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SEMIKRON SEMIX202GB066HDS Igbt Module, Dual, 600V, 275A; Continuous Collector Current:275A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:45W; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes \|Semikron SEMIX202GB066HDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX202GB066HDS	Bulk			6	1 - 10 $97.42 100 $89.07 1000 $89.07 10000 $89.07	Buy Now
RS	SEMIX202GB066HDS	Bulk			1	1 $371.06 10 $341.38 100 $341.38 1000 $341.38 10000 $341.38	Get Quote
SEMIKRON SEMIX202GB066HDS 27891110 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX202GB066HDS 27891110				1	1 $296.99 10 $234.86 100 $210.63 1000 $210.63 10000 $210.63	Get Quote

SEMIX202GB066HDS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SEMIX202GB066HDS		Semikron	Trench IGBT Modules		Original	PDF

SEMIX202GB066HDS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX202GB066HDs	PDF
Untitled Abstract: No abstract text available Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX202GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V	Original	SEMiX202GB066HDs SEMiX202GB066HDs E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C	Original	SEMiX202GB066HDs E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 274 A Tc = 80°C 207 A 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 291 A Tc = 80°C 214 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules	Original	SEMiX202GB066HDs	PDF
semikron ms 8/4 Abstract: No abstract text available Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX202GB066HDs E63532 semikron ms 8/4	PDF
Positive Temperature Coefficient Abstract: No abstract text available Text: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX202GB066HDs E63532 B100/125 R100exp B100/125 1/T-1/T100) Positive Temperature Coefficient	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF