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Vishay Intertechnologies SI4382DY-T1-E3 MOSFETs 30V 4.7mohm@10V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SI4382DY-T1-E3					1 - 10 - 100 - 1000 - 10000 $1.07	Get Quote
Vishay Intertechnologies SI4382DY-T1-GE3 MOSFETs 30V 4.7mohm @ 10V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SI4382DY-T1-GE3					1 - 10 - 100 - 1000 - 10000 $1.07	Get Quote

SI4382 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI43-820		Xinwang Electronics	SMT Power Inductor		Original	PDF

SI4382 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2429 Abstract: 6710 mosfet 9933 c 9933 mosfet AN609 Si4382DY Text: Si4382DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4382DY AN609 10-Sep-07 2429 6710 mosfet 9933 c 9933 mosfet
Si4382DY Abstract: No abstract text available Text: SPICE Device Model Si4382DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4382DY 18-Jul-08
Si4382DY Abstract: No abstract text available Text: Si4382DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES rDS on (W) ID (A) 0.0047 at VGS = 10 V 20 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D 100 % Rg Tested 0.0062 at VGS = 4.5 V	Original	PDF	Si4382DY Si4382DY-T1 18-Jul-08
Si4382DY Abstract: si4382 Text: Si4382DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES rDS on (W) ID (A) 0.0047 at VGS = 10 V 20 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D 100 % Rg Tested 0.0062 at VGS = 4.5 V	Original	PDF	Si4382DY Si4382DY-T1 52452--Rev. 28-Nov-05 si4382
a2711 Abstract: No abstract text available Text: Si4382DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES rDS on (W) ID (A) 0.0047 at VGS = 10 V 20 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D 100 % Rg Tested 0.0062 at VGS = 4.5 V	Original	PDF	Si4382DY Si4382DY-T1 08-Apr-05 a2711
Untitled Abstract: No abstract text available Text: SMT Power Inductor SI 43 Type Features RoHS compliant. Low profile 2.5mm max.height SMD type. Unshielded. Self-leads,suitable for high density mounting. High energy storage and low DCR Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,	Original	PDF	098Max 100KHz SI43-1R0L SI43-1R2L SI43-1R5L SI43-1R8L SI43-2R2L 100uH.
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	PDF	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS