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    SI4433DY-T1

    Abstract: Si4433DY
    Text: Si4433DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.9 0.160 @ VGS = −2.5 V −3.2 0.240 @ VGS = −1.8 V −2.6 D TrenchFETr Power MOSFET D Fast Switching D 100% Rg Tested


    Original
    Si4433DY Si4433DY---E3 Si4433DYT1 Si4433DY-T1--E3 18-Jul-08 SI4433DY-T1 PDF

    Si4433DY

    Abstract: Si4433DY-T1 Si44
    Text: Si4433DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.110 @ VGS = - 4.5 V - 3.9 0.160 @ VGS = - 2.5 V - 3.2 0.240 @ VGS = - 1.8 V - 2.6 D TrenchFETr Power MOSFET D Fast Switching D 100% Rg Tested


    Original
    Si4433DY Si4433DY-T1 S-31726--Rev. 18-Aug-03 Si44 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4433DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.9 0.160 @ VGS = −2.5 V −3.2 0.240 @ VGS = −1.8 V −2.6 D TrenchFETr Power MOSFET D Fast Switching D 100% Rg Tested


    Original
    Si4433DY Si4433DY---E3 Si4433DYT1 Si4433DY-T1--E3 S-40932--Rev. 17-May-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4433DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −3.9 0.160 @ VGS = −2.5 V −3.2 0.240 @ VGS = −1.8 V −2.6 D TrenchFETr Power MOSFET D Fast Switching D 100% Rg Tested


    Original
    Si4433DY Si4433DY---E3 Si4433DYT1 Si4433DY-T1--E3 08-Apr-05 PDF