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    SI7407DN Price and Stock

    Vishay Siliconix SI7407DN-T1-E3

    MOSFET P-CH 12V 9.9A PPAK 1212-8
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    DigiKey SI7407DN-T1-E3 Reel 3,000
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    Vishay Siliconix SI7407DN-T1-GE3

    MOSFET P-CH 12V 9.9A PPAK 1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7407DN-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
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    • 1000 -
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    SI7407DN Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7407DN Vishay Siliconix MOSFETs Original PDF
    Si7407DN SPICE Device Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF
    SI7407DN-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 9.9A PPAK 1212-8 Original PDF
    SI7407DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 9.9A PPAK 1212-8 Original PDF

    SI7407DN Datasheets Context Search

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    Si7407DN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7407DN 29-Mar-03

    Untitled

    Abstract: No abstract text available
    Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated


    Original     		PDF Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated


    Original     		PDF Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7407DN New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.012 @ VGS = -4.5 V -15.6 0.016 @ VGS = -2.5 V - 13.5 0.024 @ VGS = -1.8 V - 11 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKt


    Original     		PDF Si7407DN 07-mm S-21197--Rev. 29-Jul-02

    Si7407DN

    Abstract: No abstract text available
    Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated


    Original     		PDF Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7407DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (Ω) ID (A) 0.012 @ VGS = –4.5 V –15.6 0.016 @ VGS = –2.5 V –13.5 0.024 @ VGS = –1.8 V –11 • TrenchFET Power MOSFETS: 1.8-V Rated


    Original     		PDF Si7407DN 07-mm Si7407DN-T1 S-51210 27-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: Si7407DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.012 at VGS = – 4.5 V – 15.6 0.016 at VGS = – 2.5 V – 13.5 0.024 at VGS = – 1.8 V – 11 • TrenchFET Power MOSFETS: 1.8-V Rated


    Original     		PDF Si7407DN 07-mm Si7407DN-T1 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated


    Original     		PDF Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7407DN

    Abstract: No abstract text available
    Text: Si7407DN New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.012 @ VGS = -4.5 V -15.6 0.016 @ VGS = -2.5 V - 13.5 0.024 @ VGS = -1.8 V - 11 D TrenchFETr Power MOSFETS: 1.8-V Rated D New Low Thermal Resistance PowerPAKt


    Original     		PDF Si7407DN 07-mm S-22122--Rev. 25-Nov-02

    002VGS

    Abstract: No abstract text available
    Text: Si7407DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (Ω) ID (A) 0.012 @ VGS = –4.5 V –15.6 0.016 @ VGS = –2.5 V –13.5 0.024 @ VGS = –1.8 V –11 • TrenchFET Power MOSFETS: 1.8-V Rated


    Original     		PDF Si7407DN 07-mm Si7407DN-T1 08-Apr-05 002VGS

    ultra low igss pA

    Abstract: Si7407DN
    Text: Si7407DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.012 at VGS = – 4.5 V – 15.6 0.016 at VGS = – 2.5 V – 13.5 0.024 at VGS = – 1.8 V – 11 • TrenchFET Power MOSFETS: 1.8-V Rated


    Original     		PDF Si7407DN 07-mm Si7407DN-T1 S-51210 27-Jun-05 ultra low igss pA

    Untitled

    Abstract: No abstract text available
    Text: Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V - 15.6 0.016 at VGS = - 2.5 V - 13.5 0.024 at VGS = - 1.8 V - 11 • Halogen-free Option Available • TrenchFET Power MOSFETS: 1.8 V Rated


    Original     		PDF Si7407DN Si7407DN-T1 Si7407DN-T1-E3 Si7407DN-T1-GE3 08-Apr-05

    C 4977

    Abstract: AN609 Si7407DN 69211
    Text: Si7407DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7407DN AN609 23-Jul-07 C 4977 69211

    Si7407DN

    Abstract: No abstract text available
    Text: SPICE Device Model Si7407DN Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7407DN 18-Jul-08