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    SCHEMATIC OF TTL AND GATES Search Results

    SCHEMATIC OF TTL AND GATES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SCHEMATIC OF TTL AND GATES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OA41

    Abstract: LO34 on222 transistor VGFX20K lo4b OA43 OAI221 VGFX100K VGFX40K 4 BIT ADDER
    Text: VITESSE FX Family Data Sheet High Performance FX Family Gate Arrays Features • 20,000-350,000 Raw Gates, Channelless Array Architecture • Sea-of-Gates Architecture and Four Layer Metal for High Density • Array Performance - Typical gate delay: 97 ps @ 0.19 mW


    Original     		PDF MIL-STD-883 G51017-0, OA41 LO34 on222 transistor VGFX20K lo4b OA43 OAI221 VGFX100K VGFX40K 4 BIT ADDER

    the peacocks

    Abstract: aa6rv TTL to LVTTL level shifter S1L50282 S1L50000 htri S1L5177 s1l51252
    Text: DATA SHEET ASIC S1L50000 S1L50000 SERIES HIGH DENSITY GATE ARRAY Œ DESCRIPTION EPSON Electronics America, Inc.’s S1L50000 Series is a family of ultra high-speed VLSI CMOS gate array utilizing a 0.35µm “sea-of-gates” architecture. The S1L50000H products feature 5V


    Original     		PDF S1L50000 S1L50000 S1L50000H the peacocks aa6rv TTL to LVTTL level shifter S1L50282 htri S1L5177 s1l51252

    SLA5125

    Abstract: SLA5028 250160 the peacocks Epson Electronics America SLA5668 SLA5506 SLA50000H SLA50000 SLA5075
    Text: DATA SHEET ASIC SLA50000H SLA50000H SERIES HIGH DENSITY GATE ARRAY Œ DESCRIPTION EPSON Electronics America, Inc.’s SLA50000H Series is a family of ultra high-speed VLSI CMOS gate array utilizing a 0.35µm “sea-of-gates” architecture. The SLA50000H products feature 5V


    Original     		PDF SLA50000H SLA50000H SLA5125 SLA5028 250160 the peacocks Epson Electronics America SLA5668 SLA5506 SLA50000 SLA5075

    transistor nd8

    Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24
    Text: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.


    Original     		PDF ISB28000 transistor nd8 BT4R bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24

    XN2222

    Abstract: OA2222L teradyne lasar GLX120K GLX80K 800MHZ GLX15K GLX220K GLX40K ecl nand Logic Family Specifications
    Text: VITESSE Preliminary Data Sheet GLX Family High Performance Low Power GaAs Gate Arrays Features • Sea-of-Gates Core • Low-Power Macros Available • Five Array Sizes: 15K, 40K, 80K, 120K and 220K Raw Gates • Standard TTL, LVTTL, ECL, LVPECL, GTL, HSTL and LVDS I/O Compatibility


    Original     		PDF G52144-0, XN2222 OA2222L teradyne lasar GLX120K GLX80K 800MHZ GLX15K GLX220K GLX40K ecl nand Logic Family Specifications

    MM80C96

    Abstract: MM70C96 MM80C97 C1995 MM70C95 MM70C97 MM70C98 MM80C95 MM80C98 MM80C98N
    Text: MM70C95 MM80C95 MM70C97 MM80C97 TRI-STATE Hex Buffers MM70C96 MM80C96 MM70C98 MM80C98 TRI-STATE Hex Inverters General Description Features These gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and P-channel enhancement mode transistors The MM70C95 MM80C95


    Original     		PDF MM70C95 MM80C95 MM70C97 MM80C97 MM70C96 MM80C96 MM70C98 MM80C98 MM80C95 MM80C97 C1995 MM80C98 MM80C98N

    CB12000

    Abstract: cd 4847 bt8c dc to ac inverter schematic CB22000 ld3p FD11S FD3S BUT12 BUT18
    Text: CB22000 SERIES HCMOS STANDARD CELL GENERAL DESCRIPTION FEATURES 0.7 micron, double layer metal HCMOS4T process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide. 2 - input NAND ND2P delay of 0.30 ns (typ)


    Original     		PDF CB22000 CB12000 cd 4847 bt8c dc to ac inverter schematic ld3p FD11S FD3S BUT12 BUT18

    dc cdi schematic diagram

    Abstract: Ac cdi schematic diagram California Devices DM30ND cdi schematic level shifter . CMOS to TTL cdi schematic diagram cdi schematics TIL 81 transistor BC 945
    Text: •CALIFORNIA DEVICES INC b4 J CD D e | 1AEST3E 000D334 1 | 3 T-42-11^09 DLM SERIES HCMOS Gate Arrays CALIFORNIA DEVICES INC. April 1985 PRODUCT FEATURES DLM SERIES FAMILY ORGANIZATION • High performance 3 /jm silicon gate HCMOS technology, ■ From 210 to 10,152 equivalent 2-input gates.


    OCR Scan     		PDF T-42-11 D-6050 5M85/Prlnted dc cdi schematic diagram Ac cdi schematic diagram California Devices DM30ND cdi schematic level shifter . CMOS to TTL cdi schematic diagram cdi schematics TIL 81 transistor BC 945

    LBD8

    Abstract: lt08 LT016
    Text: ADV KICRO PLA /P LE /A R R A YS 13E D 1 05S7Sat. Q O a flà lt *1 I Am3530 Mixed ECL/TTL I/O Mask-Programmable Gate Array > 3 DISTINCTIVE CHARACTERISTICS GO 01 Integrated up to 410 ECL-equivalent gates in a 24-pin slim DIP , to eliminate "g lu e " logic, resulting in reduced


    OCR Scan     		PDF 05S7Sat. Am3530 24-pin Alb-WCP-15M-9/88 LBD8 lt08 LT016

    Untitled

    Abstract: No abstract text available
    Text: GATE ARRAYS Features • 0.8nm effective gate lengths 1 .Op.m drawn combined with close metal spacing provides outstanding speed/power performance • Modified channeless architecture provides higher utilization ranging from 2,600 to 130,000 usable gates


    OCR Scan     		PDF ATL10 ATL20 ATL60 ATL130 ATL260

    LT016

    Abstract: LT08 YD-350 ecu schematics AIX200 LT08C LBd8 AIX2024 COF2001
    Text: ADV faCRO PLA/PLE/ARRAYS 13E D Am353 b oas?sat, aoaasib 1 1 Mixed ECL/TTL I/O Mask-Programmable Gate Array > 3 DISTINCTIVE CHARACTERISTICS Integrated up to 410 ECL-equivalent gates in a 24-pin slim DIP , to eliminate "g lu e " logic, resulting in reduced


    OCR Scan     		PDF Atn353 24-pin AIS-WCP-15M-9/88-0 LT016 LT08 YD-350 ecu schematics AIX200 LT08C LBd8 AIX2024 COF2001

    shiftregisters

    Abstract: EP910 altera TTL library 74LS series logic gates 74LS EP1810 EP1810-45 EP610 PLE40 altera logicaps TTL library
    Text: EP1810 Y 7 \ m HIGH PERFORMANCE 4 8 MACROCELL EPLD m 10 I U FEATURES GENERAL DESCRIPTION • Erasable, User-Configurable LSI circuit capable of implementing 2100 equivalent gates of conven­ tional and custom logic. • Speed equivalent to 74LS TTL with 33 MHz clock


    OCR Scan     		PDF

    Altera EP1800

    Abstract: EP1800 JEDEC FORMAT EP1800 altera logicaps TTL library SCHEMA PA BUILT UP EP1800 LOGIC DIAGRAM ep18001
    Text: EP1800 Erasable, User-Configurable LSI circuit capable of implementing 2100 equivalent gates of conventional and custom logic. Speed equivalent to 74LS TTL with 25 MHz clock rates. “Zero Power” typically 10/jA standby . Active power of 250 mW at 5 MHz.


    OCR Scan     		PDF EP1800 Altera EP1800 EP1800 JEDEC FORMAT EP1800 altera logicaps TTL library SCHEMA PA BUILT UP EP1800 LOGIC DIAGRAM ep18001

    ns 4248

    Abstract: Toggle flip flop THREE INPUT TTL OR GATE DUAL FLIP FLOP TRISTATE
    Text: OKI PRELIMINARY SEMICONDUCTOR MSM10V0000 1.5n FLEXIBLE CELL ARRAY FAMILY GENERAL DESCRIPTION FEATURES OKI's Flexible Cell Array FCA "sea-of-gates" series is a high density gate array family which is fabricated using a high performance 1.5^ dual-layer


    OCR Scan     		PDF MSM10V0000 ns 4248 Toggle flip flop THREE INPUT TTL OR GATE DUAL FLIP FLOP TRISTATE

    Silicon npn TRANSISTOR TCNL 100

    Abstract: tcnl 100 TRANSISTOR TCNL 100 ECL IC NAND MUX4E schematic of TTL XOR Gates TSN2 tcnl transistor ic xnor XOR23
    Text: T & T MELEC I C b4E D • DOSGQEb OOlGSlfc, Preliminary Data Sheet May 1992 a TG2 ■ ATT? &t M icroelectronics a t BEST-1 Series High-Performance ECL Gate Arrays Features Description ■ 1,000 and 4,000 equivalent logic gates The BEST-1 Series High-Performance ECL Gate


    OCR Scan     		PDF 005002b 001021b Silicon npn TRANSISTOR TCNL 100 tcnl 100 TRANSISTOR TCNL 100 ECL IC NAND MUX4E schematic of TTL XOR Gates TSN2 tcnl transistor ic xnor XOR23

    MM80C96

    Abstract: MM70C96 MM80C95
    Text: MM70C95/MM80C95, MM70C97/MM80C97 TRI-STATE Hex Buffers MM70C96/MM80C96, MM70C98/MM80C98 TRI-STATE Hex Inverters General Description Features These gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and P-channel en­ hancement mode transistors. The MM70C95/MM80C95


    OCR Scan     		PDF 7/MM80C97/MM70C96/MM80C96/MM70C98/MM80C98 MM70C95/MM80C95, MM70C97/MM80C97 MM70C96/MM80C96, MM70C98/MM80C98 MM70C95/MM80C95 MM70C96/MM80C96 MM70C95/ MM80C96 MM70C96 MM80C95

    full subtractor using NOR gate for circuit diagram

    Abstract: full subtractor circuit using nor gates AX277 2 bit full adder SIGNAL PATH DESIGNER full subtractor circuit using nand gate
    Text: VITESSE SEMICONDUCT OR 30E D H '1502331 GODDeTb 5 * V T S T -M -H ! Features • VLSI Complexity: > 35,000 Gates •Very Low Power Disspation • Superior Performance: 300M Hz to 3 GHz ■High Yielding, 4 Layer Metal, VLSI Process • Choice of Operating Temperature Ranges:


    OCR Scan     		PDF VCB50K Mil-Std-883C, full subtractor using NOR gate for circuit diagram full subtractor circuit using nor gates AX277 2 bit full adder SIGNAL PATH DESIGNER full subtractor circuit using nand gate

    226R-1-5A1

    Abstract: No abstract text available
    Text: NAGNECR AFT CLASS 226 UP TO 7 AMPS SPST— NO DC INPUTS .670 Maxj AC OUTPUTS <170> jt JD62 Dia. {1.6 Typ.all pins LOW COST. COMPATIBLE WITH TTL GATES. PRINTED CIRCUIT AND PUSH-ON CONNECTOR VERSIONS. MOUNTS ON TO-3 TRANSISTOR HEATSINKS FOR ADDED CURRENT RATING.


    OCR Scan     		PDF E52197 LR41729 24-30AWG 226R-1-5A1 240VAC 500V0C 2500VAC 1010ii 226R-1-5A1

    siemens master drive circuit diagram

    Abstract: SR flip flop IC toshiba tc110g TC110G jk flip flop to d flip flop conversion SC11C1 JK flip flop IC siemens Nand gate scxc1 SR flip flop IC pin diagram
    Text: SIEM EN S ASIC Product Description SCxC1 Family CMOS Gate Arrays FEATURES • Alternate source of Toshiba TC110G family ■ Densities up to 129,000 raw gates ■ Channelless “ sea of gates” architecture ■ 1.5 firn drawn CMOS technology, scalable to 1.0 /¿m


    OCR Scan     		PDF TC110G M33S004 siemens master drive circuit diagram SR flip flop IC toshiba tc110g jk flip flop to d flip flop conversion SC11C1 JK flip flop IC siemens Nand gate scxc1 SR flip flop IC pin diagram

    Q24060

    Abstract: transistor D1303 m1-6116 Q24008
    Text: ADVANCE DEVICE SPECIFICATION Q24000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AMCC Q24000 Series of BiCM OS logic arrays is comprised of six products with densities of 760, 2160, 5760, 9072, 13,440 and 27,520 equivalent gates. The series is optimized to provide CM OS densities with


    OCR Scan     		PDF Q24000 /D1303-0790 Q24060 transistor D1303 m1-6116 Q24008

    m60013

    Abstract: M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043
    Text: A m its u b is h i CMOS GATE ARRAYS ELECTRONIC DEVICE GROUP Mitsubishi CMOS Gate Arrays INTRODUCTION Mitsubishi offers three fami­ lies of CMOS gate arrays: 1.0 /im, 1.3 /j.m, and 2.0 ji.m, with usable gates ranging from 200 to 35,000. The 1.0 and 1.3 p.m devices are


    OCR Scan     		PDF MDS-GA-11-90-RK m60013 M60016 m60011 M60014 z46n M60030 M60024 Z24N M60012 m60043

    Untitled

    Abstract: No abstract text available
    Text: > dM C C M IC R O P O W E R S T A N D A R D C E L L 3 .3 V / 5V FEATURES • Operating Frequencies Up to 2.5GHz • Up to 4,000 Internal Gates and 200 l/Os • Cell Based Architecture • 1 Micron Bipolar Process, 3 Layer Interconnect • 10Ops Equivalent Gate Delays


    OCR Scan     		PDF 10Ops

    cq24-000

    Abstract: Q24060 98l18
    Text: Sfe- -<•' m2 DEVICE SPECIFICATION SERIES BiCMOS LOGIC ARRAYS Q24000 DESCRIPTION The AMCC Q24000 Series of BiCMOS logic arrays is comprised of six products with densities ranging from 720 to 13440 equivalent gates including a structured array with a high performance Phase-Locked Loop*.


    OCR Scan     		PDF Q24000 Q24000 A7D1320-0892 755-AMCC cq24-000 Q24060 98l18

    SE529

    Abstract: NE529
    Text: NE/SE529-F,K,N DESCRIPTION FEATURES The SE/NE529 is a high speed analog volt­ age com parator which, for the first time mates state-of-the-art Schottky diode tech­ nology with the conventional linear proc­ ess. This allows simultaneous fabrication of high speed T2L gates with a precision linear


    OCR Scan     		PDF NE/SE529-F SE529/NE529 SE529 NE529