Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS0J107KBAR • User Part No : • Description : CAP,TANTAL,100㎌,6.3V,±10%,3528-19 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ②
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TCSCS0J107KBAR
2000/-0hrs
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1A476MAAR • User Part No : • Description : CAP,TANTAL,47㎌,10V,±20%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS1A476MAAR
500hours'
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS0J336MPAR • User Part No : • Description : CAP,TANTAL,33㎌,6.3V,±20%,2012-12 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS0J336MPAR
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1E155KAAR • User Part No : • Description : CAP,TANTAL,1.5㎌,25V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS1E155KAAR
2000/-0hrs
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCE0J476MAAR1000 • User Part No : • Description : CAP,TANTAL,47㎌,6.3V,±20%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ②
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TCSCE0J476MAAR1000
2000/-0hrs
10sec.
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TCSCS1A475KAAR
Abstract: TCSCS1A475
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1A475KAAR • User Part No : • Description : CAP,TANTAL,4.7㎌,10V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS1A475KAAR
2000/-0hrs
10sec.
TCSCS1A475KAAR
TCSCS1A475
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TCSCS1A106K
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1A106KAAR • User Part No : • Description : CAP,TANTAL,10㎌,10V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS1A106KAAR
2000/-0hrs
10sec.
TCSCS1A106K
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Samsung Tantalum Capacitor
Abstract: TCSCN1C105KAAR
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCN1C105KAAR • User Part No : • Description : CAP,TANTAL,1㎌,16V,±10%,3216-16 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCN1C105KAAR
2000/-0hrs
10sec.
Samsung Tantalum Capacitor
TCSCN1C105KAAR
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCS1V475KCAR • User Part No : • Description : CAP,TANTAL,4.7㎌,35V,±10%,6032-25 • Date : Aug 23, 2013 1. Samsung Part Number TC ① ① ② ③
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TCSCS1V475KCAR
2000/-0hrs
10sec.
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THSCM1C105MKAR
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : THSCM1C105MKAR • User Part No : • Description : CAP,TANTAL,1㎌,16V,±20%,1608-09 • Date : Aug 23, 2013 1. Samsung Part Number TH ① SCM ② Tantalum Capacitor
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THSCM1C105MKAR
2000/-0hrs
10sec.
THSCM1C105MKAR
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSHS0J226MPAR • User Part No : • Description : CAP,TANTAL,22㎌,6.3V,±20%,2012-12 • Last Revision Date :December.28.2009 • Date :November 16. 2009
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TCSHS0J226MPAR
Perfo150%
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSHS0G476MAAR • User Part No : • Description : CAP,TANTAL,47㎌,4V,±20%,3216-16 • Last Revision Date :December.28.2009 • Date :January 05 .2010
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TCSHS0G476MAAR
2000/-0hrs
10sec.
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION • Supplier :Samsung electro-mechanics • Product : Tantalum capacitor • Samsung P/N : TCSCE1D226MCAR0400 • User Part No : • Description : CAP,TANTAL,22㎌,20V,±20%,6032-25 • Last Revision Date :December.28.2009 • Date :Feb 14. 2006
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TCSCE1D226MCAR0400
2000/-0hrs
10sec.
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SAMSUNG VFD
Abstract: Samsung Tantalum Capacitor IN5819 diode IRF9540 application Buck Circuit S3F84A5 VLF12060 S3F84P4 IN5819 VISHAY BD1 VFD module
Text: APPLICATION NOTE S3F84A5 An LED Lighting System January 2010 Revision 0.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2010 Samsung Electronics, Inc. All Rights Reserved Important Notice The information in this publication has been carefully
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S3F84A5
S3F84P4
100uF
WSR21R000FEA
IRF9540
IN5819
VLF12060-101M1R0
SAMSUNG VFD
Samsung Tantalum Capacitor
IN5819 diode
IRF9540 application
Buck Circuit
S3F84A5
VLF12060
IN5819 VISHAY
BD1 VFD module
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30b1 diode
Abstract: ntc 10d-7 DIODE G7.9 27B2 diode 45x1 diode M30 c300 811324 q515 11F4 smd diode f4 4d
Text: This Document can not be used without Samsung’s authorization. 5 Schematic Diagrams and PCB Silkscreen 5-1 MAIN BOARD 5-1-1 Schematic Diagrams M30 5-1 5 Schematic Diagrams and PCB Silkscreen This Document can not be used without Samsung’s authorization.
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100nF,
1/16W
30b1 diode
ntc 10d-7
DIODE G7.9
27B2 diode
45x1
diode M30 c300
811324
q515
11F4
smd diode f4 4d
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its
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KM41C1000CL
KM41C1000CL
576x1
KM41C1000CL-6
110ns
KM41C1000CL-7
130ns
KM41C1000CL-8
150ns
GD1S412
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KM41C1000CLP
Abstract: KM41C1000CLJ DRAM 18DIP KM41C1000CL-6 KM41C1000CL-7 KM41C1000CL-8 Scans-001144 samsung hv capacitor
Text: SAMSUNG ELECTRONICS INC b7E T> 7RbMmH 00153^7 flS7 • CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its
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KM41C1000CL
KM41C1000CL-6
110ns
KM41C1000CL-7
130ns
KM41C1000CL-8
150ns
200fiA
cycle/64ms
256Kx4
KM41C1000CLP
KM41C1000CLJ
DRAM 18DIP
Scans-001144
samsung hv capacitor
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Untitled
Abstract: No abstract text available
Text: June 2010 RoHs+Halogen Compliant_ _ J ' ’B W4 & •« € co p arts SOLID TANTALUM CAPACITORS SAMSUNG ELECTRO-MECHANICS
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E » • TTbHlMS DD1SSSL 3bT KM44C258C SHGK CMOS DRAM 262,144x4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258C is a CMOS high speed 262,144x4 Dynamic Random Access Memory. Its de
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KM44C258C
144x4
KM44C258C
110ns
KM44C258C-7
130ns
KM44C258C-8
150ns
20-LEAD
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km44c256c
Abstract: KM44C256CL-6 KM44C256CL-7 KM44C256CL-8 CP172 KM44C256CLP-7 KM44C256CLP8
Text: SAMSUNG ELECTRONICS INC b?E » • ?cìb4]i42 DD15H77 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C256CL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its
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KM44C256CL_
DD15477
256Kx4
KM44C256CL-6
110ns
KM44C256CL-7
130ns
KM44C256CL-8
150ns
200pA
km44c256c
CP172
KM44C256CLP-7
KM44C256CLP8
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de
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KM44C1002B
KM44C1002B
576x4
KM44C1002B-6
110ns
KM44C1002B-,
130ns
KM44C1002B-8
150ns
20-LEAD
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DG113
Abstract: Samsung Capacitor sse samsung pram
Text: a KM41V4000LL «S SAMSUNG 4M x 1 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG E LECTRONI CS I NC SSE FEATURES 7 ^4 1 4 2 D D 11355 2 = 1 2 _ ISMGK GENERAL DESCRIPTION . Performance range: KM41V4000LL - 7
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KM41V4000LL
KM41V4000LL
130ns
150ns
180ns
304x1
KM41V4000/L
DG113
Samsung Capacitor sse
samsung pram
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its
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Tbm42
KM41V4000BLL
KM41V4000BLL
KM41V4000BLL-7
130ns
KM41V4000BLL-8
150ns
KM41V4000BLL-10
100ns
180ns
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 7Tb4142 0015445 33T • SNGK b7E D CMOS DRAM KM41C1002C 1,048,576x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002C is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de
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7Tb4142
KM41C1002C
KM41C1002C
KM41C1002C-6
110ns
KM41C1002C-7
130ns
KM41C1002C-8
150ns
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