Untitled
Abstract: No abstract text available
Text: DB3X407K Silicon epitaxial planar type Unit: mm For high frequency rectification • Features Short reverse recovery time trr Low forward voltage VF Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: 3J
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DB3X407K
UL-94
DB3X407K0L
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drc2123
Abstract: dra2123
Text: Doc No. TT4-EA-11722 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2123J0L DRA2123J0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC2123J 2.9 0.4 0.16 3 • Features 1.5 2.8 Low collector-emitter saturation voltage Vce sat
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TT4-EA-11722
DRA2123J0L
DRC2123J
UL-94
drc2123
dra2123
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Untitled
Abstract: No abstract text available
Text: DB3X313F Silicon epitaxial planar type For small current rectification Unit: mm • Features Low forward voltage VF and small reverse current IR Low terminal capacitance Ct Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant
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DB3X313F
UL-94
DB2J313
DB3X313F0L
SC-59A
O-236AA/SOT-23
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14185 Revision. 3 Product Standards Zener Diode DZ3X056D0L DZ3X056D0L Silicon epitaxial planar type Unit: mm 2.9 For surge absorption circuit 0.4 0.16 3 • Features 1.5 2.8 Excellent rising characteristics of zner current Iz Low zener operating resistance Rz
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TT4-EA-14185
DZ3X056D0L
UL-94
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Untitled
Abstract: No abstract text available
Text: DB3X315E Silicon epitaxial planar type For high speed switching circuits Unit: mm • Features Short reverse recovery time trr Small reverse current IR Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: 5D
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DB3X315E
UL-94
DB3X315E0L
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-12381 Revision. 3 Product Standards Switching Diode DA3X103E0L DA3X103E0L Silicon epitaxial planar type Unit: mm For high speed switching circuits DA3J103E in Mini3 type package 2.9 0.4 0.16 3 • Features 1.5 2.8 Short reverse recovery time trr
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TT4-EA-12381
DA3X103E0L
DA3J103E
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-12493 Revision. 2 Product Standards Schottky Barrier Diode DB3X317K0L DB3X317K0L Silicon epitaxial planar type Unit: mm 2.9 For high frequency rectification 0.4 0.16 3 • Features 1.5 2.8 Low forward voltage VF Forward current Average IF(AV) = 1 A rectification is possible
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TT4-EA-12493
DB3X317K0L
UL-94
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Untitled
Abstract: No abstract text available
Text: DB3X313N Silicon epitaxial planar type For small current rectification Unit: mm • Features Low forward voltage VF and small reverse current IR Low terminal capacitance Ct Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant
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DB3X313N
UL-94
DB2J313
DB3X313N0L
SC-59A
O-236AA/SOT-23
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11717 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2114Y0L DRA2114Y0L Silicon PNP epitaxial planar type Unit: mm For digital circuits Complementary to DRC2114Y 2.9 0.4 0.16 3 • Features 1.5 2.8 Low collector-emitter saturation voltage Vce sat
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TT4-EA-11717
DRA2114Y0L
DRC2114Y
UL-94
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Untitled
Abstract: No abstract text available
Text: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)
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2SK2980
REJ03G1061-0400
ADE-208-571B)
PLSP0003ZB-A
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Untitled
Abstract: No abstract text available
Text: 2SC2620 Silicon NPN Epitaxial Planar REJ03G0704-0200 Previous ADE-208-1071 Rev.2.00 Aug.10.2005 Application VHF amplifier, Local oscillator Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Absolute Maximum Ratings
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2SC2620
REJ03G0704-0200
ADE-208-1071)
PLSP0003ZB-A
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27631
Abstract: A 27631 2 wire LT HALL SENSOR Allegro Hall-Effect ICs A3260 A3260ELHLT A3260EUA A3260LLHLT A3260LUA HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E
Text: A3260 2-Wire Chopper Stabilized Precision Hall Effect Bipolar Switch Discontinued Product These parts are no longer in production The device should not be purchased for new design applications. Samples are no longer available. Date of status change: April 28, 2007
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A3260
27631
A 27631
2 wire LT HALL SENSOR
Allegro Hall-Effect ICs
A3260
A3260ELHLT
A3260EUA
A3260LLHLT
A3260LUA
HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E
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PDTA114YEF
Abstract: PDTA114YU PDTA114Y PDTA114YE PDTA114YK PDTA114YM PDTA114YS PDTA114YT SC-75 SC-89
Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114Y series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Product data sheet Supersedes data of 2003 Sep 09 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
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PDTA114Y
R75/04/pp14
PDTA114YEF
PDTA114YU
PDTA114YE
PDTA114YK
PDTA114YM
PDTA114YS
PDTA114YT
SC-75
SC-89
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PDTC113ZU
Abstract: PDTA113Z PDTA113ZE PDTA113ZK PDTA113ZM PDTA113ZS PDTA113ZT PDTA113ZU SC-101 SC-43A
Text: PDTA113Z series PNP resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ Rev. 04 — 2 September 2009 Product data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistors. Table 1. Product overview Type number Package NPN complement
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PDTA113Z
PDTA113ZE
OT416
SC-75
PDTC113ZE
PDTA113ZK
OT346
SC-59
PDTC113ZK
PDTA113ZM
PDTC113ZU
PDTA113ZE
PDTA113ZK
PDTA113ZM
PDTA113ZS
PDTA113ZT
PDTA113ZU
SC-101
SC-43A
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BC817
Abstract: PDTB123TK PDTB123TS PDTB123TT PDTD123T PDTD123TK PDTD123TS PDTD123TT SC-43A SC-59A
Text: PDTD123T series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 02 — 21 July 2005 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors RET family. Table 1: Product overview
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PDTD123T
PDTD123TK
OT346
SC-59A
O-236
PDTB123TK
PDTD123TS
SC-43A
PDTB123TS
PDTD123TT
BC817
PDTB123TK
PDTB123TS
PDTB123TT
PDTD123TK
PDTD123TS
PDTD123TT
SC-43A
SC-59A
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TRANSISTOR SMD MARKING CODES
Abstract: BC807 PDTA323TK PDTC323TK SC-59A transistor SMD MARKING CODE MARKING CODE SMD IC
Text: PDTA323TK PNP 500 mA, 15 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 01 — 16 June 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET in a small SOT346 (SC-59A) SMD plastic package.
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PDTA323TK
OT346
SC-59A)
PDTC323TK
BC807
TRANSISTOR SMD MARKING CODES
PDTA323TK
PDTC323TK
SC-59A
transistor SMD MARKING CODE
MARKING CODE SMD IC
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14584
Abstract: PDTB123Y marking 43A sot23 BC817 PDTB123YK PDTB123YS PDTB123YT PDTD123YK PDTD123YS PDTD123YT
Text: PDTD123Y series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 12 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA NPN Resistor-Equipped Transistors RET family. Table 1: Product overview
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PDTD123Y
PDTD123YK
OT346
SC-59A
O-236
PDTB123YK
PDTD123YS
SC-43A
PDTB123YS
PDTD123YT
14584
PDTB123Y
marking 43A sot23
BC817
PDTB123YK
PDTB123YS
PDTB123YT
PDTD123YK
PDTD123YS
PDTD123YT
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HVM187WK
Abstract: SC-59A
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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HRW0202A
Abstract: SC-59A
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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HVM187S
Abstract: SC-59A
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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hitachi S17
Abstract: HRW0202A SC-59A DSA003641
Text: HRW0202A Silicon Schottky Barrier Diode for Rectifying ADE-208-209E Z Rev. 5 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
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HRW0202A
ADE-208-209E
hitachi S17
HRW0202A
SC-59A
DSA003641
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Untitled
Abstract: No abstract text available
Text: HSM113WK Silicon Schottky Barrier Diode for Battery Switch HITACHI ADE-208-025B Z Rev. 2 Features • The HSM113WK has two different (VF-IF) chips, and can change the main battery to the backup battery automatically. • MPAK package is suitable for high density surface mounting and high speed assembly.
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HSM113WK
ADE-208-025B
HSM113WK
200mA
100mA
200pF
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Untitled
Abstract: No abstract text available
Text: HSM83 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-091D Z Rev 4 Features • High reverse voltage. (VR= 250V) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.
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HSM83
ADE-208-091D
10msec.
SC-59A
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Untitled
Abstract: No abstract text available
Text: HSM88WK Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-049F Z Rev 6 Jul1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.
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HSM88WK
ADE-208-049F
Jul1998
HSM88W
400nA
SC-59A
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