SI2337DS REV Search Results

SI2337DS REV Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
LM4546BVHX/NOPB		Texas Instruments	AC ''97 Rev 2.1 Codec with Sample Rate Conversion and National 3D Sound 48-LQFP -40 to 85
TPS25810RVCT		Texas Instruments	USB Type-C Rev 1.2 DFP Controller and Power Switch With Load Detection 20-WQFN -40 to 125
TPS25810TWRVCRQ1		Texas Instruments	Automotive USB Type-C Rev 1.2 DFP Controller and Power Switch With Load Detection 20-WQFN -40 to 105
LM4546BVH/NOPB		Texas Instruments	AC ''97 Rev 2.1 Codec with Sample Rate Conversion and National 3D Sound 48-LQFP -40 to 85
LM4550BVH/NOPB		Texas Instruments	AC ''97 Rev 2.1 Codec with Sample Rate Conversion and National 3D Sound 48-LQFP -40 to 85

SI2337DS REV Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SPICE Device Model Si2337DS www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	PDF	Si2337DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
74139 Abstract: 74139 datasheet data sheet 74139 Si2337DS Text: SPICE Device Model Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si2337DS 18-Jul-08 74139 74139 datasheet data sheet 74139
Si2337DS Abstract: Si2337DS-T1-E3 Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 18-Jul-08
SI2337DS Abstract: SI2337DS-T1-E3 Si2337DS rev ic MARKING QG 100-ETA Si2337DS Rev. A Text: Si2337DS New Product Vishay Siliconix P-Channel 80-V D-S MOSFET ‘ FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET ID rDS(on) (W) –80 (A)a 0.270 @ VGS = –10 V –2.2 0.303 @ VGS = –6 V –2.1 APPLICATIONS Qg (Typ) RoHS D Automotive such as	Original	PDF	Si2337DS O-236 OT-23) Si2337DS-T1 52230--Rev. 24-Oct-05 SI2337DS-T1-E3 Si2337DS rev ic MARKING QG 100-ETA Si2337DS Rev. A
74139 Abstract: data sheet 74139 74139 datasheet Si2337DS S5229 v636 si2337 Text: SPICE Device Model Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si2337DS S-52290Rev. 31-Oct-05 74139 data sheet 74139 74139 datasheet S5229 v636 si2337
Untitled Abstract: No abstract text available Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 11-Mar-11
Si2337DS-T1-E3 Abstract: Si2337DS Si2337DS Rev. A Text: New Product Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a rDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ) • TrenchFET Power MOSFET RoHS 7 COMPLIANT TO-236 (SOT-23) S G 1	Original	PDF	Si2337DS O-236 OT-23) Si2337DS-T1-E3 08-Apr-05 Si2337DS Rev. A
Untitled Abstract: No abstract text available Text: Si2337DS www.vishay.com Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.270 at VGS = -10 V -2.2 0.303 at VGS = -6 V -2.1 VDS (V) -80 Qg (TYP.) 7 • TrenchFET power MOSFET • Material categorization: for definitions of compliance please see	Original	PDF	Si2337DS OT-23 O-236) Si2337DS-T1-E3 Si2337DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 VDS (V) - 80 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
Si2337DS Abstract: Si2337DS-T1-E3 si2337 Text: New Product Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a rDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ) • TrenchFET Power MOSFET RoHS 7 COMPLIANT TO-236 (SOT-23) S G 1	Original	PDF	Si2337DS O-236 OT-23) Si2337DS-T1-E3 18-Jul-08 si2337
Si2337DS Abstract: Si2337DS-T1-E3 Si2337DS Rev. A Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 11-Mar-11 Si2337DS Rev. A
si2337 Abstract: SI2337DS-T1-E3 Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2337
Untitled Abstract: No abstract text available Text: Si2337DS Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 ID (A)a RDS(on) (Ω) 0.270 at VGS = - 10 V - 2.2 0.303 at VGS = - 6 V - 2.1 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2337DS O-236 OT-23) Si2337DS-T1-E3 Si2337DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
C3216X7R1H105K Abstract: DR74-680-R GRM32ER71H475KA88 Si2328DS 3519f pwm circuits using 555 555 for dc dc boost converter 246 six pin switch si2337ds C3216X7R1E475K Text: LT3519 LED Driver with Integrated Schottky Diode FEATURES n n n n n n n n n n n n n n DESCRIPTION Up to 3000:1 True Color PWM Dimming Wide Input Voltage Range Operation from 3V to 30V Transient Protection to 40V Floating LED Current Sense from 0V to 45V	Original	PDF	LT3519 750mA 400kHz LT3519) 16-Lead LT3591 3519f C3216X7R1H105K DR74-680-R GRM32ER71H475KA88 Si2328DS 3519f pwm circuits using 555 555 for dc dc boost converter 246 six pin switch si2337ds C3216X7R1E475K

LT3519-1 Abstract: pwm generator Text: LT3519/LT3519-1/LT3519-2 LED Driver with Integrated Schottky Diode FEATURES n n n n n n n n n n n n n n DESCRIPTION Up to 3000:1 True Color PWM Dimming Wide Input Voltage Range Operation from 3V to 30V Transient Protection to 40V Rail-to-Rail LED Current Sense from 0V to 45V	Original	PDF	LT3519/LT3519-1/LT3519-2 750mA 400kHz LT3519) LT3519-1) LT3519-2) 16-Lead LT3591 3519fa LT3519-1 pwm generator
Untitled Abstract: No abstract text available Text: LT3519/LT3519-1/LT3519-2 LED Driver with Integrated Schottky Diode FEATURES n n n n n n n n n n n n n n DESCRIPTION Up to 3000:1 True Color PWM Dimming Wide Input Voltage Range Operation from 3V to 30V Transient Protection to 40V Rail-to-Rail LED Current Sense from 0V to 45V	Original	PDF	LT3519/LT3519-1/LT3519-2 750mA 400kHz LT3519) LT3519-1) LT3519-2) 16-Lead LT3591 3519fa
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	PDF	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477