AN-994
Abstract: IRFB4310 IRFS4310 IRFSL4310 IRF high current n-channel irf 540 mosfet
Text: PD - 96894 IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS on in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt
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IRFB4310
IRFS4310
IRFSL4310
O-220
O-220AB
O-262
EIA-418.
AN-994
IRFB4310
IRFS4310
IRFSL4310
IRF high current n-channel
irf 540 mosfet
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IRFB4310
Abstract: irf 540 mosfet IRFS4310 AN-994 IRFSL4310 irf 30A
Text: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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6894A
IRFB4310
IRFS4310
IRFSL4310
O-220
O-220AB
O-262
IRFB4310
irf 540 mosfet
IRFS4310
AN-994
IRFSL4310
irf 30A
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IRFB4310
Abstract: irf 540 mosfet AN-994 IRFS4310 IRFSL4310 irf 100v 100A
Text: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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6894A
IRFB4310
IRFS4310
IRFSL4310
O-220
O-220AB
O-262
IRFB4310
irf 540 mosfet
AN-994
IRFS4310
IRFSL4310
irf 100v 100A
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IRFS4310
Abstract: AN-994 SL4310 irf 540 mosfet IRFS4310PBF
Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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14275D
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
O-220AB
O-262
EIA-418.
IRFS4310
AN-994
SL4310
irf 540 mosfet
IRFS4310PBF
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IRFS4310PBF
Abstract: No abstract text available
Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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14275D
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
O-220AB
O-262
EIA-418.
IRFS4310PBF
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MOSFET IRF 540
Abstract: irf 540 mosfet AN-994 IRFS4310PBF
Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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14275D
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
O-220AB
O-262
EIA-418.
MOSFET IRF 540
irf 540 mosfet
AN-994
IRFS4310PBF
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irf 418
Abstract: irf 48v mosfet irf 540 mosfet IRFS4310PBF
Text: PD - 14275C IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS on typ.
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14275C
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
O-220AB
IRFB4310PbF
IRFS4310PbF
O-262
EIA-418.
irf 418
irf 48v mosfet
irf 540 mosfet
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Untitled
Abstract: No abstract text available
Text: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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6894A
IRFB4310
IRFS4310
IRFSL4310
O-220
O-220AB
O-262
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Untitled
Abstract: No abstract text available
Text: PD - 95090B IRLR3915PbF IRLU3915PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 14mΩ
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95090B
IRLR3915PbF
IRLU3915PbF
AN-994.
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irf 540 mosfet
Abstract: No abstract text available
Text: PD - 95090B IRLR3915PbF IRLU3915PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 14mΩ
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95090B
IRLR3915PbF
IRLU3915PbF
IRLR3915S
AN-994.
irf 540 mosfet
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TO-247AC Package
Abstract: IRFP064V irf 2030
Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ
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IRFP064V
O-247
TO-247AC Package
IRFP064V
irf 2030
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irf 2030 n
Abstract: irf 2030 IRF 545 IRFP064V
Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ
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IRFP064V
O-247
O-247AC
irf 2030 n
irf 2030
IRF 545
IRFP064V
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Untitled
Abstract: No abstract text available
Text: PD - 95090 IRLR3915PbF IRLU3915PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D
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IRLR3915PbF
IRLU3915PbF
AN-994.
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IRF 042
Abstract: irf 540 mosfet IRL3803 IRLI3803
Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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1320B
IRLI3803
O-220
IRF 042
irf 540 mosfet
IRL3803
IRLI3803
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IRFIZ34N
Abstract: IRFZ34N MOSFET 150 N IRF
Text: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ34N
O-220
IRFIZ34N
IRFZ34N
MOSFET 150 N IRF
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IRFIZ46N
Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ46N
O-220
IRFIZ46N
IRFZ46N
MOSFET IRF 630
IRFZ46N equivalent
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irf 480
Abstract: IRFIZ24E IRFZ24N IRFz24n equivalent
Text: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24E
O-220
irf 480
IRFIZ24E
IRFZ24N
IRFz24n equivalent
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irf 44 n
Abstract: 1329B IRLIZ34N IRLZ34N
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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1329B
IRLIZ34N
O-220
irf 44 n
1329B
IRLIZ34N
IRLZ34N
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IRFIZ24N
Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24N
O-220
IRFIZ24N
1501a
IRFZ24N
irf 480
irf 044 mosfet
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5M MARKING CODE DIODE 5A 100V
Abstract: No abstract text available
Text: PD - 95087 IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω
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IRLR/U3410PbF
IRLR3410)
IRLU3410)
O-252AA)
EIA-481
EIA-541.
EIA-481.
5M MARKING CODE DIODE 5A 100V
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1501a
Abstract: IRFZ24N IRFIZ24N irf 480
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24N
O-220
1501a
IRFZ24N
IRFIZ24N
irf 480
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Equivalent IRF 44
Abstract: ultra low igss pA IRL2505 IRLI2505
Text: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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IRLI2505
O-220
Equivalent IRF 44
ultra low igss pA
IRL2505
IRLI2505
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Equivalent IRF 44
Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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1329B
IRLIZ34N
O-220
Equivalent IRF 44
IRLIZ34N
1329B
IRLZ34N
e4019
mosfet irf 150
irliz34
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D7810hg
Abstract: D78C10 NEC D78C10 IC CD 4011 BCN 78C10 7810H 77fe 78C11 D7810 PCF 7900
Text: M O S S M tU fê M O S Integrated Circuit /¿ P D 7 8 I f -y 8 C 1 0 A .7 8 C 1 1A ,7 8 C 1 2 A h ï □ 3 y f j - ^ A / D V•H^ ^P D 7 8 C 1 1 A Ü 1 6 t'-y h A L U , ROM , RAM, A /D su ■4 ^^IZ^^IZÔOK CMOS 8 t ' y h • 4 ^4 'J (R O M /R A M £ iÉ 5 g T * ë £ t „
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OCR Scan
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PDF
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78C10A
78C12AÜ
D7810hg
D78C10
NEC D78C10
IC CD 4011 BCN
78C10
7810H
77fe
78C11
D7810
PCF 7900
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