Untitled
Abstract: No abstract text available
Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
|
Original
|
PDF
|
B2100
DS30021
B270-B2100
|
B2100
Abstract: B270 B280 B290
Text: SPICE MODEL: B270 B280 B290 B2100 B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak
|
Original
|
PDF
|
B2100
DS30021
B270-B2100
B2100
B270
B280
B290
|
Untitled
Abstract: No abstract text available
Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak
|
Original
|
PDF
|
B2100
MIL-STD-202,
DS30021
B270-B2100
|
B2100
Abstract: B270 B280 B290
Text: SPICE MODEL: B270 B280 B290 B2100 B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
|
Original
|
PDF
|
B2100
DS30021
B270-B2100
B2100
B270
B280
B290
|
B2100
Abstract: Diode B2x B270 B280 B290 J-STD-020A
Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER SPICE MODEL: B270 B280 B290 B2100 Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
|
Original
|
PDF
|
B2100
DS30021
B270-B2100
B2100
Diode B2x
B270
B280
B290
J-STD-020A
|
B2100
Abstract: B270 B280 B290 J-STD-020D case SMB
Text: B270 - B2100 Green 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection
|
Original
|
PDF
|
B2100
DS30021
B2100
B270
B280
B290
J-STD-020D
case SMB
|
Untitled
Abstract: No abstract text available
Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak For Use in Low Voltage, High Frequency Inverters,
|
Original
|
PDF
|
B2100
J-STD-020C
DS30021
B270-B2100
|
B2100
Abstract: B270 B280 B290
Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak
|
Original
|
PDF
|
B2100
DS30021
B270-B2100
B2100
B270
B280
B290
|
Untitled
Abstract: No abstract text available
Text: SPICE MODEL: B270 B280 B290 B2100 B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
|
Original
|
PDF
|
B2100
DS30021
B270-B2100
|
Untitled
Abstract: No abstract text available
Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER SPICE MODEL: B270 B280 B290 B2100 Features • · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency
|
Original
|
PDF
|
B2100
DS30021
B270-B2100
|
Untitled
Abstract: No abstract text available
Text: B270 - B2100 Green 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features Mechanical Data • • • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak
|
Original
|
PDF
|
B2100
J-STD-020
DS30021
|
B2100
Abstract: B270 B280 B290
Text: B270 - B2100 Green 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features Mechanical Data • • • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak
|
Original
|
PDF
|
B2100
J-STD-020
DS30021
B2100
B270
B280
B290
|
b2100
Abstract: B270 B280 B290 J-STD-020D
Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency
|
Original
|
PDF
|
B2100
J-STD-020D
DS30021
b2100
B270
B280
B290
J-STD-020D
|
Untitled
Abstract: No abstract text available
Text: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with
|
Original
|
PDF
|
MBRS2H100T3G,
NBRS2H100T3G,
MBRA2H100T3G,
NRVBA2H100T3G,
MBRS2H100/D
|
|
Untitled
Abstract: No abstract text available
Text: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with
|
Original
|
PDF
|
MBRS2H100T3G,
NBRS2H100T3G,
MBRA2H100T3G,
NRVBA2H100T3G,
A210G
MBRS2H100/D
|
SMA CASE 403D-02 footprint
Abstract: No abstract text available
Text: MBRS2H100T3G, NBRS2H100T3G, MBRA2H100T3G, NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with
|
Original
|
PDF
|
MBRS2H100T3G,
NBRS2H100T3G,
MBRA2H100T3G,
NRVBA2H100T3G,
MBRS2H100/D
SMA CASE 403D-02 footprint
|
B210G
Abstract: Schottky b210
Text: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
|
Original
|
PDF
|
MBRS2H100T3G
MBRS2H100/D
B210G
Schottky b210
|
B210G
Abstract: Schottky b210
Text: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
|
Original
|
PDF
|
MBRS2H100T3G
MBRS2H100/D
B210G
Schottky b210
|
MBRS2H100T3G
Abstract: B210G 403A-03 Schottky b210
Text: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
|
Original
|
PDF
|
MBRS2H100T3G
MBRS2H100/D
MBRS2H100T3G
B210G
403A-03
Schottky b210
|
MBRS2H100T3G
Abstract: mbrs2h100 403D A210 MBRA2H100T3G B210G SMA CASE 403D-02 footprint
Text: MBRS2H100T3G, MBRA2H100T3G Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low
|
Original
|
PDF
|
MBRS2H100T3G,
MBRA2H100T3G
403Daws
MBRS2H100/D
MBRS2H100T3G
mbrs2h100
403D
A210
MBRA2H100T3G
B210G
SMA CASE 403D-02 footprint
|
B2100
Abstract: B270 B280 B290
Text: B270 -B2100 VISHAY 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER LITEM ZI POWER SEMICONDUCTOR y Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak
|
OCR Scan
|
PDF
|
-B2100
MIL-STD-202,
300ns
DS30021
B270-B2100
B2100
B270
B280
B290
|
Untitled
Abstract: No abstract text available
Text: B270- B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 50A Peak
|
OCR Scan
|
PDF
|
B2100
DS30021
B270-B2100
|
Untitled
Abstract: No abstract text available
Text: B270 - B2100 2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency SMB Dim Surge Overload Rating to 50A Peak
|
OCR Scan
|
PDF
|
B2100
IL-STD-202,
DS30021
B270-B2100
|
IC 74187
Abstract: lt 6246 MMI 6330 74s188 ic 74s201 6301-1 prom HARRIS 8249 mmi 6331 82S2708 74S288
Text: Siginetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Cont. TYPE NO. N74S260N N74S280AN N74S287N N74S288N N74S289N DE SC R IPTIO N Dual 5 -ln p u t N O R Gate 9 -B it O dd/E ven P arity G enerator/Checker . 102 4-B it Prom -3 State? o /p
|
OCR Scan
|
PDF
|
N74S260N
55616D
N74S280AN
S5617B
N74S287N
1024-Bit
55618X
N74S288N
256-Bit
55619R
IC 74187
lt 6246
MMI 6330
74s188
ic 74s201
6301-1 prom
HARRIS 8249
mmi 6331
82S2708
74S288
|