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Silicon Laboratories Inc SI4460-C2A-GMR IC RF TXRX ISM<1GHZ 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4460-C2A-GMR	Digi-Reel	105,129		1	1 $7.95 10 $6.112 100 $4.9048 1000 $4.13406 10000 $4.13406	Buy Now
	SI4460-C2A-GMR	Cut Tape	105,129		1	1 $7.95 10 $6.112 100 $4.9048 1000 $4.13406 10000 $4.13406	Buy Now
	SI4460-C2A-GMR	Reel	102,500		2,500	1 - 10 - 100 - 1000 - 10000 $3.5	Buy Now
Mouser Electronics	SI4460-C2A-GMR		77,575			1 $4.3 10 $3.8 100 $3.5 1000 $3.5 10000 $3.41	Buy Now
Newark	SI4460-C2A-GMR	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $3.64	Buy Now
Symmetry Electronics	SI4460-C2A-GMR				1	1 $3.74 10 $3.74 100 $3.74 1000 $3.74 10000 $3.74	Buy Now
Win Source Electronics	SI4460-C2A-GMR		29,900			1 - 10 - 100 $1.674 1000 $1.435 10000 $1.435	Buy Now
Vishay Siliconix SI4431CDY-T1-GE3 MOSFET P-CH 30V 9A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4431CDY-T1-GE3	Reel	32,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.29418	Buy Now
RS	SI4431CDY-T1-GE3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.87	Get Quote
Bristol Electronics	SI4431CDY-T1-GE3		6			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	SI4431CDY-T1-GE3		10,000		1	1 - 10 - 100 - 1000 - 10000 $0.2933	Buy Now
Vishay Siliconix SI4434DY-T1-GE3 MOSFET N-CH 250V 2.1A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4434DY-T1-GE3	Digi-Reel	17,002		1	1 $3.68 10 $2.407 100 $3.68 1000 $1.27547 10000 $1.27547	Buy Now
	SI4434DY-T1-GE3	Cut Tape	17,002		1	1 $3.68 10 $2.407 100 $3.68 1000 $1.27547 10000 $1.27547	Buy Now
	SI4434DY-T1-GE3	Reel	15,000		2,500	1 - 10 - 100 - 1000 - 10000 $1.2095	Buy Now
Vishay Siliconix SI4463BDY-T1-GE3 MOSFET P-CH 20V 9.8A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4463BDY-T1-GE3	Digi-Reel	4,957		1	1 $2.32 10 $1.491 100 $2.32 1000 $0.74633 10000 $0.74633	Buy Now
	SI4463BDY-T1-GE3	Cut Tape	4,957		1	1 $2.32 10 $1.491 100 $2.32 1000 $0.74633 10000 $0.74633	Buy Now
UMW SI4425DY MOSFET P-CH 30V 8.7A/11.6A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4425DY	Digi-Reel	3,000		1	1 $0.54 10 $0.36 100 $0.54 1000 $0.1736 10000 $0.1736	Buy Now
	SI4425DY	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15094	Buy Now
	SI4425DY	Cut Tape	3,000		1	1 $0.54 10 $0.36 100 $0.54 1000 $0.1736 10000 $0.1736	Buy Now

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SI44 Datasheets (450)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4401BDY	Vishay Siliconix	P-Channel 40-V (D-S) MOSFET	Original	PDF
SI4401BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 8.7A 8-SOIC	Original	PDF
SI4401BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 8.7A 8-SOIC	Original	PDF
SI4401DDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 16.1A 8-SOIC	Original	PDF
Si4401DY	Vishay Intertechnology	P-Channel 40-V (D-S) MOSFET	Original	PDF
SI4401DY	Vishay Siliconix	P-Channel 40-V (D-S) MOSFET	Original	PDF
Si4401DY SPICE Device Model	Vishay	P-Channel 40-V (D-S) MOSFET	Original	PDF
SI4401DY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 8.7A 8-SOIC	Original	PDF
SI4401DY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 8.7A 8-SOIC	Original	PDF
SI4401FDY-T1-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 40V SO-8	Original	PDF
SI4403BDY	Vishay Siliconix	MOSFETs	Original	PDF
Si4403BDY SPICE Device Model	Vishay	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI4403BDY-T1	Vishay	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI4403BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.3A 8-SOIC	Original	PDF

SI4403BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.3A 8SOIC	Original	PDF
SI4403CDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 13.4A 8SOIC	Original	PDF
SI4403DDY-T1-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 8SOIC	Original	PDF
Si4403DY	Vishay Intertechnology	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI4403DY	Vishay Siliconix	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
Si4404DY	Vishay Intertechnology	N-Channel 30 V (D-S) MOSFET	Original	PDF

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SI44 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SI4431CDY Abstract: No abstract text available Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4431CDY Si4431CDY-T1-E3 Si4431CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
s0913 Abstract: No abstract text available Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature	Original	Si4486EY 2002/95/EC Si4486EY-T1-E3 Si4486EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s0913	PDF
Untitled Abstract: No abstract text available Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature	Original	Si4484EY 2002/95/EC Si4484EY-T1-E3 Si4484EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Diode HER 507 Abstract: No abstract text available Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V	Original	Si4412DY 2002/95/EC Si4412DY-T1-E3 Si4412DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Diode HER 507	PDF
Untitled Abstract: No abstract text available Text: Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.015 at VGS = - 10 V - 16.1 0.022 at VGS = - 4.5 V - 13.3 VDS (V) - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4401DDY 2002/95/EC Si4401DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SI4430B Abstract: si4430bd Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested	Original	Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4430B si4430bd	PDF
si4459a Abstract: SI4459 SI4459ADY-T1-GE3 Text: Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4459ADY 2002/95/EC Si4459ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4459a SI4459	PDF
Si4401DDY Abstract: No abstract text available Text: SPICE Device Model Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4401DDY 18-Jul-08	PDF
67341 Abstract: si4403C si4403 Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21	Original	Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 67341 si4403C si4403	PDF
bifa antenna Abstract: 868 printed antenna design HTA 200-S Si446x/Si4362 Text: AN686 A NTENNAS FOR THE S i4 4 5 5 /4 3 5 X RF IC S 1. Introduction This application note provides guidelines and design examples to help users design antennas for the next generation EZRadio RF ICs. The matching principles for the Si4455 are described in detail in “AN693: Si4455	Original	AN686 Si4455 AN693: Si4455 Si435x, Si446x AN643: Si446x/4362 AN685: Si4455/435x bifa antenna 868 printed antenna design HTA 200-S Si446x/Si4362	PDF
Untitled Abstract: No abstract text available Text: AN658 S i 4 4 6 X AND A R I B S TD - T 6 7 C O M P L I A N C E AT 4 2 6 – 4 2 9 M H Z 1. Introduction This application note demonstrates the compliance of Si446x-B0 RFICs with the regulatory requirements of ARIB STD-T67 V1.1, dated November 30th 2005 in the 426/429 MHz band. Although other members of the Si446x	Original	AN658 Si446x-B0 STD-T67 Si446x Si4461-B0 4461-TSC13D434 0x2201	PDF
Untitled Abstract: No abstract text available Text: AN440 Si4430/31/32 R EGISTER D ESCRIPTIONS 1. Complete Register Summary Table 1. Register Descriptions Add R/W Function/Desc D7 D6 D5 Data D4 D3 D2 D1 D0 POR Default 00 R Device Type dt[4] dt[3] dt[2] dt[1] dt[0] 08h 01 R Device Version vc[4] vc[3] vc[2] vc[1]	Original	AN440 Si4430/31/32	PDF
Si4450DY Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	Si4450DY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z	PDF
Si4430BDY Abstract: Si4430BDY-T1-E3 Si4430BDY-T1-GE3 Text: Si4430BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.006 at VGS = 4.5 V 17 Qg (Typ.) 24 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested	Original	Si4430BDY Si4430BDY-T1-E3 Si4430BDY-T1-GE3 11-Mar-11	PDF

Si4459ADY Abstract: No abstract text available Text: New Product Si4459ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.005 at VGS = - 10 V - 29 0.00775 at VGS = - 4.5 V - 23 VDS (V) - 30 • • • • Qg (Typ.) 61 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested	Original	Si4459ADY Si4459ADY-T1-GE3 150ed 08-Apr-05	PDF
Si4410BDY Abstract: Si4410BDY-T1-E3 Si4410BDY-T1-GE3 Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si4410BDY 2002/95/EC Si4410BDY-T1-E3 Si4410BDY-T1-GE3 11-Mar-11	PDF
Si4473DY Abstract: No abstract text available Text: Si4473DY New Product Vishay Siliconix P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.011 @ VGS = –4.5 V –13 APPLICATION 0.016 @ VGS = –2.5 V –11 D Battery Switch for Portable Equipment –14	Original	Si4473DY S-03657--Rev. 07-May-01	PDF
NS4160 Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .	Original	Si4463DY NS4160 4463 SO-8 4463 SO8 MOSFET	PDF
Untitled Abstract: No abstract text available Text: New Product Si4497DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = - 10 V - 36 0.0046 at VGS = - 4.5 V - 29 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4497DY 2002/95/EC Si4497DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/96/EC	Original	Si4426DY 2002/96/EC Si4426DY-T1-E3 Si4426DY-T1-GE3 18-Jul-08	PDF
Si4487DY-T1-GE3 Abstract: si4487 65473 Text: New Product Si4487DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0205 at VGS = - 10 V - 11.6 0.0375 at VGS = - 4.5 V - 8.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si4487DY 2002/95/EC Si4487DY-T1-GE3 18-Jul-08 si4487 65473	PDF
SI4470EY-T1-E3 Abstract: Si4470EY Text: Si4470EY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 12.7 0.013 at VGS = 6.0 V 11.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature	Original	Si4470EY 2002/95/EC Si4470EY-T1-E3 Si4470EY-T1-GE3 18-Jul-08	PDF
MS-012AA Abstract: Si4410DY Text: PD - 91853C Si4410DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N-channel HEXFET® Power MOSFET is produced	Original	91853C Si4410DY 800mW MS-012AA	PDF
Untitled Abstract: No abstract text available Text: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	Si4420DY	PDF

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Silicon Laboratories Inc SI4460-C2A-GMR

Vishay Siliconix SI4431CDY-T1-GE3

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Vishay Siliconix SI4463BDY-T1-GE3

UMW SI4425DY

SI44 Datasheets (450)

SI44 Datasheets Context Search

SI4431CDY

s0913

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Diode HER 507

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SI4430B

si4459a

Si4401DDY

67341

bifa antenna

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Si4450DY

Si4430BDY

Si4459ADY

Si4410BDY

Si4473DY

NS4160

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Si4487DY-T1-GE3

SI4470EY-T1-E3

MS-012AA

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