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    SIA519 Price and Stock

    Vishay Siliconix SIA519EDJ-T1-GE3

    MOSFET N/P-CH 20V 4.5A PPAK8X8
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    DigiKey SIA519EDJ-T1-GE3 Cut Tape 293,604 1
    • 1 $0.88
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    SIA519EDJ-T1-GE3 Digi-Reel 293,604 1
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    SIA519EDJ-T1-GE3 Reel 291,000 3,000
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    RS SIA519EDJ-T1-GE3 Bulk 3,000
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    New Advantage Corporation SIA519EDJ-T1-GE3 42,000 1
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    Vishay Intertechnologies SIA519EDJ-T1-GE3

    Trans MOSFET N/P-CH 20V 4.5A/3.7A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 69W7157)
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    Avnet Americas SIA519EDJ-T1-GE3 Ammo Pack 7 Weeks, 4 Days 1
    • 1 $0.614
    • 10 $0.518
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    SIA519EDJ-T1-GE3 Reel 8 Weeks 3,000
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    Mouser Electronics SIA519EDJ-T1-GE3 72,942
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    Verical SIA519EDJ-T1-GE3 6,000 3,000
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    SIA519EDJ-T1-GE3 3,000 3,000
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    Arrow Electronics SIA519EDJ-T1-GE3 6,000 8 Weeks 3,000
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    SIA519EDJ-T1-GE3 3,000 8 Weeks 3,000
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    Newark SIA519EDJ-T1-GE3 Cut Tape 5,498 1
    • 1 $0.159
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    SIA519EDJ-T1-GE3 Reel 1
    • 1 $0.238
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    Bristol Electronics SIA519EDJ-T1-GE3 32
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    TTI SIA519EDJ-T1-GE3 Reel 72,000 3,000
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    TME SIA519EDJ-T1-GE3 3,000
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    Chip 1 Exchange SIA519EDJ-T1-GE3 7,845
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    Avnet Asia SIA519EDJ-T1-GE3 10 Weeks 3,000
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    EBV Elektronik SIA519EDJ-T1-GE3 9 Weeks 3,000
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    Vishay Huntington SIA519EDJ-T1-GE3

    MOSFET N/P-CH 20V 4.5A SC70-6
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    Win Source Electronics SIA519EDJ-T1-GE3 108,730
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    SIA519 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA519EDJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4.5A SC70-6 Original PDF

    SIA519 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    65176

    Abstract: SiA519EDJ SC-70-6 SiA519EDJ-T1-GE3
    Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original
    PDF SiA519EDJ 2002/95/EC SC-70-6 18-Jul-08 65176 SiA519EDJ-T1-GE3

    SiA519EDJ

    Abstract: 16503 AN609
    Text: SiA519EDJ Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF SiA519EDJ AN609, 30-Jul-09 16503 AN609

    65176

    Abstract: No abstract text available
    Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original
    PDF SiA519EDJ 2002/95/EC SC-70-6 11-Mar-11 65176

    SiA519EDJ

    Abstract: No abstract text available
    Text: SPICE Device Model SiA519EDJ Vishay Siliconix N-Channel and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized


    Original
    PDF SiA519EDJ 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original
    PDF SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original
    PDF SiA519EDJ 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original
    PDF SiA519EDJ SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    65176

    Abstract: S0926 SIA519
    Text: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original
    PDF SiA519EDJ 2002/95/EC SC-70-6 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 65176 S0926 SIA519

    Untitled

    Abstract: No abstract text available
    Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original
    PDF SiA519EDJ SC-70-6 SiA533EDJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original
    PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original
    PDF SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original
    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477