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    Vishay Siliconix SIA413DJ-T1-GE3

    MOSFET P-CH 12V 12A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA413DJ-T1-GE3 Cut Tape 166,237 1
    • 1 $1.45
    • 10 $0.917
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    • 1000 $0.43444
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    SIA413DJ-T1-GE3 Digi-Reel 166,237 1
    • 1 $1.45
    • 10 $0.917
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    • 1000 $0.43444
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    SIA413DJ-T1-GE3 Reel 159,000 3,000
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    Quest Components SIA413DJ-T1-GE3 100
    • 1 $2.688
    • 10 $2.688
    • 100 $1.4784
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    Vishay Siliconix SIA413ADJ-T1-GE3

    MOSFET P-CH 12V 12A PPAK SC70-6
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    DigiKey SIA413ADJ-T1-GE3 Cut Tape 2,900 1
    • 1 $1.44
    • 10 $0.907
    • 100 $1.44
    • 1000 $0.42911
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    SIA413ADJ-T1-GE3 Digi-Reel 2,900 1
    • 1 $1.44
    • 10 $0.907
    • 100 $1.44
    • 1000 $0.42911
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    SIA413ADJ-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SIA413DJ-T1-GE3

    Trans MOSFET P-CH 12V 10A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA413DJ-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA413DJ-T1-GE3 Reel 48,000 17 Weeks 3,000
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    Mouser Electronics SIA413DJ-T1-GE3 26,290
    • 1 $1.12
    • 10 $0.756
    • 100 $0.527
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    • 10000 $0.337
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    Verical SIA413DJ-T1-GE3 168 50
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    Arrow Electronics SIA413DJ-T1-GE3 Cut Strips 168 17 Weeks 1
    • 1 $0.0254
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    • 100 $0.0241
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    Newark SIA413DJ-T1-GE3 Reel 3,000
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    SIA413DJ-T1-GE3 Cut Tape 3,000
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    • 100 $0.403
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    Bristol Electronics SIA413DJ-T1-GE3 119
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    Quest Components SIA413DJ-T1-GE3 5,928
    • 1 $2.688
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    • 100 $2.688
    • 1000 $1.008
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    TTI SIA413DJ-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.338
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    TME SIA413DJ-T1-GE3 1
    • 1 $0.786
    • 10 $0.707
    • 100 $0.561
    • 1000 $0.523
    • 10000 $0.505
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    EBV Elektronik SIA413DJ-T1-GE3 9 Weeks 3,000
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    Vishay Intertechnologies SIA413ADJ-T1-GE3

    Trans MOSFET P-CH 12V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA413ADJ-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA413ADJ-T1-GE3 Reel 21 Weeks 3,000
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    • 10000 $0.32718
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    Mouser Electronics SIA413ADJ-T1-GE3
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    TTI SIA413ADJ-T1-GE3 Reel 3,000
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    • 10000 $0.333
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    TME SIA413ADJ-T1-GE3 3,000
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    • 10000 $0.459
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    Vishay Huntington SIA413DJ-T1-GE3

    MOSFET P-CH 12V 12A SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIA413DJ-T1-GE3 179,720
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    SIA413 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA413ADJ-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 12V 12A SC70-6 Original PDF
    SIA413DJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 12A SC70-6 Original PDF

    SIA413 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiA413DJ

    Abstract: SiA413DJ-T1-GE3
    Text: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • Halogen-free • TrenchFET Power MOSFET


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    PDF SiA413DJ SC-70 SC-70-6L-Single 08-Apr-05 SiA413DJ-T1-GE3

    SIA413ADJ

    Abstract: No abstract text available
    Text: SPICE Device Model SiA413ADJ www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


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    PDF SiA413ADJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    74691

    Abstract: AN609 SiA413DJ
    Text: SiA413DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    PDF SiA413DJ AN609 09-May-07 74691

    Untitled

    Abstract: No abstract text available
    Text: SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12a 0.100 at VGS = - 1.5 V -3 Qg (Typ.) 23 nC • TrenchFET Power MOSFET


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    PDF SiA413DJ SC-70 SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SIA413ADJ

    Abstract: No abstract text available
    Text: SiA413ADJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    PDF SiA413ADJ AN609, 3503u 1451u 8918m 6986u 9658m 5172m 16-Nov-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • Halogen-free • TrenchFET Power MOSFET


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    PDF SiA413DJ SC-70 SC-70-6L-Single SiA413DJ-T1-GE3 11-Mar-11

    SiA413DJ

    Abstract: No abstract text available
    Text: SPICE Device Model SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF SiA413DJ 18-Jul-08

    SIA413ADJ

    Abstract: No abstract text available
    Text: New Product SiA413ADJ Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12a 0.100 at VGS = - 1.5 V -3 Qg (Typ.)


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    PDF SiA413ADJ SC-70-6L-Single SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiA413

    Abstract: SIA413DJ
    Text: SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12a 0.100 at VGS = - 1.5 V -3 Qg (Typ.) 23 nC • TrenchFET Power MOSFET


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    PDF SiA413DJ SC-70 SC-70-6L-Single SiA413DJ-T4-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiA413

    SiA413DJ

    Abstract: SiA413DJ-T1-GE3 marking 22b sc70 SiA413 bfx DIODE
    Text: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • Halogen-free • TrenchFET Power MOSFET


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    PDF SiA413DJ SC-70 SC-70-6L-Single 11-Mar-11 SiA413DJ-T1-GE3 marking 22b sc70 SiA413 bfx DIODE

    SiA413DJ

    Abstract: bfx DIODE
    Text: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • TrenchFET Power MOSFET


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    PDF SiA413DJ SC-70 SC-70-6L-Single SiA413DJ-T1-E3 08-Apr-05 bfx DIODE

    SiA413DJ

    Abstract: SiA413DJ-T1-GE3
    Text: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • Halogen-free • TrenchFET Power MOSFET


    Original
    PDF SiA413DJ SC-70 SC-70-6L-Single 18-Jul-08 SiA413DJ-T1-GE3

    SiA413DJ

    Abstract: No abstract text available
    Text: SPICE Device Model SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF SiA413DJ S-71388Rev. 16-Jul-07

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • Halogen-free • TrenchFET Power MOSFET


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    PDF SiA413DJ SC-70 SC-70-6L-Single SiA413DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


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    PDF SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    SC-89-6

    Abstract: SiB914
    Text: Power mosfets O n - Re sista nce Rating s at V GS = 1. 2 V S M O S F E ts Key Benefits • Optimized for use with the low-voltage core ICs in portable electronics systems • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry


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    PDF VMN-PT0103-0802 SC-89-6 SiB914

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


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    PDF Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3