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Vishay Siliconix SI4842BDY-T1-E3 MOSFET N-CH 30V 28A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4842BDY-T1-E3	Cut Tape	2,268		1	1 $3.2 10 $2.08 100 $3.2 1000 $1.0832 10000 $1.0832	Buy Now
	SI4842BDY-T1-E3	Digi-Reel	2,268		1	1 $3.2 10 $2.08 100 $3.2 1000 $1.0832 10000 $1.0832	Buy Now
	SI4842BDY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1	Buy Now
RS	SI4842BDY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.85	Get Quote
New Advantage Corporation	SI4842BDY-T1-E3		15,000		1	1 - 10 - 100 - 1000 - 10000 $0.6562	Buy Now
Vishay Siliconix SI4842BDY-T1-GE3 MOSFET N-CH 30V 28A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4842BDY-T1-GE3	Cut Tape	1,535		1	1 $3.17 10 $2.06 100 $3.17 1000 $1.07125 10000 $1.07125	Buy Now
	SI4842BDY-T1-GE3	Digi-Reel	1,535		1	1 $3.17 10 $2.06 100 $3.17 1000 $1.07125 10000 $1.07125	Buy Now
	SI4842BDY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.98712	Buy Now
Vishay Intertechnologies SI4842BDY-T1-GE3 Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4842BDY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4842BDY-T1-GE3	Reel		17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.96852	Buy Now
Mouser Electronics	SI4842BDY-T1-GE3		3,646			1 $2.63 10 $1.89 100 $1.43 1000 $1.08 10000 $0.987	Buy Now
Newark	SI4842BDY-T1-GE3	Cut Tape			2,500	1 - 10 - 100 - 1000 $1.54 10000 $1.54	Buy Now
TTI	SI4842BDY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.04	Buy Now
Vishay Intertechnologies SI4842BDY-T1-E3 Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4842BDY-T1-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4842BDY-T1-E3	Reel		17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.96852	Buy Now
Mouser Electronics	SI4842BDY-T1-E3		7			1 $2.99 10 $2.01 100 $1.42 1000 $1.15 10000 $1.15	Buy Now
Verical	SI4842BDY-T1-E3		2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.8999	Buy Now
Arrow Electronics	SI4842BDY-T1-E3		2,500	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.8919	Buy Now
Newark	SI4842BDY-T1-E3	Cut Tape			2,500	1 - 10 - 100 - 1000 $1.49 10000 $1.49	Buy Now
	SI4842BDY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.03	Buy Now

Bristol Electronics	SI4842BDY-T1-E3		25,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI4842BDY-T1-E3		2,866			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4842BDY-T1-E3		20,000			1 $2.85 10 $2.85 100 $2.85 1000 $1.0688 10000 $1.0688	Buy Now
TTI	SI4842BDY-T1-E3	Reel	17,500		2,500	1 - 10 - 100 - 1000 - 10000 $1.04	Buy Now
Chip-Germany GmbH	SI4842BDY-T1-E3		6,088			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI4842BDY-T1-E3			18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4842DY-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4842DY-T1		19,382			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4842DY-T1		2,500			1 - 10 - 100 - 1000 - 10000 -	Buy Now

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SI4842 Datasheets (8)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4842BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 28A 8-SOIC	Original	PDF
SI4842BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 28A 8-SOIC	Original	PDF
SI4842DY	Vishay	IC FPS7760A NCHANNEL SO8 MOSFET	Original	PDF
Si4842DY	Vishay Intertechnology	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4842DY	Vishay Siliconix	MOSFETs	Original	PDF
SI4842DY	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
Si4842DY SPICE Device Model	Vishay	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4842DY-T1	Vishay Intertechnology	N-Channel 30-V (D-S) MOSFET	Original	PDF

SI4842 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si4842DY Abstract: S-02445 Text: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si4842DY S-02445--Rev. 06-Nov-00 S-02445
Si4842BDY Abstract: Si4842DY Si4842DY-T1-E3 Si4842BDY-T1-E3 Si4842DY-T1 Text: Specification Comparison Vishay Siliconix Si4842BDY vs. Si4842DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4842BDY-T1-E3 Replaces Si4842DY-T1-E3 Si4842BDY-T1-E3 Replaces Si4842DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	PDF	Si4842BDY Si4842DY Si4842BDY-T1-E3 Si4842DY-T1-E3 Si4842DY-T1 06-Nov-06
Si4842BDY Abstract: Si4842BDY-T1-E3 Text: Si4842BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8	Original	PDF	Si4842BDY Si4842BDY-T1-E3 08-Apr-05
Si4842DY Abstract: Si4842DY-T1 Si4842DY-T1-E3 Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY	Original	PDF	Si4842DY Si4842DY-T1 Si4842DY--E3 Si4842DY-T1-E3 18-Jul-08
Si4842DY Abstract: No abstract text available Text: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si4842DY S-03662--Rev. 14-Apr-03
Untitled Abstract: No abstract text available Text: Si4842BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8	Original	PDF	Si4842BDY Si4842BDY-T1-E3 18-Jul-08
Si4842BDY Abstract: Si4842BDY-T1-E3 Si4842BDY-T1-GE3 Text: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested	Original	PDF	Si4842BDY Si4842BDY-T1-E3 Si4842BDY-T1-GE3 11-Mar-11
Si4842DY Abstract: No abstract text available Text: SPICE Device Model Si4842DY N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	PDF	Si4842DY sub-circu10
Untitled Abstract: No abstract text available Text: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested	Original	PDF	Si4842BDY Si4842BDY-T1-E3 Si4842BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: Si4842BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0042 @ VGS = 10 V 28 0.0057 @ VGS = 4.5 V 24 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8 D S 1 8	Original	PDF	Si4842BDY Si4842BDY-T1--E3 08-Apr-05
SI4842BDY-T1-E3 Abstract: Si4842BDY Si4842BDY-T1-GE3 Text: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested	Original	PDF	Si4842BDY Si4842BDY-T1-E3 Si4842BDY-T1-GE3 18-Jul-08
S-41576-Rev Abstract: Si4842DY Si4842DY-T1 Si4842DY-T1-E3 Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY	Original	PDF	Si4842DY Si4842DY-T1 Si4842DY--E3 Si4842DY-T1-E3 08-Apr-05 S-41576-Rev
Si4842DY Abstract: NC1036 71482 Text: \\\ SPICE Device Model Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4842DY 0-to-10V 19-Feb-02 NC1036 71482
2sc9018 Abstract: SL4X30MW100T AN602 2sc9018 transistor Text: AN602 Si4822/26/27/40/44 天线原理图、布局和设计指南 1. 引言本文档提供了常规 Si4822/26/27/40/44 设计和 AM/FM/SW 天线选型指南，包括原理图、 BOM 和 PCB 布局。所有用户均应遵守 “2. Si4822/26/27/40/44 默认波段的定义及选择 ” 和 “3. Si48422/26/27/40/44 SSOP/SOIC 原理图	Original	PDF	AN602 Si4822/26/27/40/44 Si48422/26/27/40/44 Si4826 Si4827 2sc9018 SL4X30MW100T AN602 2sc9018 transistor

Untitled Abstract: No abstract text available Text: Si4842BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0042 @ VGS = 10 V 28 0.0057 @ VGS = 4.5 V 24 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8 D S 1 8	Original	PDF	Si4842BDY Si4842BDY-T1 03-Oct-05
Untitled Abstract: No abstract text available Text: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested	Original	PDF	Si4842BDY Si4842BDY-T1-E3 Si4842BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si4842DY-T1-E3 Abstract: Si4842DY Si4842DY-T1 Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY	Original	PDF	Si4842DY Si4842DY-T1 Si4842DY--E3 Si4842DY-T1-E3 S-41576--Rev. 23-Aug-04
AN609 Abstract: Si4842DY Text: Si4842DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4842DY AN609 02-Mar-06
Untitled Abstract: No abstract text available Text: Si4842BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0042 @ VGS = 10 V 28 0.0057 @ VGS = 4.5 V 24 VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS COMPLIANT 29 nC SO-8 D S 1 8	Original	PDF	Si4842BDY Si4842BDY-T1--E3 51937--Rev. 03-Oct-05
Si4842DY Abstract: Si4842DY-T1 Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View Ordering Information: Si4842DY	Original	PDF	Si4842DY Si4842DY-T1 S-31726--Rev. 18-Aug-03
Untitled Abstract: No abstract text available Text: Si4842BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0042 at VGS = 10 V 28 0.0057 at VGS = 4.5 V 24 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested	Original	PDF	Si4842BDY Si4842BDY-T1-E3 Si4842BDY-T1-GE3 11-Mar-11
fr9220 Abstract: DPA426 Text: DPA423-426 DPA-Switch Family Highly Integrated DC-DC Converter ICs for Distributed Power Architectures Product Highlights VO Highly Integrated Solution • Eliminates 20-50 external components–saves space, cost • Integrates 200 V high frequency MOSFET, PWM control	Original	PDF	DPA423-426 stan00 17F-3, fr9220 DPA426
CT7343 Abstract: m7 sod123 6111T P8208 MT718 MMSZ470 MMSZ47 pe-68386 78m13 "Power over LAN" Text: SC4810B/E High Performance Current Mode PWM Controller with Complementary Output, Programmable Delay POWER MANAGEMENT Description Features The SC4810B/E is a 16 pin BICMOS primary side PWM controller for use in Isolated DC-DC and off-line switching	Original	PDF	SC4810B/E SC4810B/E MLPQ-16, CT7343 m7 sod123 6111T P8208 MT718 MMSZ470 MMSZ47 pe-68386 78m13 "Power over LAN"
R0805 Abstract: mosfet 4456 sot23-123 Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description Features The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and	Original	PDF	SC4910A/B MO-153, TSSOP-20 R0805 mosfet 4456 sot23-123

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SI4842 Price and Stock

Vishay Siliconix SI4842BDY-T1-E3

Vishay Siliconix SI4842BDY-T1-GE3

Vishay Intertechnologies SI4842BDY-T1-GE3

Vishay Intertechnologies SI4842BDY-T1-E3

Vishay Intertechnologies SI4842DY-T1

SI4842 Datasheets (8)

SI4842 Datasheets Context Search

Si4842DY

Si4842BDY

Si4842BDY

Si4842DY

Si4842DY

Untitled

Si4842BDY

Si4842DY

Untitled

Untitled

SI4842BDY-T1-E3

S-41576-Rev

Si4842DY

2sc9018

Untitled

Untitled

Si4842DY-T1-E3

AN609

Untitled

Si4842DY

Untitled

fr9220

CT7343

R0805