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    SCHOTTKY DIODE MARKING C3 Search Results

    SCHOTTKY DIODE MARKING C3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY DIODE MARKING C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CD731

    Abstract: marking 6l "SMD PACKAGE" smd diode So SMD PACKAGE INDIA
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE CD731 SOT23 - 6L Formed SMD Package MARKING CD731 = C3S dot on pin 1 Schottky Barrier Diode (set of three) ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) - specification per diode


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    PDF CD731 C-120 CD731Rev 130804E CD731 marking 6l "SMD PACKAGE" smd diode So SMD PACKAGE INDIA

    VPS05178

    Abstract: marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode
    Text: BAT 14-099R Silicon Crossover Ring Quad Schottky Diode 3 • Medium barrier diode for double balanced mixer, phase detectors and modulators 4 2 1 4 VPS05178 3 1 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF 14-099R VPS05178 EHA07012 OT-143 EHD07089 EHD07090 Oct-07-1999 VPS05178 marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode

    A4 marking diode

    Abstract: VPS05178 sot-143 s6s diode marking a4 4C3 diode 15-099R
    Text: BAT 15-099R Silicon Crossover Ring Quad Schottky Diode 3 • Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF 15-099R VPS05178 EHA07012 OT-143 EHD07077 EHD07078 Oct-07-1999 A4 marking diode VPS05178 sot-143 s6s diode marking a4 4C3 diode 15-099R

    4C3 diode

    Abstract: Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3
    Text: BAT15-099R Silicon Crossover Ring Quad Schottky Diode 3  Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099R


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    PDF BAT15-099R VPS05178 EHA07012 OT143 EHD07077 15-099R Jul-31-2001 4C3 diode Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3

    BAT62-08S

    Abstract: VPS05604
    Text: BAT62-08S Silicon Schottky Diode Array Preliminary data 4  Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604


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    PDF BAT62-08S OT-363 VPS05604 EHA07193 EHA07291 OT363 EHD07061 900MHz EHD07063 BAT62-08S VPS05604

    marking code 62 3 pin diode

    Abstract: No abstract text available
    Text: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3


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    PDF 62-08S OT-363 VPS05604 EHA07193 EHA07291 62-08S Q62702-A1343 OT-363 D07060 EHD07061 marking code 62 3 pin diode

    Marking w1s sot

    Abstract: VPS05604 Device Marking A3 top marking c3 MARKING w1s sot363
    Text: BAS 70-08S Silicon Schottky Diode Array  General-purpose diode for high-speed switching 4  Circuit protection 5 6  Voltage clamping  High-level detecting and mixing Tape loading orientation 2 Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


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    PDF 70-08S OT-363 VPS05604 EHA07193 EHA07291 OT-363 EHB00042 EHB00043 EHB00044 Marking w1s sot VPS05604 Device Marking A3 top marking c3 MARKING w1s sot363

    Untitled

    Abstract: No abstract text available
    Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 • For high-speed switching applications 6 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


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    PDF 68-08S OT-363 VPS05604 EHA07193 EHA07291 68-08S Q62702-A1344 OT-363 EHD07102 EHD07103

    VPS05604

    Abstract: CC140 marking 68 Marking w1s sot 1c36 sot-36
    Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4 • For mixer applications in the VHF / UHF range 5 6 • For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


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    PDF 68-08S OT-363 VPS05604 EHA07193 EHA07291 OT-363 EHD07102 EHD07103 Oct-07-1999 VPS05604 CC140 marking 68 Marking w1s sot 1c36 sot-36

    Untitled

    Abstract: No abstract text available
    Text: BAT 68-08S Silicon Schottky Diode Array Preliminary data 4  For mixer applications in the VHF / UHF range 5 6  For high-speed switching applications Tape loading orientation Top View 654 2 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


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    PDF 68-08S OT-363 VPS05604 EHA07193 EHA07291 OT-363 EHD07102 EHD07103 Oct-07-1999

    Untitled

    Abstract: No abstract text available
    Text: BAT68-08S 4 Silicon Schottky Diode Array 5 6  For mixer application in the VHF/UHF range  For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


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    PDF BAT68-08S VPS05604 OT-363 EHA07193 EHA07291 OT363 EHD07102 Jan-28-2002

    BAT68-08S

    Abstract: VPS05604 diode array MARKING A3
    Text: BAT68-08S 4 Silicon Schottky Diode Array 5 6 Preliminary data  For mixer application in the VHF/UHF range  For high-speed switching applications 2 3 1 VPS05604 Tape loading orientation Top View 6 5 4 Marking on SOT-363 package for example W1s corresponds to pin 1 of device


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    PDF BAT68-08S VPS05604 OT-363 EHA07193 EHA07291 OT363 EHD07102 Jul-30-2001 BAT68-08S VPS05604 diode array MARKING A3

    smd diode L43

    Abstract: smd diode L44 l44 smd marking code smd diode code l4 smd diode L42 DIODE marking L4 marking L44 SOT23 L43 SMD SMD DIODE L4 L43 DIODE
    Text: Spec. No. : C302N3-H Issued Date : 2003.04.14 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.


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    PDF C302N3-H BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 OT-23 BAT54 BAT54A BAT54C OT-23 BAT54S UL94V-0 smd diode L43 smd diode L44 l44 smd marking code smd diode code l4 smd diode L42 DIODE marking L4 marking L44 SOT23 L43 SMD SMD DIODE L4 L43 DIODE

    SMD LD3

    Abstract: marking code LD3 DIODE SMD MARKING 5C JV3 diode A2 DIODE SMD CODE MARKING smd diode marking code jv3 SMD jv3 marking code a2 SMD diode jv3 Marking smd diode marking code a2
    Text: Spec. No. : C302N3-L Issued Date : 2003.04.14 Revised Date : 2005.11.08 Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.


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    PDF C302N3-L BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 OT-23 BAT54 BAT54A BAT54C OT-23 BAT54S UL94V-0 SMD LD3 marking code LD3 DIODE SMD MARKING 5C JV3 diode A2 DIODE SMD CODE MARKING smd diode marking code jv3 SMD jv3 marking code a2 SMD diode jv3 Marking smd diode marking code a2

    Untitled

    Abstract: No abstract text available
    Text: C3D06065E VRRM = 650650 VRRM V V Silicon Carbide Schottky Diode IF ITF;C=135˚C = 9.5 TC<135˚C 8.6AA Z-Rec Rectifier Qc Qc = 15 nC = nC Features • • • • • • • Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage


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    PDF C3D06065E 650-Volt O-252-2 C3D06065E

    Untitled

    Abstract: No abstract text available
    Text: C3D08065E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 12 A Z-Rec Rectifier Qc Features • • • • • • • 650 V = 20 nC Package 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation


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    PDF C3D08065E 650-Volt O-252-2 C3D08065E

    C3D04060E

    Abstract: CREE C3D04060
    Text: C3D04060E–Silicon Carbide Schottky Diode Z-REC RECTIFIER VRRM = 600 V IF =4A TC < 160 °C Qc Features • • • • • • • • = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current


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    PDF C3D04060E 600-Volt O-252-2 C3D04060E C3D04060 CREE C3D04060

    C3D10065I

    Abstract: No abstract text available
    Text: C3D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier IF; 10 A TC<125˚C= = 25 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior


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    PDF C3D10065I 650-Volt O-220-2 C3D10065I

    Untitled

    Abstract: No abstract text available
    Text: C3D10065I VRRM = Silicon Carbide Schottky Diode IF TC=125˚C = 10 A Z-Rec Rectifier Qc Features • • • • • • = 25 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation


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    PDF C3D10065I 650-Volt C3D10065I

    Untitled

    Abstract: No abstract text available
    Text: C3D08065I VRRM = Silicon Carbide Schottky Diode IF TC=125˚C = 8 A Z-Rec Rectifier Qc Features • • • • • • 650 V = 21 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation


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    PDF C3D08065I 650-Volt C3D08065I

    C3D04060A

    Abstract: CREE C3D04060 c3d04060
    Text: C3D04060A–Silicon Carbide Schottky Diode VRRM Z-REC RECTIFIER IF AVG = 4 A = 600 V (TC < 160°C) Qc Features • • • • • • • • = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current


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    PDF C3D04060A 600-Volt O-220-2 C3D04060A C3D04060 CREE C3D04060 c3d04060

    SCHOTTKY DIODE SOT-143

    Abstract: diode marking 74 schottky marking code PD
    Text: Central Sem iconductor Corp. DESCRIPTION The CENTRAL SEMICONDUCTOR CMFSH-3i type is a Silicon Dual Isolated Schottky diode designed for surface mount fast switching appIications requ iring a low forward vo Itage drop. Marking Code is C3l. MAXIMUM RATINGS TA=25°C


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    PDF OT-143 100mA 350SYMBOL SCHOTTKY DIODE SOT-143 diode marking 74 schottky marking code PD

    a-316

    Abstract: code diode transient ERA82-004 CV marking code diode transient A316 a316 j
    Text: ERA82-004 o.6A i Outline Drawings SCHOTTKY BARRIER DIODE I Features • 1&VF IS t]\ : Marking Low VF *3 7 Super high speed sw itchin g. • - a —K : C3 Color code •W h ite fI*H4 tEflE? 5 * Voltage class High reliability by planer design. • ffi'J ' & O f t


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    PDF ERA82-004 a-316 code diode transient CV marking code diode transient A316 a316 j

    CV marking code diode transient

    Abstract: ERA82-004 a316 j
    Text: ERA82-004 o.6A i Outline Drawings SCHOTTKY BARRIER DIODE I Features • 1&VF I S t]\ : Marking Low VF *3 7 Super high speed sw itchin g. • - a —K : C3 Color code •W h ite fI*H4 tEflE? 5 * Voltage class High reliability by planer design. • ffi'J ' & O f t


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    PDF ERA82-004 CV marking code diode transient a316 j