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Catalog Datasheet	MFG & Type	PDF	Document Tags
SMQ Series 510 DIODE Abstract: No abstract text available Text: Hermetic Surface Mount PIN Diodes V 2.00 Features • Power Dissipation to 1 Watt • Low Loss Switching Diodes • Low Distortion Attentuator Diodes Description This series of PIN diodes is encapsulated in metal elec trode faced MELF bond packages resulting in hermeti	OCR Scan	PDF	MA4PH236 MA4PH238 MA4PH235 MA4PH237 MA4PH239 OT-23 MA4P274 MA4P278 MA4P277 MA4P275 SMQ Series 510 DIODE
Untitled Abstract: No abstract text available Text: L-Band Uplink Power Module PHA1618-45 45 Watts, 1608-1628 MHz, 85 ms Pulse, 5% Duty Features • • • • • Outline Drawing Operation 1608-1628 MHz NPN Silicon Power Transistors TTL Compatible Burst Control Duroid Circuit Board 50 Ohms Input and Output Matched	OCR Scan	PDF	PHA1618-45 Sb4220S GG01377
SW SPDT Abstract: QQD243L SW-106 SW-276 sw276pin Text: m an A M P com pany High Power GaAs SPDT Switch DC- 3 GHz SW-106, SW-276 V 2.00 SW-106 CR-5 Features Orientation Mark • +39 dBm Typ. 1 dB Compression Point, -8V Control • +65 dBm Typ. 3rd O rder Intercept, -8V Control • Insertion Loss of 0.4 dB Typical	OCR Scan	PDF	SW-106, SW-276 SW-106 QQD243L SW SPDT SW-276 sw276pin
transistor c 3206 Abstract: transistor j7 Text: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry	OCR Scan	PDF	PH0404-7EL Sb4220S 5b42205 0DQ1175 transistor c 3206 transistor j7
AT-101 Abstract: AT-101-PIN AT-101PIN Text: M < tw ¥ \ M a n A M P com pany Voltage Variable Attenuator 10 -1000 MHz FP-2 Features • 2 dB Typical Midband Minimum Attenuation • 60 dB Typical Midband Attenuation Range • 1.5:1 Typical Midband VSWR Over Entire Attenuation Range Guaranteed Specifications*	OCR Scan	PDF	AT-101 Sb4220S AT-101-PIN AT-101PIN
PH1417-200S Abstract: F 140 F140 C5 155 10 PH1417 Text: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor	OCR Scan	PDF	PH1417-200S Sb4220S DDD12L PH1417-200S F 140 F140 C5 155 10 PH1417
T039 package Abstract: UF2801KI rf power mosfet Text: M/ A- COri P H 0 4ÔE D • 5b422G5 GG0G7G1 13T ■ NAP 7" - 5 ^ UF2801KI N -C h an n e l RF Power MOSFET Features • DMOS Structure • Lower Capacitances for Broadband Operation • Lower Noise Floor • 100 MHz to 500 MHz Operation •• Common Source T 0 3 9 Package Configuration ••	OCR Scan	PDF	UF2801KI T039 package rf power mosfet