D5001ng
Abstract: D50 01ng NID5001NT4G NID5001N NID5001NT4 D5001N
Text: NID5001N Self−Protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while
|
Original
|
PDF
|
NID5001N
NID5001/D
D5001ng
D50 01ng
NID5001NT4G
NID5001N
NID5001NT4
D5001N
|
369A-13
Abstract: NID5001N NID5001NT4 5001N
Text: NID5001N Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while
|
Original
|
PDF
|
NID5001N
NID5001N/D
369A-13
NID5001N
NID5001NT4
5001N
|
Untitled
Abstract: No abstract text available
Text: NID5001N Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while
|
Original
|
PDF
|
NID5001N
NID5001N/D
|
Untitled
Abstract: No abstract text available
Text: NID5001N Self−Protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while
|
Original
|
PDF
|
NID5001N
NID5001/D
|
5001N
Abstract: No abstract text available
Text: NID5001N Preferred Device Self-Protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while
|
Original
|
PDF
|
NID5001N
5001N
|
NID5001N
Abstract: NID5001NT4
Text: NID5001N Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while
|
Original
|
PDF
|
NID5001N
NID5001N/D
NID5001N
NID5001NT4
|
Untitled
Abstract: No abstract text available
Text: NID5001N Preferred Device Advance Information Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while
|
Original
|
PDF
|
NID5001N
NID5001N/D
|
"GSM IC"
Abstract: AN1602 DCS1800 MC33169 MMSF4N01HD MRFIC0913 MRFIC0917 MRFIC1817 MRFIC1818 27dBmOutput
Text: Order this document by AN1602/D AN1602 3.6 V and 4.8 V GSM/DCS1800 Dual-Band PA Application with DECT Capability Using Standard Motorola RFIC's Prepared by: Gilles Montoriol, Christophe Fourtet, Dominique Brunel, Jean Baptiste Verdier and Jacques Trichet Wireless Subscriber Group, RF Semiconductor Division. Motorola Semiconductor S. A.
|
Original
|
PDF
|
AN1602/D
AN1602
GSM/DCS1800
MRFIC0913
MRFIC1818
DCS1800.
MC33169
MMSF4N01HD
RFAN1602/D
"GSM IC"
AN1602
DCS1800
MC33169
MMSF4N01HD
MRFIC0917
MRFIC1817
27dBmOutput
|
STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
|
Original
|
PDF
|
OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
|
8D021-62198745
Abstract: 1N914 LT1308 LT1374 LT1374-SYNC LT1534I LTC1660I MBRS330T3 IR10BQ015 Semicondutor technology
Text: Linear Technology Chronicle C=>?@ABC FG May 1998 Vol. 7 No. 5 Chinese Edition Simplified @ABC 100 VOUT = 5V VIN = 10V L = 10µH 4.5A/500kHz r s t u v w x yz { | } SO-8 ~ ¡ ¢z £¤B¥¦§¨r ªª« EFFICIENCY (%) 95 90 85 80 75 LT 1374-SYNC ¬ & ® ¯ ° ± ²
|
Original
|
PDF
|
A/500kHz
1374-SYNC
LT1374-SYNC
500kHz²
455kHz
LT1374SYNC
WD100101X
8D010-64923725
YD010-64991424
WD200335X
8D021-62198745
1N914
LT1308
LT1374
LT1374-SYNC
LT1534I
LTC1660I
MBRS330T3
IR10BQ015
Semicondutor technology
|
75t202/75T203
Abstract: 73K324L 75T202 75T202-IP 75T203 75T203-IP DTMF Receiver
Text: 75T202/203 5V Low-Power DTMF Receiver February 1998 DESCRIPTION FEATURES The 75T202 and 75T203 are complete Dual-tone Multifrequency DTMF receivers detecting a selectable group of 12 or 16 standard digits. No front-end pre-filtering is needed. The only externally
|
Original
|
PDF
|
75T202/203
75T202
75T203
75T203
75t202/75T203
73K324L
75T202-IP
75T203-IP
DTMF Receiver
|
75T202-IP
Abstract: 75T202 73K324L 75T203 75T203-IP TDK TPW
Text: 75T202/203 5V Low-Power DTMF Receiver February 1998 DESCRIPTION FEATURES The 75T202 and 75T203 are complete Dual-tone Multifrequency DTMF receivers detecting a selectable group of 12 or 16 standard digits. No front-end pre-filtering is needed. tHe only externally
|
Original
|
PDF
|
75T202/203
75T202
75T203
75T203
75T202-IP
18-Pin
75T203-IP
73K324L
75T202-IP
73K324L
75T203-IP
TDK TPW
|
transistor poly3
Abstract: RR510 RR-504 RR-520 X28C256 rr520
Text: Xicor Endurance Report Xicor Endurance Report RR-520 H. A.R. Wegener INTRODUCTION This report describes endurance relating to Xicor’sproducts employing the Direct WriteTM cell. These devices display enhanced endurance cycling characteristics that are attributable to the direct write cell, process
|
Original
|
PDF
|
RR-520
RR-504
000PageCycles
transistor poly3
RR510
RR-504
RR-520
X28C256
rr520
|
li-ion battery SERVICE MANUAL
Abstract: battery li-ion users manual MCP1630 MCP6292 PIC12F683 CMS01 battery charger linear MCU HDR1X5
Text: MCP1630 Low-Cost Li-Ion Battery Charger User’s Guide 2005 Microchip Technology Inc. DS51555A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
|
Original
|
PDF
|
MCP1630
DS51555A
DS51555A-page
li-ion battery SERVICE MANUAL
battery li-ion users manual
MCP6292
PIC12F683
CMS01
battery charger linear MCU
HDR1X5
|
|
|
CU-106A
Abstract: 0.4mm pitch BGA IPC-6012A beagleboard 0.4mm pitch BGA routing IPC-6012 IPC-D-317 NAND FLASH LGA reflow profile CU-106A shelf life CBB Capacitor Selection Guide
Text: Application Report SPRAAV1B – May 2009 PCB Design Guidelines for 0.4mm Package-On-Package PoP Packages, Part I Keith Gutierrez and Gerald Coley . ABSTRACT
|
Original
|
PDF
|
|
TTE24C256
Abstract: TTE24C
Text: 256K-bit 2-Wire Serial CMOS EEPROM TTE24C256 Preliminary Description The TTE24C256 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C256 contains a memory array of 256K-bits 32,768 x 8 , and is further subdivided into 512 pages of 64 bytes each
|
Original
|
PDF
|
256K-bit
TTE24C256
TTE24C256
256K-bits
TTE24C
|
TTE24C
Abstract: No abstract text available
Text: 64K-bit/32K-bit 2-Wire Serial CMOS EEPROM TTE24C32/TTE24C64 Preliminary Description The TTE24C32/TTE24C64 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C32/TTE24C64 contains a memory array of 32K-bits 4Kx8 and 64K-bits (8Kx8) repectively, and
|
Original
|
PDF
|
64K-bit/32K-bit
TTE24C32/TTE24C64
TTE24C32/TTE24C64
32K-bits
64K-bits
TE24C32/TTE24C64
TTE24C
|
TTE24C
Abstract: No abstract text available
Text: 8-bit 2-Wire Serial CMOS EEPROM TTE24C08A Preliminary Description The TTE24C08A is an extended temperature operational range electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C08A contains a memory array of 8-bits 1,024 x 8 , and is further
|
Original
|
PDF
|
TTE24C08A
TTE24C08A
TTE24C
|
Untitled
Abstract: No abstract text available
Text: p iC R ü N 16K LATCHED SRAM X MT5C2818 18 LATCHED SRAM 16K X 18 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 Packages 52-pin PLCC 52-pin PQFP PIN ASSIGNMENT Top View
|
OCR Scan
|
PDF
|
MT5C2818
52-Pin
MT5C2816
|
LT 5251
Abstract: DP2 marking
Text: MT5C2818 16K X 18 L A T C H E D S R A M |U |C Z R O N 16K X 18 SRAM LATCHED SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • OPTIONS 52-Pin PLCC SC-2 52-Pin PQFP (SC-5) S =1111 SB s s m ÏÏIUJ < <lolcDI£D > > 15 < I o 5 4 3 2 Packages 52-pin PLCC
|
OCR Scan
|
PDF
|
MT5C2818
52-Pin
MT5C2816
LT 5251
DP2 marking
|
SSI75T202
Abstract: ATB12
Text: SSI 75T202/203 mmsvsknts 5V Low-Power DTMF Receiver A TDK G rou p /C om p any October 1991 DESCRIPTION FEATURES The SSI 75T202 and 75T203 are complete Dual-Tone Multifrequency DTMF receivers detecting a se lectable group of 12 or 16 standard digits. No front-end
|
OCR Scan
|
PDF
|
75T202/203
75T202
75T203
58-MHz
s75T202
18-pin
SSI75T202
ATB12
|
Untitled
Abstract: No abstract text available
Text: SSI 75T202/203 5V Low-Power DTMF Receiver cé m â tà m s A TDK Group/Company October 1991 DESCRIPTION FEATURES The SSI 75T202 and 75T203 are complete Dual-Tone Multifrequency DTMF receivers detecting a se lectable group of 12 or 16 standard digits. No front-end
|
OCR Scan
|
PDF
|
75T202/203
75T202
75T203
58-MHz
or75T203
C202-IP
75T202-IP
75T203
18-pin
|
75T203-IP
Abstract: ATB12 75T202-IP
Text: SSI 75T202/203 m 5V Low-Power DTMF Receiver M M b n s A TDK Group/Company October 1991 FEATURES DESCRIPTION The S S I 75T202 and 75T203 are complete Dual-Tone Multifrequency D T M F receivers detecting a se lectable group of 12 or 16 standard digits. No front-end
|
OCR Scan
|
PDF
|
75T202/203
75T202
75T203
or75T203
18-pin
75T202-IP
75T203-IP
75T203-IP
ATB12
75T202-IP
|
Untitled
Abstract: No abstract text available
Text: MT5C2818 16K X 18 LATCHED SRAM MICRON I KWCOWWCTW MC LATCHED SRAM 16K x 18 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • • • • • • Fast access times: 1 5 ,2 0 and 25ns Fast Output Enable: 6, 8 and 10ns Single +5V ±10% power supply
|
OCR Scan
|
PDF
|
MT5C2818
52-Pin
lfTSC201B
|
