0.062 Ω@18V, TO-247-4L(X)

SIC MOS Price and Stock

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Infineon Technologies AG SICMOSFET SILICON CARBIDE MOSFET KIT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SICMOSFET		9		1	1 $123.88 10 $123.88 100 $123.88 1000 $123.88 10000 $123.88	Buy Now

SIC MOS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SiC POWER MOSFET Abstract: sic MOSFET APTMC60TLM14CAG Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode	Original	PDF	APTMC60TLM14CAG SiC POWER MOSFET sic MOSFET APTMC60TLM14CAG
Untitled Abstract: No abstract text available Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode	Original	PDF	APTMC60TLM14CAG
Untitled Abstract: No abstract text available Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode	Original	PDF	APTMC60TLM14CAG
CSD06060A Abstract: cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio Text: SiC Power Diode Reliability SiC Schottky Diode Reliability September 2006 March 2006 SiC Power Diode Reliability September 2006 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers three years ago	Original	PDF	CPWR-RS03, CSD06060A cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio
Untitled Abstract: No abstract text available Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	PDF	APTMC60TL11CT3AG
cree Sic Abstract: schottky diode FIT 155C CSD04060 CSD06060 CSD10060 Text: SiC Power Diode Reliability SiC Schottky Diode Reliability October 2008 September 2007 SiC Power Diode Reliability October 2008 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers four years ago	Original	PDF	CPWR-RS03, cree Sic schottky diode FIT 155C CSD04060 CSD06060 CSD10060
Untitled Abstract: No abstract text available Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	PDF	APTMC60TLM55CT3AG
Untitled Abstract: No abstract text available Text: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	PDF	APTMC60TL11CT3AG
800V 40A mosfet Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	PDF	APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Untitled Abstract: No abstract text available Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	PDF	APTMC60TLM20CT3AG
Untitled Abstract: No abstract text available Text: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •	Original	PDF	APTMC60TLM20CT3AG
Untitled Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH03G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDH03G65C5
Untitled Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH02G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDH02G65C5
Untitled Abstract: No abstract text available Text: Power Modules New Line of SiC-Based Power Modules for Universal Use in Solar and Battery Management Applications Second generation of SiC modules debuts flow 0 SiC Vincotech has rolled out new SiC-based products for ultra efficient, high-frequency operation in solar inverter and battery management	Original	PDF	frequencie-PZ123BA080ME-M909L18Y Jan-14 12-mm com/M90

Untitled Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH02G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDH02G65C5
Untitled Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH03G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDH03G65C5
0116 solar Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH04G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH04G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDH04G65C5 0116 solar
Untitled Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDH08G65C5
Untitled Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK12G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDK12G65C5
D1665C5 Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDH16G65C5 D1665C5
D0865C5 Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDH08G65C5 650es D0865C5
Untitled Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK10G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK10G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDK10G65C5
Untitled Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH06G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH06G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDH06G65C5
Untitled Abstract: No abstract text available Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH04G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH04G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC	Original	PDF	IDH04G65C5

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SIC MOS Search Results

SIC MOS Result Highlights (5)

SIC MOS Price and Stock

Infineon Technologies AG SICMOSFET

SIC MOS Datasheets Context Search

SiC POWER MOSFET

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CSD06060A

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cree Sic

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800V 40A mosfet

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0116 solar

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D1665C5

D0865C5

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