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    SI8410DB Price and Stock

    Vishay Siliconix SI8410DB-T2-E1

    MOSFET N-CH 20V 4MICRO FOOT
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    DigiKey SI8410DB-T2-E1 Cut Tape 6,188 1
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    SI8410DB-T2-E1 Digi-Reel 6,188 1
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    SI8410DB-T2-E1 Reel 6,000 3,000
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    New Advantage Corporation SI8410DB-T2-E1 6,000 1
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    Vishay Intertechnologies SI8410DB-T2-E1

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI8410DB-T2-E1)
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    Avnet Americas SI8410DB-T2-E1 Reel 18 Weeks 6,000
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    Mouser Electronics SI8410DB-T2-E1 26,219
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    Verical SI8410DB-T2-E1 3,000 3,000
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    Newark SI8410DB-T2-E1 Cut Tape 6,000
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    SI8410DB-T2-E1 Reel 6,000
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    Bristol Electronics SI8410DB-T2-E1 3,000
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    Quest Components SI8410DB-T2-E1 2,400
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    TTI SI8410DB-T2-E1 Reel 3,000 3,000
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    EBV Elektronik SI8410DB-T2-E1 22 Weeks 3,000
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    SI8410DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8410DB-T2-E1 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V MICROFOOT Original PDF

    SI8410DB Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8410DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si8410DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8410DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8410DB AN609, 2903u 2922u 8795u 4863u 1347m 9946m 7610m 1494m

    Untitled

    Abstract: No abstract text available
    Text: Si8410DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () MAX. ID (A) a 0.037 at VGS = 4.5 V 5.7 0.041 at VGS = 2.5 V 5.4 0.047 at VGS = 1.8 V 5.0 0.068 at VGS = 1.5 V 4.2 Qg (TYP.) D 3 1 m m m 1m


    Original     		PDF Si8410DB 841xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8410DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) a 0.037 at VGS = 4.5 V 5.7 0.041 at VGS = 2.5 V 5.4 0.047 at VGS = 1.8 V 5.0 0.068 at VGS = 1.5 V 4.2 Qg (TYP.) S 3 1 m m m 1m


    Original     		PDF Si8410DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8410DB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) a 0.037 at VGS = 4.5 V 5.7 0.041 at VGS = 2.5 V 5.4 0.047 at VGS = 1.8 V 5.0 0.068 at VGS = 1.5 V 4.2 Qg (TYP.) D 3 1 m m m 1m


    Original     		PDF Si8410DB 841xx 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / March 2015 Author: Kim Norton Tel: 1 408-970-5300 E-mail: [email protected] Si8410DB Chipscale N-Channel MOSFET With Industry's Lowest On-Resistance for a 20 V Device in the 1 mm2 Footprint Product Benefits: •


    Original     		PDF Si8410DB