ADC08D1520WGFQV
Abstract: krad 5962F0520601VZC 748 amplifier national 748
Text: ADC08D1520WGFQV Dual Channel, 8-Bit, 1.5 GSPS Analog-to-Digital Converter with Latch-up Levels of 120 MeV and 300 krad Si Superior Single Event Latch-Up Levels of 120 MeV and 300 krad (Si) for Total Ionizing Dose at Only 1W per Channel, the Lowest Power in the Industry
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ADC08D1520WGFQV
ADC08D1520WGFQV,
krad
5962F0520601VZC
748 amplifier
national 748
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KPT801C
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT801C Features •NPN phototransistor •Ceramic package •Low leak current Dimensions (unit: mm) Applications •Optical switches •Optical encoders •Photo-isolators
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2002/95/EC)
KPT801C
0905/KPT801C)
KPT801C
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npn phototransistor
Abstract: phototransistor 600 nm
Text: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT081M31 Features •NPN phototransistor •Transparent epoxy mold •Low leak current Dimensions (unit: mm) Applications •Optical switches •Optical encoders •Photo-isolator
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2002/95/EC)
KPT081M31
0905/KPT081M31)
npn phototransistor
phototransistor 600 nm
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KPD3065C
Abstract: KPD3065
Text: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD3065C Features •Transparent epoxy potting •High sensitivity Dimensions (unit: mm) Applications •Optical switches Optical encoders •Optical •Pulse detectors •Sensors and industrial controls
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2002/95/EC)
KPD3065C
0905/KPD3065C)
KPD3065C
KPD3065
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD30S Features •Transparent epoxy mold •High sensitivity Dimensions (unit: mm) Applications •Optical switches Optical encoders •Optical •Pulse detectors •Sensors and industrial controls
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2002/95/EC)
KPD30S
0905/KPD30S)
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KPD101M32
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD101M32 Features •Transparent epoxy mold •High sensitivity Dimensions (unit: mm) Applications •Optical Optical switches •Optical encoders •Pulse detectors •Sensors and industrial controls
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2002/95/EC)
KPD101M32
0910/KPD101M32)
KPD101M32
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KPD101M31
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD101M31 Features •Transparent epoxy mold •High sensitivity Dimensions (unit: mm) Applications •Optical Optical switches •Optical encoders •Pulse detectors •Sensors and industrial controls
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2002/95/EC)
KPD101M31
0910/KPD101M31)
KPD101M31
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KPD1201H
Abstract: KPD120
Text: This product complies with the RoHS Directive EU 2002/95/EC . Si Photodiode KPD1201H Features •Hermetic seal type for high reliability uses •Sharp directivity Dimensions (unit: mm) Applications •Optical switches Optical encoders •Optical •Pulse detectors
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2002/95/EC)
KPD1201H
0905/KPD1201H)
KPD1201H
KPD120
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AN23
Abstract: AN27 AN28 SX52BD
Text: POP3 Post Office Protocol version 3 Implementation on SX Microcontroller Application Note 28 Abraham Si October 1999 Patents Pending 1.0 Introduction +OK khsi scenix.com POP Server signing off (mailbox empty) POP session complete, 1171 bytes transferred!
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RFC1725
SXL-AN28-02
AN23
AN27
AN28
SX52BD
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UPA101
Abstract: UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 UPA104 RF TRANSISTOR NPN MICRO-X
Text: California Eastern Laboratories AN-SI-1001 APPLICATION NOTE Ultrahigh Frequency Transistor Arrays: UPA101/102/103/104 INTRODUCTION SUMMARY In recent years there has been a rapidly increasing demand for high-frequency amplifiers and high-speed logic devices,
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AN-SI-1001
UPA101/102/103/104
UPA104
UPA104
UPA104B
UPA101
UPA101-104
Transistor Array differential amplifier
UPA101B
UPA101G
UPA102
UPA102G
UPA103
RF TRANSISTOR NPN MICRO-X
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MMIC WIDE-BAND AMPLIFIER sot-363
Abstract: uPC2757TB
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2757TB / UPC2758TB 3 V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES CONVERSION GAIN vs. LO FREQUENCY 25 • HIGH-DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package Conversion Gain dB • WIDEBAND OPERATION:
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UPC2757TB
UPC2758TB
OT-363
UPC2758TB
UPC2757TB
MMIC WIDE-BAND AMPLIFIER sot-363
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mm glass lens phototransistor
Abstract: kpt801h Infrared phototransistor TO18 glass lens phototransistor
Text: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT801HB Features •NPN phototransistor packaged in a 2 leads TO-18 •Glass lens or visible-cut black epoxy lens •Low leak current Dimensions (unit: mm) Applications •Optical switches
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2002/95/EC)
KPT801HB
0905/KPT801HB)
mm glass lens phototransistor
kpt801h
Infrared phototransistor TO18
glass lens phototransistor
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IC 431
Abstract: 567 tone NEC C 324 C 302 zl IC 567 transistor outline package 3 567 ic UPC2762T UPC2762TB UPC2762TB-E3
Text: 3 V, SUPER MINIMOLD UPC2762TB MEDIUM POWER SI MMIC AMPLIFIER FEATURES INSERTION POWER GAIN vs. FREQUENCY AND TEMPERATURE • WIDE BANDWIDTH: 2.9 GHz at -3 dB • SUPER SMALL PACKAGE: SOT-363 package • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION
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UPC2762TB
OT-363
UPC2762TB
UPC2762T,
UPC2762TB-E3
24-Hour
IC 431
567 tone
NEC C 324 C
302 zl
IC 567
transistor outline package 3
567 ic
UPC2762T
UPC2762TB-E3
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Untitled
Abstract: No abstract text available
Text: SI6928DQ VISHAY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY v „s (V) r d s (ON) (-3) lD (A) 0.035 @ V GS = 10 V ±4 .0 0.050 @ VGS = 4.5 V ±3 .4 30 D2 Di O TSSOP-8 d2 Di Si s2 Si6928DQ Si s2 Gi g2 Top View 6 6 Si s2 N-Channel MOSFET
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SI6928DQ
Si6928DQ
S-56945â
23-Nov-98
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Untitled
Abstract: No abstract text available
Text: SI6969DQ VISH A Y Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product Si S2 o 9 TSSOP-8 d2 Di Si s2 s2 Gi g2 Si Si6969DQ Top View 6 6 Di d2 A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED ) P A R A M ETER SYM BOL
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SI6969DQ
Si6969DQ
S-59527â
19-Oct-98
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Untitled
Abstract: No abstract text available
Text: SI6968DQ VISHAY Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 r DS(ON) Id (& ) (A) 0.022 @ VGS = 4.5 V ±6 .5 0.030 @ VGS = 2.5 V ±5 .5 D D N-Channel MOSFET N-Channel MOSFET TSSOP-8 D Si D Si6968DQ S2 Si S2 Gi g2 Gi Top View
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SI6968DQ
Si6968DQ
S-56943â
02-Nov-98
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Untitled
Abstract: No abstract text available
Text: SI6967DQ VISHAY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUM M AR Y V DS (V) -8 r DS(ON) I d (A) (& ) 0.030 @ VGS = —4.5 V ±5 .0 0.045 @ VGS = -2 .5 V ±4 .0 0.070 @ VGS = -1 .8 V ±3 .0 I* ' v* Si s2 o 9 TSSOP-8 d2 Di Si s2
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SI6967DQ
Si6967DQ
S-59525â
12-Oct-98
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Untitled
Abstract: No abstract text available
Text: SÌ4948EY VI^HWW Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET Product Summary V d s (V) r DS(on) ( ^ ) -60 0.120 @ Vos = -1 0 V 0.150 @ VGs = —4-5 V - ite * I d (A) ±3.1 ±2.8 Alvv:v ^ p o '« 6 ' s2 Si Q Q SO -8 Si I X Gl 1~T_ ~n Di ~ n Di G2 I 4
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4948EY
S-57253--Rev.
24-Feb-98
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Untitled
Abstract: No abstract text available
Text: SÌ6969DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product PRO DUCT SUMM ARY V ob 0 0 -12 R d s (o n ) <&) • d (A) 0.034 VQ S = -4 .5 V ±4.6 0.050 O V GS = -2.5 V ±3.8 0.075 @ V q s = -1.6 V ±3.0 e 'i'V ’ v* S2 o Si Q TSSOP-8 Di E Si ce
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6969DQ
S-59527--
19-Oct-98
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Untitled
Abstract: No abstract text available
Text: Si9948AEY VISHAY Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET New Product Product Sum m ary VDS(V) -60 r DS(on) (£2) I d (A) 0.17 @ VGs = -10V ±2.6 0.26 @ VGs = -4.5 V ±2.1 P 0 'N T Si O S2 Q SO-8 si |~ r ~B~I Di Gi [ T ~ 1 Di 6 | D2 S2 [ T G2 I 4
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Si9948AEY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: SÌ6966EDQ VISHAY ▼ Siliconix Dual N-Ch 2.5-V G-S MOSFET, ESD Protected New Product PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) ) I d (A) 0.030 @ V GS = 4.5 V ± 5 .2 0.040 @ V GS = 2.5 V ± 4 .5 20 ESD Protected 4000 V TSSOP-8 Di n . Si Œ Si Œ Gì E J] D2
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6966EDQ
S-56972--
17-Aug-98
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EL-1L2
Abstract: No abstract text available
Text: PACKAGE PI AGRAM O U T L I N E S LEADLESS CHIP CARRIER C o n tin u e d DCN REV 17296 01 DESCRIPTION UPDATE DATE TO S T A N D A R D I Z E APPROVAL DRAWI NG A NOTES: (UNLES OTHERWI SE A A L L D IMEN SI ON S A RE 2. BSC - BA SI C LEAD BETWEEN CENTERS. IN INCHES.
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L52-2
EL-1L2
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Untitled
Abstract: No abstract text available
Text: PACKAGE DIAGRAM O UTLIN ES FLATPACK C o n tin u e d DCN REV 23158 00 DESCRIPTION DATE APPROVAL NTIAL RELEASE D3 D1 D D2/E2 PIN .030 45” NOTES: ( U N L E S S OTHEEWI S E SPECI EED) 1. A LL D IMEN SI ON S A RE IN INCHES. 2. BSC - BA SI C LEAD S P A CI NG BETWEEN CENTERS.
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F84-3
91EWISE
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Untitled
Abstract: No abstract text available
Text: R R II Monolithic tlwui Memories Si BER Single Burst Error Recovery IC SN74S48o / / / / / / / / / ///////////////////////////////////ADVANCE INFORMATION Features/ Benefits Typical Applications • Bipolar S TTL technology allows fast data rate • Disk drives
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SN74S48o
16-bit
32-bit
910-33S-2374
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