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    SCT T/A 250V Search Results

    SCT T/A 250V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RQK2501YGDQA#H1 Renesas Electronics Corporation Nch Single Power Mosfet 250V 0.4A 5400Mohm Mpak/Sc-59 Visit Renesas Electronics Corporation
    HAT2089R-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 2A 600Mohm Sop8 Visit Renesas Electronics Corporation
    H5N2508DL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 7A 630Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SK1761-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 12A 350Mohm To-220Ab Visit Renesas Electronics Corporation
    H5N2505DSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 5A 890Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation

    SCT T/A 250V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic melody generator

    Abstract: AN2201 AN2203 HUW-66 Q11 DPDT AS253X 4013AN huw66 AN3020 4013 Microphone
    Text: Preliminary AN2203 Application Note AN2203: AS2533.6 Single Chip Telephone  Austria Mikro Systeme International AG with on-hook dialing, loudhearing and music-on-hold with auto-release 1. Scope This application note describes a simple, low cost and step-by-step upgradable application for the


    Original     		PDF AN2203 AN2203: AS2533. AN2203 ic melody generator AN2201 HUW-66 Q11 DPDT AS253X 4013AN huw66 AN3020 4013 Microphone

    Midcom modem transformer 671-8005

    Abstract: fsk modulator demodulator intel fsk modulator demodulator free of lm 1458 rs232 4n35 IEEE EARTHING 202S 73K212AL psk modulator demodulator 73K302L
    Text: 73K302L Bell 212A, 103, 202 Single-Chip Modem April 2000 DESCRIPTION FEATURES The 73K302L is a highly integrated single-chip modem IC which provides the functions needed to construct a Bell 202, 212A and 103 compatible modem. The 73K302L is an enhancement of the


    Original     		PDF 73K302L 73K302L 73K212L substrateK302L-IH Midcom modem transformer 671-8005 fsk modulator demodulator intel fsk modulator demodulator free of lm 1458 rs232 4n35 IEEE EARTHING 202S 73K212AL psk modulator demodulator

    dr 5v

    Abstract: No abstract text available
    Text: 73K302L Bell 212A, 103, 202 Single-Chip Modem April 2000 DESCRIPTION FEATURES The 73K302L is a highly integrated single-chip modem IC which provides the functions needed to construct a Bell 202, 212A and 103 compatible modem. The 73K302L is an enhancement of the


    Original     		PDF 73K302L 73K212L dr 5v

    Untitled

    Abstract: No abstract text available
    Text: 73K302L Bell 212A, 103, 202 Single-Chip Modem TDK SEMICONDUCTOR CORP. April 2000 DESCRIPTION FEATURES The 73K302L is a highly integrated single-chip modem IC which provides the functions needed to construct a Bell 202, 212A and 103 compatible modem. The 73K302L is an enhancement of the


    Original     		PDF 73K302L 73K212L

    FSK v.23

    Abstract: MIDCOM 671-8005 73K324L 321L 73K212AL 80C51 fsk modulator ccitt r1 73K324L-IP
    Text: 73K324L CCITT V.22bis, V.22, V.21, V.23, Bell 212A Single-Chip Modem April 2000 DESCRIPTION FEATURES The 73K324L is a highly integrated single-chip modem IC which provides the functions needed to design a Quad-mode CCITT and Bell 212A compatible modem capable of operation over dial-up


    Original     		PDF 73K324L 22bis, 73K324L 73K224 FSK v.23 MIDCOM 671-8005 321L 73K212AL 80C51 fsk modulator ccitt r1 73K324L-IP

    671-8005

    Abstract: QAM FSK demodulator v250l20 intel 8039 C 12 PH Zener diode circuit diagram of calling bell free datasheet of lm 1458 tdk cd y1 250v Midcom* 671 8005 IN4004 diode data sheet
    Text: 73K324L CCITT V.22bis, V.22, V.21, V.23, Bell 212A Single-Chip Modem TDK SEMICONDUCTOR CORP. June 2001 DESCRIPTION FEATURES The 73K324L is a highly integrated single-chip modem IC which provides the functions needed to design a Quad-mode CCITT and Bell 212A


    Original     		PDF 73K324L 22bis, 73K324L 73K224 671-8005 QAM FSK demodulator v250l20 intel 8039 C 12 PH Zener diode circuit diagram of calling bell free datasheet of lm 1458 tdk cd y1 250v Midcom* 671 8005 IN4004 diode data sheet

    Untitled

    Abstract: No abstract text available
    Text: 73K324L CCITT V.22bis,V.23,V.22,V.21,Bell 212A Single-Chip Modem DATA SHEET JULY 2005 DESCRIPTION FEATURES The 73K324L is a highly integrated single-chip modem IC, which provides the functions, needed to design a Quad-mode CCITT and Bell 212A compatible modem capable of operation over dial-up


    Original     		PDF 73K324L 22bis 73K324L 73K224 22bis,

    73K324L-28IH/F

    Abstract: 321L 73K212AL 73K324L 80C51 One-chip telephone IC 4 QAM modulator demodulator circuitry fsk tone encoder
    Text: 73K324L CCITT V.22bis,V.23,V.22,V.21,Bell 212A Single-Chip Modem Simplifying System Integration DATA SHEET JUNE 2008 DESCRIPTION FEATURES The 73K324L is a highly integrated single-chip modem IC, which provides the functions, needed to design a Quad-mode CCITT and Bell 212A


    Original     		PDF 73K324L 22bis 73K324L 73K224 22bis, 73K324L-28IH/F 321L 73K212AL 80C51 One-chip telephone IC 4 QAM modulator demodulator circuitry fsk tone encoder

    rj48_con

    Abstract: 5B1 package SMD 11D4 pc motherboard schematics 11B7 5A6 t smd
    Text: DS21352DK T1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21352 design kit is an easy-to-use evaluation board for the DS21352 T1 single-chip transceiver SCT . The DS21352DK is intended to be used as a


    Original     		PDF DS21352DK DS21352 DK2000 DK101 DK101/DK2000 DS21352DK rj48_con 5B1 package SMD 11D4 pc motherboard schematics 11B7 5A6 t smd

    PTB 00 ATEX 3117

    Abstract: GHG43 EX-88 Ex-87 PTB 99 ATEX 3117 PTB No. Ex-87.B.2016U crouse-hinds 10 GHG432 ATEX 3117 ddto
    Text: 4C GHG43 Series Control Stations Nonmetallic or 316L Stainless Steel Corrosion Resistant UL/cUL listed Cl. I, Div. 2, Groups A, B, C, D Cl. I, Zones 1 and 2, A Ex de IIB + H2 T6 Cl. II, Div. 1, Groups E, F, G (cUL) PTB ATEX CERTIFIED 3117 Ex de IIC, T6,


    Original     		PDF GHG43 PTB 00 ATEX 3117 EX-88 Ex-87 PTB 99 ATEX 3117 PTB No. Ex-87.B.2016U crouse-hinds 10 GHG432 ATEX 3117 ddto

    5A6 smd

    Abstract: 10uF 160v Transistor 8c4 6c2 diode 9A4 SMD SMD 6c6 TANTALUM SMD CAPACITOR CROSS-REFERENCES Transistor 6C5 DK101 DK2000
    Text: DS21354DK E1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21354 design kit is an easy-to-use evaluation board for the DS21354 E1 single-chip transceiver SCT . The DS21354DK is intended to be used as a


    Original     		PDF DS21354DK DS21354 DS21354DK DK2000 DK101 DK101/DK2000 IDTQS3R861 5A6 smd 10uF 160v Transistor 8c4 6c2 diode 9A4 SMD SMD 6c6 TANTALUM SMD CAPACITOR CROSS-REFERENCES Transistor 6C5 DK101

    5A6 smd

    Abstract: 4C6 SPECIFICATIONS 11d4 Transistor 8c4 smd 8c7 5a7 02 11d5 XC95144XL-10TQ100c DK101 DS18
    Text: DS21352DK T1 Single-Chip Transceiver Design Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS21352 design kit is an easy-to-use evaluation board for the DS21352 T1 single-chip transceiver SCT . The DS21352DK is intended to be used as a


    Original     		PDF DS21352DK DS21352 DS21352DK DK2000 DK101 DK101/DK2000 IDTQS3R861 5A6 smd 4C6 SPECIFICATIONS 11d4 Transistor 8c4 smd 8c7 5a7 02 11d5 XC95144XL-10TQ100c DK101 DS18

    PTB 00 ATEX 3117

    Abstract: PTB No. Ex-87.B.2016U PTB 99 ATEX 3117 ATEX 3117 PTB 99 ATEX 1007U Power cable 25mm2 EX-88 GHG43 n608 LM 3117
    Text: 2: 5: SYS19: BASE2 PDFINFO 50: 95: 98: JOB: CRMAIN06-0601-3 Name: N-601 100: DATE: JAN 19 2006 Time: 5:37:08 PM Operator: RB COLOR: CMYK UL/cUL listed Cl. I, Div. 2, Groups A, B, C, D Cl. I, Zones 1 and 2, A Ex de IIB + H2 T6 Cl. II, Div. 1, Groups E, F, G (cUL)


    Original     		PDF SYS19: CRMAIN06-0601-3 N-601 66008com CRMAIN06-0610-1 N-610 PTB 00 ATEX 3117 PTB No. Ex-87.B.2016U PTB 99 ATEX 3117 ATEX 3117 PTB 99 ATEX 1007U Power cable 25mm2 EX-88 GHG43 n608 LM 3117

    5A6 smd

    Abstract: smd 5b1 9A4 smd transistor Transistor 8c4 smd 3D5 3 PIN 11d4 Teccor Electronics a6 DK101 DK2000 DS2155DK
    Text: DS2155DK/DS2156DK T1/E1/J1 Single-Chip Transceiver Design Kit Daughter Cards www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS2155/DS2156 design kits are evaluation boards for the DS2155 and DS2156. The DS2155/DS2156 design kits are intended to be used


    Original     		PDF DS2155DK/DS2156DK DS2155/DS2156 DS2155 DS2156. DK2000 DK101 DK2000 DS2156 5A6 smd smd 5b1 9A4 smd transistor Transistor 8c4 smd 3D5 3 PIN 11d4 Teccor Electronics a6 DS2155DK

    IRF624A

    Abstract: No abstract text available
    Text: IRF624A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 1 .1 Q 4 .1 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10nA(M ax.) @ V DS = 250V


    OCR Scan     		PDF IRF624A 742fi IRF624A

    Untitled

    Abstract: No abstract text available
    Text: IRFW/I624A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .1 A lD = ♦ Improved Gate Charge 1 .1 Î 2 ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFW/I624A

    Power MOSFET 50V 10A

    Abstract: 108D IRFP254A
    Text: IRFP254A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFP254A Power MOSFET 50V 10A 108D IRFP254A

    IRF654A

    Abstract: 108D
    Text: IRF654A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF654A O-220 IRF654A 108D

    108D

    Abstract: IRFP254
    Text: IRFP254 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 25 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFP254 108D IRFP254

    IRF654

    Abstract: 108D
    Text: IRF654 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRF654 O-220 IRF654 108D

    IRFP244

    Abstract: nrf d
    Text: IRFP244 A dvanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .2 8 Î2 dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 16 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFP244 IRFP244 nrf d

    07278

    Abstract: BAF1-3RN2X-LH MAY94
    Text: CATALOG MI CRO SWITCH I luii'Ci *» «Ml 1*0« 0*»*»T i j | | LriJ LISTING B A F 1-3R N 2X -L H SWITCH - ENCLOSED F ED . MFR. CODE 9 1 9 2 9 X CM z .5 9 0 1 .030 — oe Ï GASKET TYPE SEAL BETWEEN COVER AND HOUStNC .530 ¿ .0 3 0 - H ÜL < R O LLER L E V E R IS SHOWN IN IT S


    OCR Scan     		PDF PR-673 CO-3000-B I54380B C054997Ã 7TI79-E c081513B 030-H 480VAC 125VAC, 2HP25DVAC 07278 BAF1-3RN2X-LH MAY94

    Untitled

    Abstract: No abstract text available
    Text: IRFW/I830A A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .5 A lD = ♦ Improved Gate Charge 1 .5 Î 2 ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFW/I830A

    IRF830S

    Abstract: No abstract text available
    Text: IRF830S A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 4 .5 A lD = ♦ Improved Gate Charge 1 .5 Î 2 ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRF830S IRF830S