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    SEM 3040 IC Search Results

    SEM 3040 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    71322L70P Renesas Electronics Corporation 2K X 8 DUALPORT RAM W/SEM Visit Renesas Electronics Corporation
    71322S70J Renesas Electronics Corporation 2K X 8 DUALPORT RAM W/SEM Visit Renesas Electronics Corporation
    71322S70J8 Renesas Electronics Corporation 2K X 8 DUALPORT RAM W/SEM Visit Renesas Electronics Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SEM 3040 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sem 3040

    Abstract: DSC-3040 A12L A13L IDT70V261 IDT70V261L IDT70V261S IDT70V261PF
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V261S Active: 300mW (typ.)


    Original     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L 660mW IDT70V261S/L IDT70V261 70V261 sem 3040 DSC-3040 A12L A13L IDT70V261L IDT70V261S IDT70V261PF

    sem 3040

    Abstract: DSC-3040 A12L A13L IDT70V261 IDT70V261L IDT70V261S IDT70V261PF 70V261L
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V261S Active: 300mW (typ.)


    Original     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261S/L IDT70V261 660mW sem 3040 DSC-3040 A12L A13L IDT70V261L IDT70V261S IDT70V261PF 70V261L

    sem 3040

    Abstract: DSC-3040 A12L A13L IDT70V261 IDT70V261L IDT70V261S 70V261L
    Text: PRELIMINARY IDT70V261S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.


    Original     		PDF IDT70V261S/L 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261 100-pin PN100-1) sem 3040 DSC-3040 A12L A13L IDT70V261L IDT70V261S 70V261L

    sem 3040

    Abstract: A13L IDT70V261 IDT70V261L IDT70V261S
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Š Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation


    Original     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261S/L IDT70V261 sem 3040 A13L IDT70V261L IDT70V261S

    sem 3040

    Abstract: DSC-3040
    Text: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Š Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation


    Original     		PDF IDT70V261S/L 25/35/55ns IDT70V261S 300mW IDT70V261L IDT70V261 sem 3040 DSC-3040

    sem 3040 ic

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V261S/L In te g ra te d D e v ic e T e c h n o lo g y , In c. FEATURES: • • • • • True Dual-Ported m em ory cells which allow sim ulta­ neous access of the sam e m em ory location H igh-speed access


    OCR Scan     		PDF IDT70V261S/L 25/35/55ns IDT70V261S IDT70V261L IDT70V261 100-pin 70V261 sem 3040 ic

    sem 3040 ic

    Abstract: No abstract text available
    Text: 1 HIGH-SPEED 3.3V 16K X 16 DUAL-PORT STATIC RAM WITH INTERRUPT dt PRELIMINARY IDT70V261S/L Integrated De vice Technology, Inc. FEATURES: • • True Dual-Ported m em ory cells w hich allow sim ulta­ neous access of the sam e m em ory location • H igh-speed access


    OCR Scan     		PDF IDT70V261S/L 25/35/55ns IDT70V261S IDT70V261L IDT70V261 100-pin PN100-1) 70V261 sem 3040 ic

    sem 3040 ic

    Abstract: sem 3040 ic all data
    Text: I N T E G R A T E » D E VI CE bflE D • M Ô 5 S 77 1 0 0 1 4 3 7 2 47b ■ IDT HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology. Inc FEATURES: PRELIMINARY IDT70V261S/L • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave


    OCR Scan     		PDF IDT70V261S/L 100-pin PN100-1) 70V261 sem 3040 ic sem 3040 ic all data

    sem 3040 ic

    Abstract: DSC-3040
    Text: P > Integrated Device Technology, Inc. HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM FEATURES: PRELIMINARY IDT70V261S/L more using the Master/Slave select when cascading more than one device M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave


    OCR Scan     		PDF IDT70V261S/L 25/35/55ns IDT70V261S 300mW IDT70V2611Active: IDT70V261 IDT70V261S/L 100-pin PN100-1) sem 3040 ic DSC-3040

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM F e a tu re s * * True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access - * ♦ ♦ ♦ ♦ Low-power operation - ♦ Commercial: 25/35/55ns max. IDT70V261S


    OCR Scan     		PDF 25/35/55ns IDT70V261S 300mW IDT70V261L 660mW IDT70V261S/L IDT70V261 492-M

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V261S/L Integrated Device Technology, Inc. FEATURES: • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Interrupt Flag • Devices are capable of withstanding greater than 2001V


    OCR Scan     		PDF IDT70V261S/L 100-pin 25/35/55ns PN100-1) 70V261 QG17b43

    sem 3040

    Abstract: No abstract text available
    Text: m PRELIMINARY IDT70V261S/L HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Interrupt Flag • Devices are capable of withstanding greater than 2001V


    OCR Scan     		PDF IDT70V261S/L 100-pin 25/35/55ns PN100-1) 70V261 4A2S771 sem 3040

    Untitled

    Abstract: No abstract text available
    Text: 12E D I b3b7HSS Q071bQ7 3 | MOTOROLA SC -CDI0DES/0PT03- T -0 3 -II MOTOROLA SEM ICONDUCTOR TECHNICAL DATA A dvan ce In form ation SCHOTTKY RECTIFIERS SWITCHMODE RECTIFIERS 0.5 AMPERE 30-40 VOLTS . . . designed for use in switching power supplies, inverters, and


    OCR Scan     		PDF -CDI0DES/0PT03- Q071bQ7 DO-204AH DO-35)

    Untitled

    Abstract: No abstract text available
    Text: s e MIKRO n V rsm Rectifier Diodes Ifav sin. 180; Tease — 7 5 °C V rrm V 1550 A 400 SKN 1500/04 SKN 1500 SKN 2000 2 00 0 A SKN 2000/06 600 1200 SKN 1500/12 SKN 2000/12 1600 SKN 1500/16 SKN 2000/16 2 000 SKN 2000/20 2400 SKN 1500/20 SKN 1500/24 2 900


    OCR Scan     		PDF B8-35 013bb71 0GDb334

    Untitled

    Abstract: No abstract text available
    Text: R e v is io n s Tolerances A p p ro v e d D a te M .H . D e s c r i p t io n / A p p r o v e d / D a t e 1- 20= + /- 0.2 C hecked D a te M .H . 20-30=+/-0.3 30-40=+/-0.4 40-50=+/-0.5 D ra w n D a te 0 8 /2 3 /2 0 0 7 T . J .A . 50-100=+/-0.75 100-300=+/-1.5


    OCR Scan     		PDF ZZ-R-765 -B-626 -T-799 Q-P-35 -S-764 -C-530 QQ-B-750 LTI-NLM31NT-086

    Untitled

    Abstract: No abstract text available
    Text: Tolerances Revisions Description/Approved/Date Approved 1- 20= + /- 0.2 1 . L e n g th c h a n g e d fr o m 10 t o 1 0 .3 m m Checked 20-30=+/-0.3 30-40=+/-0.4 40-50=+/-0.5 50-100=+/-0.75 100-300=+/-1.5 Angles=+/-1 Dimensions are in Millimeters Date M .H .


    OCR Scan     		PDF ZZ-R-765 -B-626 -T-799 -P-35 -S-764 -C-530 TI-MXLM31G T-086

    Untitled

    Abstract: No abstract text available
    Text: R e v is io n s A p p ro v e d Tolerances D e b c rl p t Io n /A p p ro v e d /D a te 1- 20= + / - 0.2 1 . P a rt le n q th , b o d y , c rim p stem / M.H. 20-30=+/-0.3 1 1 /1 4 /0 0 C hecked D a te M .H . 0 3 /1 2 /0 2 1 1 /1 4 /0 0 D ra w n 30-40=+/-0.4


    OCR Scan     		PDF T/-MXSF31GT-047 MXSF31-047

    Untitled

    Abstract: No abstract text available
    Text: R e v is io n s Tolerances A p p ro v e d D a te M .H . D e s c r i p t io n / A p p r o v e d / D a t e 0 7 /0 2 /0 3 1- 20= + / - 0.2 0 7 /0 2 /0 3 M .H . 20-30=+/-0.3 30-40=+/-0.4 D ra w n 40-50=+/-0.5 NO TE S plating thickness 5. P e r M IL-P-19468 9. Nickel pi. 100 m in. over


    OCR Scan     		PDF IL-P-19468 ZZ-R-765 QQ-B-626 Q-P-35 Q-S-764 -C-530 Q-B-750 T/-SBSF33RGT-086

    LS 2027 Final Audio

    Abstract: LS 2027 audio DATA SHEET 2025h TAA 611 T12 SAB 2024 schematic diagram lcd monitor dell 16 bit 8096 microcontroller architecture 8096 microcontroller architecture application LS 2027 MDA 2020
    Text: S IE M E N S ICs for Communications Joint Audio Decoder-Encoder JADE PSB 7280 Version 2.2 Preliminary Data Sheet 8.96 This Material Copyrighted By Its Respective Manufacturer T7280-XV22-D1-7600 PSB 7280 R evision H istory 8.96 Previous Releases:none Page Subjects changes since last revision


    OCR Scan     		PDF T7280-XV22-D1 P-TQFP-100 14x14 D100X LS 2027 Final Audio LS 2027 audio DATA SHEET 2025h TAA 611 T12 SAB 2024 schematic diagram lcd monitor dell 16 bit 8096 microcontroller architecture 8096 microcontroller architecture application LS 2027 MDA 2020

    sem 3040

    Abstract: sem 3040 ic Dp83233
    Text: ÌO/IOOBASE-T MAGNETICS MODULE Pulse A TECHNITROL Designed for Transmission UTP-5 Cable COMPANY Combines 10Base-T and 100Base-TX signals for a one-connector port Designed to withstand infrared and vapor phase soldering Pick and place compatible Low profile, surface mount package


    OCR Scan     		PDF 10Base-T 100Base-TX PE-69016 P958-50. sem 3040 sem 3040 ic Dp83233

    sem 3040

    Abstract: No abstract text available
    Text: DEVICE SPECIFICATION FEATURES GENERAL DESCRIPTION Micro-power Bipolar technology Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation On-chip high frequency PLL with internal loop filter for clock recovery


    OCR Scan     		PDF OC-48/STM-16 S3040 OC-48/STM-16 sem 3040

    1N SERIES DIODE

    Abstract: Zener Diode LT 432 MOTOROLA ZM 1N zener diode 1n 3016 b
    Text: MOTOROLA SC Tb -CDIODES/OPTOÏ ¿7 DE 1 1 3 b 75S S □□7flDlb ö | 1N3821thru 1N3830 MOTOROLA S E R IE S SEM ICO N DU CTO R 1N3016 thru 1N3051 TECHNICAL DATA S E R IE S .^ D c ' s ig n c ii^ iW r t t a S h e o i 1.0 W A T T 1.0 WATT M ETA L SILICON ZEN ER DIODES


    OCR Scan     		PDF 1N3821thru 1N3830 1N3016 1N3051 IL-S-19500 007flQSl 1N3821 1N3830, 1N SERIES DIODE Zener Diode LT 432 MOTOROLA ZM 1N zener diode 1n 3016 b

    Untitled

    Abstract: No abstract text available
    Text: DEVICE SPECIFICATION FEATURES Micro-power Bipolar technology Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation On-chip high frequency PLL with internal loop filter for clock recovery Supports clock recovery for OC-48/STM-16


    OCR Scan     		PDF S3040 OC-48/STM-16

    D033

    Abstract: A1 D036
    Text: T O S H IB A THMY6432G1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6432G1EG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY6432G1EG-75 432-WORD 64-BIT THMY6432G1EG TC59SM708FT 64-bit 168-pin D033 A1 D036