GaAs MMIC ESD, Die Attach and Bonding Guidelines
Abstract: all diode List Die Attach and Bonding Guidelines diode PN diode specifications Schottky schottky diode application die bonding DIODE 255 diode all
Text: HSCH-9401 GaAs Schottky Diode Data Sheet Description The HSCH-9401 is a discrete Schottky barrier diode fabricated with the Schottky Barrier Integrated Diode SBID process. Features • fC >800 GHz Applications The HSCH-9401 is a general purpose millimeter wave
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HSCH-9401
HSCH-9401
5988-4416E
5988-6154EN
GaAs MMIC ESD, Die Attach and Bonding Guidelines
all diode List
Die Attach and Bonding Guidelines
diode
PN diode specifications
Schottky
schottky diode application
die bonding
DIODE 255
diode all
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CHM1193
Abstract: k-band gaas schottky diode
Text: CHM1193 K-Band Mixer GaAs Monolithic Microwave IC Description The CHM1193 is a balanced Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the Schottky diode process : 1 µm Schottky
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CHM1193
CHM1193
CHM1192.
DSCHM11930077
17-Mar-00
k-band gaas schottky diode
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SAS diode
Abstract: high frequency diode BES100 "high frequency Diode"
Text: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN
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BES100
DSBES1008120
SAS diode
high frequency diode
BES100
"high frequency Diode"
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SAS diode
Abstract: "high frequency Diode" high frequency diode Monolithic System Technology BES100
Text: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications a Description - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN
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BES100
DSBES1008120
SAS diode
"high frequency Diode"
high frequency diode
Monolithic System Technology
BES100
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MA4E2038
Abstract: handling of beam lead diodes police radar detector M541
Text: Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038 MA4E2038 Millimeter Wave GaAs Beam Lead Schottky Barrier Diode 1,2 Package Outlines Features • • • • • Low Series Resistance Low Capacitance High Cut off Frequency Silicon Nitride Passivation
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MA4E2038
MA4E2038
handling of beam lead diodes
police radar detector
M541
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DIODE DATABOOK
Abstract: NJX3505
Text: NJX3505 GaAs SCHOTTKY BARRIER DIODE nGENERAL DESCRIPTION NJX3505 is a GaAs schottky barrier diode with very low terminal capacitance. It is utilized for mixer and detector up to SHF band. That adopts the ceramic package, and suited for waveguide mounting.
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NJX3505
NJX3505
DIODE DATABOOK
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60GHz mixer
Abstract: Schottky Barrier Diode KBM-N56 Microwave GaAs schottky Diode mixer KBM-N56-2 60Ghz harmonic mixer schottky diode circuit symbol 60GHz transistor KBM-N56-1 Microwave schottky Diode mixer
Text: Schottky Barrier Diode GaAs KBM-N56-2 DIMENSIONS (Unit : um) KBM-N56-2 is a GaAs flip chip anti-parallel pair Schottky diode designed for use as harmonic mixer element at microwave and millimeterwave frequencies. Their high cut-off frequency insures good performance
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KBM-N56-2
KBM-N56-2
100GHz.
30GHz
60GHz
KBM-N56-1
60GHz mixer
Schottky Barrier Diode KBM-N56
Microwave GaAs schottky Diode mixer
harmonic mixer
schottky diode circuit symbol
60GHz transistor
Microwave schottky Diode mixer
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njx3560
Abstract: NJX3561
Text: NJX3560/61 SCHOTTKY BARRIER DIODE nGENERAL DESCRIPTION NJX3560/3561 is a GaAs schottky barrier diode with very low terminal capacitance. It is utilized for mixer and detector up to SHF band. It is adopted a very small surface-mount plastic package. NJX3560
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NJX3560/61
NJX3560/3561
NJX3560
NJX3561
NJX3560)
NJX3561)
njx3560
NJX3561
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DIODE DATABOOK
Abstract: NJX3560 NJX3561
Text: NJX3560/61 SCHOTTKY BARRIER DIODE nGENERAL DESCRIPTION NJX3560/3561 is a GaAs schottky barrier diode with very low terminal capacitance. It is utilized for mixer and detector up to SHF band. It is adopted a very small surface-mount plastic package. NJX3560
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NJX3560/61
NJX3560/3561
NJX3560
NJX3561
NJX3560)
NJX3561)
DIODE DATABOOK
NJX3560
NJX3561
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diode hp 2835 schottky
Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship
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5082-2835 diode
Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship
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Untitled
Abstract: No abstract text available
Text: CHM2179a W-band Mixer GaAs Monolithic Microwave IC Description LO RF The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via
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CHM2179a
CHM2179a
100MHz
DSCH21790192
22-Jun-00
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KBM-N56-1
Abstract: 30GHz diode 60GHz mixer 60Ghz 60GHz transistor schottky diode circuit symbol
Text: Schottky Barrier Diode GaAs KBM-N56-1 DIMENSIONS (Unit : um) KBM-N56-1 is a GaAs flip chip Schottky diode which is designed for use as mixer and detector elements at microwave and millimeterwave frequencies. The flip chip configuration is suitable for pick and place insertion.
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KBM-N56-1
KBM-N56-1
30GHz
60GHz
30GHz diode
60GHz mixer
60GHz transistor
schottky diode circuit symbol
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nitride
Abstract: KBM-N56-1
Text: NEW PRODUCT GaAs Flip Chip Schottky Diodes KBM-N56-1 Description This KBM-N56-1 is a GaAs flip chip Schottky diode which is designed for use as mixer and detector elements at microwave and millimeter wave frequencies. The diode are fully passivated with silicon nitride for
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KBM-N56-1)
KBM-N56-1
nitride
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SMGS11
Abstract: METELICS DETECTOR DIODE A 0503 Microwave detector diodes SMSG11 J-STD-20C
Text: SMGS11 GaAs Schottky Diodes 1 1 2 2 PIN FUNCTION 1 ANODE 2 CATHODE 0503 Molded Plastic DFN Package Description Features The SMGS11 is a GaAs Schottky diode in a molded plastic DFN package. It is designed for broadband detector and single diode mixer. It is in single
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SMGS11
SMGS11
A17106
METELICS DETECTOR DIODE
A 0503
Microwave detector diodes
SMSG11
J-STD-20C
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Untitled
Abstract: No abstract text available
Text: SMGS11 GaAs Schottky Diodes 1 1 2 2 PIN FUNCTION 1 ANODE 2 CATHODE 0503 Molded Plastic DFN Package Description Features The SMGS11 is a GaAs Schottky diode in a molded plastic DFN package. It is designed for broadband detector and single diode mixer. It is in single
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SMGS11
SMGS11
A17106
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dual diode mixer
Abstract: Q62702-D1354
Text: Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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14-077D
EHT09236
Q62702-D1354
14-077D
EHT09237
dual diode mixer
Q62702-D1354
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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Untitled
Abstract: No abstract text available
Text: TABLE OF CONTENTS INDEX. SWITCHES GaAs MMIC, PIN Diode, Schottky Diode, Relay . DIGITAL ATTENUATORS.
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EL36
Abstract: ND5052-3G
Text: X TO K*BAND GaAs SCHOTTKY BARRIER MIXER DIODE FEATURES OUTLINE DIMENSIONS Untutnmm • X BAND MIXgR DIODE OUTLINE 3 6 • LOW NOISE GaAs SCHOTTKY DIODE NF = 5 dB TYP at I » 10 GHz • LOW TERMINAL CAPACITANCE C i =* 0.3 pF MAX at 1 M Hi • SMALL SIZE • LOW COST
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ND5052-3G
ND5052-3G
EL36
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Untitled
Abstract: No abstract text available
Text: 37bflS22 GGlflMbD 375 « P L S B 5Ë GEC P L E S S E Y SEMICONDUCTORS DS3 724-2.2 DC1346/46M/46S MILLIMETRE WAVE GaAs SCHOTTKY BARRIER BEAM LEAD MIXER DIODE The DC1346 GaAs Schottky Barrier Beam Lead Diode is manufactured using advanced epitaxial techniques. The
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37bflS22
DC1346/46M/46S
DC1346
30GHz
100GHz
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DC1346
Abstract: No abstract text available
Text: PSM G E C P L E S S E Y DS3724-2.2 DC1346/46M/46S MILLIMETRE WAVE GaAs SCHOTTKY BARRIER BEAM LEAD MIXER DIODE The DC1346 GaAs Schottky Barrier Beam Lead Diode is manufactured using advanced epitaxial techniques. The Beam Leads are fabricated using a gold electroplating
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DS3724-2
DC1346/46M/46S
DC1346
30GHz
100GHz
100pm
150pm
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330 marking diode
Abstract: No abstract text available
Text: Infineon icil'inciogiss Silicon Single Flip Chip Schottky Diode BAT 14-077S Preliminary Data Sheet • ♦ Single Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
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14-077S
EHT09238
Q62702-D1353
EHT09239
330 marking diode
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1t377
Abstract: Schottky Barrier Diode
Text: 8382383 77C 0 0 2 6 2 SONY CORP/COMPONENT PRODS D T -Q l-Q H 1T377 GaAs Schottky Barrier Diode Description: The 1T377 is a low noise GaAs Schottky barrier diode designed for mixer applications up to the Ku-band. Plastic mold packaging has been adopted to reduce cost.
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1T377
1T377
12GHz
Schottky Barrier Diode
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