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Vishay Siliconix SI4413ADY-T1-E3 MOSFET P-CH 30V 10.5A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4413ADY-T1-E3	Cut Tape	1,405		1	1 $2.98 10 $1.932 100 $2.98 1000 $0.99729 10000 $0.99729	Buy Now
	SI4413ADY-T1-E3	Digi-Reel	1,405		1	1 $2.98 10 $1.932 100 $2.98 1000 $0.99729 10000 $0.99729	Buy Now
	SI4413ADY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.90788	Buy Now
Rochester Electronics LLC SI4410DY MOSFET N-CH 30V 10A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4410DY	Bulk			523	1 - 10 - 100 - 1000 $0.57 10000 $0.57	Buy Now
Infineon Technologies AG SI4410DY MOSFET N-CH 30V 10A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4410DY	Tube			95	1 - 10 - 100 $2.29389 1000 $2.29389 10000 $2.29389	Buy Now
onsemi SI4410DY MOSFET N-CH 30V 10A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4410DY	Cut Tape			1	1 $1.35 10 $1.35 100 $1.35 1000 $1.35 10000 $1.35	Buy Now
	SI4410DY	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.35658	Buy Now
Infineon Technologies AG SI4410DYPBF MOSFET N-CH 30V 10A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4410DYPBF	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SI4410DYPBF	Bulk			3,800	1 - 10 - 100 - 1000 - 10000 $0.81	Get Quote
Win Source Electronics	SI4410DYPBF		10,873			1 - 10 - 100 $1.519 1000 $1.274 10000 $1.274	Buy Now

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SI441 Datasheets (72)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4410BDY	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4410BDYE3	Vishay	IC, TR MOSFET-N 10A 30V SMT, SO-8	Original	PDF
SI4410BDY-E3	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
Si4410BDY SPICE Device Model	Vishay	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4410BDY-T1	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4410BDY-T1-E3	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4410BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.5A 8-SOIC	Original	PDF
SI4410BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.5A 8-SOIC	Original	PDF
Si4410DY	Fairchild Semiconductor	Single N-Channel Logic Level PowerTrench MOSFET	Original	PDF
SI4410DY	Fairchild Semiconductor	Single N-Channel Logic Level PowerTrench MOSFET	Original	PDF
SI4410DY	International Rectifier	HEXFET Power Mosfet	Original	PDF
SI4410DY	Kexin	N-Channel Enhancement Mode MOSFET	Original	PDF
SI4410DY	NXP Semiconductors	SI4410DY - N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 10 A; Qgd (typ): 7 nC; RDS(on): 13.5@[email protected] mOhm; VDSmax: 30 V	Original	PDF
SI4410DY	Philips Semiconductors	N-channel enhancement mode field-effect transistor	Original	PDF

Si4410DY	Philips Semiconductors	N-Channel Enhancement Mode Field-Effect Transistor	Original	PDF
Si4410DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI4410DY	Vishay Telefunken	N-channel 30-v (d-s) Mosfet	Original	PDF
SI4410DY	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier	Scan	PDF
SI4410DY,118	NXP Semiconductors	SI4410DY - N-channel TrenchMOS logic level FET, SOT96-1 Package, Standard Marking, Reel Pack, SMD, 13"	Original	PDF
SI4410DY,518	NXP Semiconductors	N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I_D DC: 10 A; Q_gd (typ): 7 nC; R_DS(on): 13.5@[email protected] mOhm; V_DSmax: 30 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13"	Original	PDF

SI441 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Diode HER 507 Abstract: No abstract text available Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V	Original	Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Diode HER 507	PDF
Si4410BDY Abstract: Si4410BDY-T1-E3 Si4410BDY-T1-GE3 Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si4410BDY 2002/95/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 11-Mar-11	PDF
MS-012AA Abstract: Si4410DY Text: PD - 91853C Si4410DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N-channel HEXFET® Power MOSFET is produced	Original	91853C Si4410DY 800mW MS-012AA	PDF
Untitled Abstract: No abstract text available Text: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	Si4412DY	PDF
Untitled Abstract: No abstract text available Text: Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si4416DY S-56945--Rev. 23-Nov-98	PDF
Si4412DY Abstract: No abstract text available Text: Si4412DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4412DY S44176Rev.	PDF
D0807 Abstract: Si4410DY Text: Si4410DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4410DY S45252Rev. D0807	PDF
SI4412DY Abstract: No abstract text available Text: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	Si4412DY	PDF
Untitled Abstract: No abstract text available Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch	Original	Si4410BDY Si4410BDY--T1 Si4410BDY--E3 Si4410BDY-T1--E3 18-Jul-08	PDF
Si4413DY Abstract: No abstract text available Text: SPICE Device Model Si4413DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4413DY 18-Jul-08	PDF
Si4412DY Abstract: No abstract text available Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V	Original	Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 18-Jul-08	PDF
Si4418DY Abstract: Si4418DY-T1-E3 Si4418DY-T1-GE3 Text: Si4418DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.130 at VGS = 10 V 3 0.142 at VGS = 6.0 V 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si4418DY Si4418DY-T1-E3 Si4418DY-T1-GE3 20lectual 18-Jul-08	PDF
c 6092 Abstract: Si4413CDY transistor 0882 AN609 Text: Si4413CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	Si4413CDY AN609, 05-Jun-08 c 6092 transistor 0882 AN609	PDF
74182 Abstract: 74182 data sheet 74182 datasheet S-60675 Si4413ADY Text: SPICE Device Model Si4413ADY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4413ADY 18-Jul-08 74182 74182 data sheet 74182 datasheet S-60675	PDF

Si4410DY Abstract: Si4936DY Si6434DQ Si9410DY Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8	Original	Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96	PDF
Untitled Abstract: No abstract text available Text: PD - 91853C Si4410DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N-channel HEXFET® Power MOSFET is produced	Original	91853C Si4410DY 800mW	PDF
Untitled Abstract: No abstract text available Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced	Original	Si4410DYPbF 800mW EIA-481 EIA-541.	PDF
irf 739 mosfet Abstract: mosfet irf 380 EIA-541 Si4410DYPbF ic power so 8 single mosfet Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced	Original	Si4410DYPbF 800mW EIA-481 EIA-541. irf 739 mosfet mosfet irf 380 EIA-541 ic power so 8 single mosfet	PDF
74307 Abstract: mosfet 4468 4484 AN609 Si4413ADY 112562 Text: Si4413ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4413ADY AN609 07-May-07 74307 mosfet 4468 4484 112562	PDF
Si4412DY Abstract: No abstract text available Text: Si4412DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "7.0 0.042 @ VGS = 4.5 V "5.8 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4412DY S-47958--Rev. 15-Apr-96	PDF
Untitled Abstract: No abstract text available Text: Si4411DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.010 at VGS = - 10 V - 13 0.0155 at VGS = - 4.5 V - 10 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC	Original	Si4411DY 2002/95/EC Si4411DY-T1-E3 Si4411DY-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si4413ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = - 10 V - 15 0.011 at VGS = - 4.5 V - 12.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET APPLICATIONS	Original	Si4413ADY Si4413ADY-T1-E3 Si4413ADY-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si4416DY VISHAY Vishay Siliconix N-Channel 30-V D-S MOSFET New Product PRODUCT SUM M ARY v „s (V) r d s (ON) (q 1 lD (A) 0.018 @ V GS = 10 V ±9 .0 0.028 @ VGS = 4.5 V ±7 .3 30 9° ' D D D D SO-8 6 s N-Channel MOSFET A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )	OCR Scan	Si4416DY S2SM735 DD17flflT	PDF
LD93 Abstract: FDR4410 SOIC-16 Text: A p ril 1 9 9 8 FAIRCHILD M IC Q N D U C T D R tm FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si441 ODY. • 9.3 A, 30 V. R d : 0.013 Q. @ VG : 10 V	OCR Scan	FDR4410 FDR4410 Si441 OT-23 OT-223 SOIC-16 FDR441 LD93 SOIC-16	PDF

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SI441 Search Results

SI441 Price and Stock

Vishay Siliconix SI4413ADY-T1-E3

Rochester Electronics LLC SI4410DY

Infineon Technologies AG SI4410DY

onsemi SI4410DY

Infineon Technologies AG SI4410DYPBF

SI441 Datasheets (72)

SI441 Datasheets Context Search

Diode HER 507

Si4410BDY

MS-012AA

Untitled

Untitled

Si4412DY

D0807

SI4412DY

Untitled

Si4413DY

Si4412DY

Si4418DY

c 6092

74182

Si4410DY

Untitled

Untitled

irf 739 mosfet

74307

Si4412DY

Untitled

Untitled

Untitled

LD93