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    SEMIX302GB126HDS Search Results

    SEMIX302GB126HDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMiX302GB126HDs Semikron Trench IGBT Modules Original PDF

    SEMIX302GB126HDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C


    Original     		PDF SEMiX302GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX302GB126HDs E6353SEMiX302GB126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		PDF SEMiX302GB126HDs E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		PDF SEMiX302GB126HDs SEMiX302GB126HDs E63532

    DIODE 35

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 311 A Tc = 80 °C 218 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		PDF SEMiX302GB126HDs E63532 DIODE 35

    Untitled

    Abstract: No abstract text available
    Text: SEMiX302GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 311 A Tc = 80°C 218 A 400 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 292 A Tc = 80°C 202 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


    Original     		PDF SEMiX302GB126HDs

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1