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    SCHOTTKY BARRIER RECTIFIERS S4 Search Results

    SCHOTTKY BARRIER RECTIFIERS S4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY BARRIER RECTIFIERS S4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AV2040

    Abstract: S40D100 S40D90 IR V 2238 2238 ir
    Text: MOSPEC S40D90 Thru S40D100 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S40D90 S40D100 AV2040 S40D100 IR V 2238 2238 ir

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC S40D90C Thru S40D100C Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S40D90C S40D100C

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC S40D30 Thru S40D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S40D30 S40D60 S40D40-S40D45 S40D50-S40D60 125oC S40D30-S40D45

    S40D60

    Abstract: S40D S40D30
    Text: MOSPEC S40D30 Thru S40D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S40D30 S40D60 S40D40-S40D45 S40D50-S40D60 S40D30-S40D45 S40D60 S40D

    S30D40C

    Abstract: S30D40CE-S40D45CE S40D60C S30D40CE diode S30D40C S40D30CE-S40D45CE S40D60CE S40D30C 24535 L17 S30D40
    Text: MOSPEC S40D30CE Thru S40D60CE Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S40D30CE S40D60CE S30D40CE-S40D45CE S40D50CE-S40D60CE S40D30CE-S40D45CE S30D40C S30D40CE-S40D45CE S40D60C S30D40CE diode S30D40C S40D30CE-S40D45CE S40D60CE S40D30C 24535 L17 S30D40

    IR V 2238

    Abstract: S40D100CE S40D90CE
    Text: MOSPEC S40D90CE Thru S40D100CE Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S40D90CE S40D100CE Flammability15 IR V 2238 S40D100CE

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC S40D30 Thru S40D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S40D30 S40D60 S30D40-S40D45 S40D50-S40D60 S40D30-S40D45

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S40D90C S40D100C

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original     		PDF S40D30 S40D60

    SOD323 diode schottky code marking 37

    Abstract: MARKING CODE S5
    Text: WILLAS FM120-M+ SD103xWS THRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline SCHOTTKY BARRIER DIODE Features FEATURES • Batch process design, excellent power dissipation offers


    Original     		PDF OD-323 FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH FM120-M SOD323 diode schottky code marking 37 MARKING CODE S5

    130T specification

    Abstract: SM marking code marking code SM diode SM120T SOD-123T 1100T MARKING code S4 marking code Sm marking sm 120T
    Text: SM120T~SM1100T 20V to 100 V 1.0 Amp Surface Mount Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies and halogen-free SOD-123T FEATURES       Schottky barrier rectifier Guardring protection


    Original     		PDF SM120T SM1100T OD-123T OD-123T 03-Jan-2011 130T specification SM marking code marking code SM diode SOD-123T 1100T MARKING code S4 marking code Sm marking sm 120T

    smd schottky diode s4 SOD-123

    Abstract: smd Schottky diode sod-123 marking code 220 schottky diode sod-123 marking code 1M smd schottky diode s6 33 smd schottky diode marking s6 Recovery Glass Passivated sod-123 DIODE SMD MARKING CODE S8 smd schottky diode s4 56 smd schottky diode marking s4 smd schottky diode marking s5
    Text: WILLAS FM120-M+ SFM11-M THRU THRU 1.0A SUFRACE MOUNT SUPER FAST RECTIFIERS - 50-600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123-L SOD-123+PACKAGE PACKAGE Package outline Features Features MCC FM1200-M+ SFM18-M Pb Free Product • Batch process design, excellent power dissipation offers


    Original     		PDF 0-600V -123-L+ OD-123 RS-481-A smd schottky diode s4 SOD-123 smd Schottky diode sod-123 marking code 220 schottky diode sod-123 marking code 1M smd schottky diode s6 33 smd schottky diode marking s6 Recovery Glass Passivated sod-123 DIODE SMD MARKING CODE S8 smd schottky diode s4 56 smd schottky diode marking s4 smd schottky diode marking s5

    SS26A

    Abstract: marking code s6a SCHOTTKY diode s4A SS22A SS23A SS24A SS25A
    Text: BL GALAXY ELECTRICAL SS22A - SS26A REVERSE VOLTAGE: 20 - 60 V CURRENT: 2.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES DO - 214AC SMA Plastic package has Underwriters Laboratory 111 Flammability Classification 94V-0 For surface mounted applications


    Original     		PDF SS22A SS26A 214AC oC/10 DO-214AC 150OC SS22A-SS24A SS25A-SS26A SS26A marking code s6a SCHOTTKY diode s4A SS23A SS24A SS25A

    Untitled

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL SX5817- SX5819 VOLTAGE RANGE: 20 - 40 V CURRENT: 1.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability


    Original     		PDF SX5817--- SX5819 OD-123FL OD-123FL STD-202 50mVp-p

    SS56C

    Abstract: SS53C SS52C SS54C SS55C
    Text: BL GALAXY ELECTRICAL SS52C- - -SS56C REVERSE VOLTAGE: 20 - 60 V CURRENT: 5.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES DO - 214AB SMC ◇ Plastic package has Underwriters Laborator 111 Flammability Classification 94V-0 ◇ For surface mounted applications


    Original     		PDF SS52C- -SS56C 214AB 250oC/10 SS52C-SS54C SS55C-SS56C SS56C SS53C SS52C SS54C SS55C

    SS53C

    Abstract: SS54C SS55C SS52C Schottky Rectifiers S3C marking
    Text: BL GALAXY ELECTRICAL SS52C-SS56C REVERSE VOLTAGE: 20 - 60 V CURRENT: 5.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES DO - 214AB SMC ◇ Plastic package has Underwriters Laborator 111 Flammability Classification 94V-0 ◇ For surface mounted applications


    Original     		PDF SS52C-SS56C 214AB 50mVp-p SS52C-SS54C SS55C-SS56C SS53C SS54C SS55C SS52C Schottky Rectifiers S3C marking

    SS35B-SS36B

    Abstract: SS36B GALAXY SS36B SS32B-SS34B SS32B SS33B SS34B
    Text: BL GALAXY ELECTRICAL SS32B - SS36B REVERSE VOLTAGE: 20 - 60 V CURRENT: 3.0 A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES DO - 214AA SMB ◇ Plastic package has Underwriters Laborator 111 Flammability Classification 94V-0 ◇ For surface mounted applications


    Original     		PDF SS32B SS36B 214AA 50mVp-p SS32B-SS34B SS35B-SS36B SS35B-SS36B SS36B GALAXY SS36B SS32B-SS34B SS33B SS34B

    1S401

    Abstract: 1S20 1S30 1S40 1S50 1S60 s6 schottky
    Text: 1S20 THRU 1S60 1.0 AMP SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction R-1 .102 2.6 .091(2.3)


    Original     		PDF MIL-STD-202, 1S401 1S20 1S30 1S40 1S50 1S60 s6 schottky

    1S401

    Abstract: 1S100 1S20 1S30 1S40 1S50 1S60 1S80
    Text: 1S20 THRU 1S100 1.0 AMP SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction R-1 .102 2.6 .091(2.3)


    Original     		PDF 1S100 MIL-STD-202, 1S401 1S100 1S20 1S30 1S40 1S50 1S60 1S80

    1S20

    Abstract: 1S30 1S40 1S50 1S60 Schottky Barrier Rectifiers S4
    Text: 1S20 THRU 1S60 VOLTAGE 20V ~ 60V 1.0AMP Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free R-1 F EATURES .102 2.6 .091(2.3) DIA. * Low forward voltage drop * High current capability


    Original     		PDF MIL-STD-202, 01-Jun-2002 1S20 1S30 1S40 1S50 1S60 Schottky Barrier Rectifiers S4

    Untitled

    Abstract: No abstract text available
    Text: 1S20 THRU 1S60 1.0 AMP SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE 20 to 100 Volts CURRENT 1.0 Ampere FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction R-1 .102 2.6 .091(2.3)


    Original     		PDF MIL-STD-202, am00us

    AV2040

    Abstract: S40D S40D30 S40D45 S40D50 S40D60
    Text: ßk MOSPEC S40D30 Thru S40D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.


    OCR Scan     		PDF S40D30 S40D60 S40D50 AV2040 S40D S40D45 S40D50 S40D60

    S40D45

    Abstract: S40D60 S40D S40D30 S40D50
    Text: EL MOSPEC S40D30 Thru S40D60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.


    OCR Scan     		PDF S40D30 S40D60 S40D50 S40D45 S40D60 S40D S40D50

    10H150CT

    Abstract: 10H150 MBR10H100CT MBR10H200CT CAAF 10H200CT MBR10H200
    Text: E TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers TO-220AB 1 vWvti/t T!T7T7- Features <• <■ <■ <■ «■ <■ Plssiic material used carries Underwriters Laboratory Classifications S4V-0 Metal silicon Junction, ma|orlty carrier conduction


    OCR Scan     		PDF MBR10H100CT MBR10H200CT O-220AB 35inm IF-10A. 12rsc 10H150CT 10H150 MBR10H200CT CAAF 10H200CT MBR10H200