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    SI3456 Price and Stock

    Vishay Siliconix SI3456DDV-T1-GE3

    MOSFET N-CH 30V 6.3A 6TSOP
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    DigiKey SI3456DDV-T1-GE3 Cut Tape 85,192 1
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    SI3456DDV-T1-GE3 Digi-Reel 85,192 1
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    SI3456DDV-T1-GE3 Reel 81,000 3,000
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    Quest Components SI3456DDV-T1-GE3 12,000
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    New Advantage Corporation SI3456DDV-T1-GE3 90,000 1
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    Vishay Siliconix SI3456DDV-T1-E3

    MOSFET N-CH 30V 6.3A 6TSOP
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    DigiKey SI3456DDV-T1-E3 Digi-Reel 4,940 1
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    SI3456DDV-T1-E3 Cut Tape 4,940 1
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    SI3456DDV-T1-E3 Reel 3,000
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    Vishay Siliconix SI3456DDV-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI3456DDV-T1-BE3 Cut Tape 4,397 1
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    SI3456DDV-T1-BE3 Digi-Reel 4,397 1
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    SI3456DDV-T1-BE3 Reel 3,000
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    Rochester Electronics LLC SI3456DV

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey SI3456DV Bulk 1,665
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    Vishay Siliconix SI3456BDV-T1-E3

    MOSFET N-CH 30V 4.5A 6TSOP
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    DigiKey SI3456BDV-T1-E3 Reel 3,000
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    SI3456BDV-T1-E3 Digi-Reel 1
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    SI3456BDV-T1-E3 Cut Tape 1
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    RS SI3456BDV-T1-E3 Bulk 3,000
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    Find more SI3456 price and stock on Findchips.com

    SI3456 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3456BDV Vishay Siliconix MOSFETs Original PDF
    Si3456BDV SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI3456BDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.5A 6-TSOP Original PDF
    Si3456BDV-T1-E3 Vishay Telefunken Original PDF
    SI3456BDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4.5A 6-TSOP Original PDF
    SI3456CDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.7A 6TSOP Original PDF
    SI3456CDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.7A 6TSOP Original PDF
    SI3456DDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.3A 6TSOP Original PDF
    SI3456DDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.3A 6-TSOP Original PDF
    SI3456DV Fairchild Semiconductor N-Channel PowerTrench MOSFET Original PDF
    Si3456DV Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si3456DV Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI3456DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI3456DV_NF073 Fairchild Semiconductor N-Channel PowerTrench MOSFET Original PDF
    SI3456DV_NL Fairchild Semiconductor N-Channel PowerTrench MOSFET Original PDF
    Si3456DV SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SI3456DV-T1 Vishay Telefunken FET Transistor, N Channel, 1 VThreshold, ID ±5.1 A, TSOP, Tape and Reel Original PDF

    SI3456 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3456DV N-Channel PowerTrenchÒ MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF Si3456DV NF073 NF073

    S-80735

    Abstract: Si3456CDV
    Text: SPICE Device Model Si3456CDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3456CDV 18-Jul-08 S-80735

    Untitled

    Abstract: No abstract text available
    Text: Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.0 0.052 at VGS = 4.5 V 4.9 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3456BDV 2002/95/EC Si3456BDV-T1-E3 Si3456BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3456DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 5.1 0.065 @ VGS = 4.5 V 4.3 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm


    Original     		PDF Si3456DV Si3456DV-T1 08-Apr-05

    Si3456

    Abstract: Si3456DV
    Text: Si3456DV N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "5.1 0.065 @ VGS = 4.5 V "4.3 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si3456DV S-51274--Rev. 17-Feb-97 Si3456

    Untitled

    Abstract: No abstract text available
    Text: Si3456DV N-Channel PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF Si3456DV

    Si3456DDV

    Abstract: a1615
    Text: SPICE Device Model Si3456DDV Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si3456DDV 18-Jul-08 a1615

    Si3456BDV

    Abstract: Si3456BDV-T1-E3 Si3456BDV-T1-GE3
    Text: Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.0 0.052 at VGS = 4.5 V 4.9 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3456BDV 2002/95/EC Si3456BDV-T1-E3 Si3456BDV-T1-GE3 18-Jul-08

    Si3456DDV

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 Qg (Typ.) APPLICATIONS • Load Switch 2.8 nC • HDD


    Original     		PDF Si3456DDV Si3456DDV-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3456DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 5.1 0.065 @ VGS = 4.5 V 4.3 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm


    Original     		PDF Si3456DV Si3456DV-T1 S-531725--Rev. 18-Aug-03

    Si3456DDV

    Abstract: SI3456CDV Si3456CDV-T1-E3 Si3456CDV-T1-GE3 SI3456DDV-T1-GE3 si3456dd
    Text: Specification Comparison Vishay Siliconix Si3456DDV vs. Si3456CDV Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3456DDV-T1-GE3 replaces Si3456CDV-T1-GE3 Si3456DDV-T1-E3 or Si3456DDV-T1-GE3 replaces Si3456CDV-T1-E3


    Original     		PDF Si3456DDV Si3456CDV Si3456DDV-T1-GE3 Si3456CDV-T1-GE3 Si3456DDV-T1-E3 Si3456CDV-T1-E3 20-Jul-09 si3456dd

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si3456BDV

    Abstract: Si3456BDV SPICE Device Model
    Text: SPICE Device Model Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3456BDV S-50383Rev. 21-Mar-05 Si3456BDV SPICE Device Model

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 6.0 0.052 @ VGS = 4.5 V 4.9 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm


    Original     		PDF Si3456BDV Si3456BDV-T1--E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    A12S

    Abstract: Si3456DV
    Text: SPICE Device Model Si3456DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3456DV 07-May-01 A12S

    4511 mosfet

    Abstract: 03-FEB-09 4511 AN609 Si3456DDV
    Text: Si3456DDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si3456DDV AN609, 03-Feb-09 4511 mosfet 03-FEB-09 4511 AN609

    68341

    Abstract: that 2159 AN609 Si3456CDV 32-1014
    Text: Si3456CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3456CDV AN609 03-Jan-08 68341 that 2159 32-1014

    Si3456DV

    Abstract: Si3456DV-T1 1458R
    Text: Si3456DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.045 @ VGS = 10 V 5.1 0.065 @ VGS = 4.5 V 4.3 D TrenchFETr Power MOSFET D 100% Rg Tested (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm


    Original     		PDF Si3456DV Si3456DV-T1 18-Jul-08 1458R

    Si3456CDV

    Abstract: Si3456CDV-T1-E3 Si3456CDV-T1-GE3
    Text: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 18-Jul-08

    SI3456C

    Abstract: No abstract text available
    Text: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI3456C