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    SAMSUNG MEMORY 2048 Search Results

    SAMSUNG MEMORY 2048 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy

    SAMSUNG MEMORY 2048 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    Samsung k9f1208u

    Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
    Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.


    Original     		PDF AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory

    Untitled

    Abstract: No abstract text available
    Text: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.


    Original     		PDF K7K1636T2C K7K1618T2C 512Kx36 K7S1636T4C K7S1618T4C 1Mx18 11x15

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    SAMSUNG NAND FLASH

    Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
    Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for


    Original     		PDF AN1838 Byte/264 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits SAMSUNG NAND FLASH Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


    Original     		PDF K9K2G08U0A K9K2G08U0A-Y K9K2G08U0A-V K9K2G08U0A

    74lvc3245

    Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
    Text: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04


    Original     		PDF 128MB 0000h 0001h 0002h 12bit 16bit 74lvc3245 SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL

    samsung rfs

    Abstract: SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FTL samsung xsr SAMSUNG NAND FLASH TRANSLATION LAYER BML STL NAND XSR oneNand flash onenand xsr Flash Translation Layer
    Text: Introduction to Samsung’s Linux Flash File System - RFS Application Note November-2006, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks RFS is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.


    Original     		PDF November-2006, samsung rfs SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FTL samsung xsr SAMSUNG NAND FLASH TRANSLATION LAYER BML STL NAND XSR oneNand flash onenand xsr Flash Translation Layer

    K9F1G08

    Abstract: K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y
    Text: K9F1G08Q0A K9F1G08D0A K9F1G08U0A Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Aug. 24th. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    Original     		PDF K9F1G08Q0A K9F1G08D0A K9F1G08U0A K9F1G08Q0A-Y K9F1G08 K9F1G08U0A K9F1G08X0A K9F1G08Q0A ADD12 K9F1G08D0A-Y

    K9F4G08U0M

    Abstract: K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB
    Text: Advance FLASH MEMORY K9K8G08U1M K9F4G08U0M Document Title 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Nov. 15. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right


    Original     		PDF K9K8G08U1M K9F4G08U0M K9F4G08U0M-Y K9F4G08U0M K9F4G08U 52-ULGA 52ULGA K9K8G08U1M K9F4G08U0M-ICB0 K9F4G08 81h-10h K9F4G08U0M-YCB

    s3c2442

    Abstract: sc32442 Samsung SC32442 s3c2442 datasheet lcd stn 4096 mobile camera interface microcontroller SAMSUNG MCP "TSP Controller" ARM920T rom samsung 1Gb nand flash
    Text: Samsung SC32442 MSP Multi Stacked Package Leading-Edge Application Processor with single package incorporating Memory MCP Product Brief SC32442 MSP product is a proprietary solution provided exclusively by Samsung Electronics. SC32442 includes an S3C2442 AP


    Original     		PDF SC32442 S3C2442 ARM920T 512Mb 128MB Samsung SC32442 s3c2442 datasheet lcd stn 4096 mobile camera interface microcontroller SAMSUNG MCP "TSP Controller" ARM920T rom samsung 1Gb nand flash

    SAMSUNG DDR4

    Abstract: samsung toggle mode NAND samsung ddr3 RAM DDR2 samsung 30nm green ddr3 HS21XM ddr2 ram slots for laptop Samsung 8Gb MLC Nand flash DIMM DDR4 socket DDR3 DIMM spec samsung
    Text: Optimizing Virtualization using Advanced Memory and Storage Technology Speakers: Sylvie Kadivar, PhD, Director, DRAM Strategic Marketing, Samsung Steve Weinger, Director, Flash Marketing, Samsung 1/? No.2 for 8 years in Semiconductor Industry *Source : Gartner March 2010


    Original     		PDF 320GB SAMSUNG DDR4 samsung toggle mode NAND samsung ddr3 RAM DDR2 samsung 30nm green ddr3 HS21XM ddr2 ram slots for laptop Samsung 8Gb MLC Nand flash DIMM DDR4 socket DDR3 DIMM spec samsung

    Untitled

    Abstract: No abstract text available
    Text: KMM366F400CK1 KMM366F410CK1 DRAM MODULE KMM366F400CK1 & KMM366F410CK1 EDO Mode without buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0CK1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM366F400CK1 KMM366F410CK1 KMM366F410CK1 KMM366F40 4Mx64bits 300mil 168-pin

    samsung xsr

    Abstract: NAND XSR onenand xsr XSR Porting Guide oneNand flash samsung nand flash onenand block header samsung flash bad block mapping STL Porting Guide
    Text: XSR1.5 WEAR LEVELING Application Note May-2007, Version 1.0 Copyright Notice Copyright 2007, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks XSR is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.


    Original     		PDF May-2007, samsung xsr NAND XSR onenand xsr XSR Porting Guide oneNand flash samsung nand flash onenand block header samsung flash bad block mapping STL Porting Guide

    Untitled

    Abstract: No abstract text available
    Text: KMM366F400CK KMM366F410CK DRAM MODULE KMM366F400CK & KMM366F410CK EDO Mode without buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0CK is a 4Mx64bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM366F400CK KMM366F410CK KMM366F410CK KMM366F40 4Mx64bits 300mil 168-pin

    samsung tfs4

    Abstract: 39TB TFS4 Samsung "Flash "
    Text: TFS4 CONFIGURING CLUSTER SIZE Application Note November-2006, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks TFS4 is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.


    Original     		PDF November-2006, 128KB 256KB samsung tfs4 39TB TFS4 Samsung "Flash "

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF DD147b3 KMM594100N KMM594100N KM44C4100J 20-pin KM41C4000BJ 30-pin KMM5364100N-6

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 5 QQ152fit. 0^0 I SMGK KM M53281OOV/VG/VP DRAM MODULES 8 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5328100V is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF QQ152fit. M53281OOV/VG/VP KMM5328100V 24-pin 72-pin 22/xF KMM5328100V-6 110ns KMM532810QV-7

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7 RbM lM2 0 0 1 S 224 KMM5816100/T 343 I SM6 K DRAM MODULES 16 M x8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5816100/T is a 16M bitx8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5816100/T KMM5816100/T KM41C16000/T 24-pin 30-pin KMM5816100-6 110ns KMM5816100-7 130ns

    KMM5324100V

    Abstract: No abstract text available
    Text: KMM53241OOV/VG/VP DRAM MODULES 4M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324100V is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324100V consist of eight C M O S 4M x 4 bit


    OCR Scan     		PDF KMM53241OOV/VG/VP 110ns 130ns 150ns KMM5324100V 24-pin 72-pin 22/iF

    dram simm memory module samsung 30-pin 16M

    Abstract: 16M 30-pin SIMM
    Text: KMM5816100/T DRAM MODULES 1 6 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816100/T is a 16M bit x 8 Dynamic RAM high density memory module. The Samsung KMM5816100/T consist of eight KM41C16000J/T DRAMs


    OCR Scan     		PDF KMM5816100/T KMM5816100-6 KMM5816100-7 KMM5816100-8 110ns 130ns 150ns KMM5816100/T KM41C16000J/T dram simm memory module samsung 30-pin 16M 16M 30-pin SIMM

    dram simm memory module samsung 30-pin 16M

    Abstract: No abstract text available
    Text: KMM5916100/T DRAM MODULES 16Mx9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59161QG/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung «1^5916100^ consist of nine KM41C16100/T DRAMs in 24-pin SOJ/TSOP II packages mounted on a 30-pin


    OCR Scan     		PDF KMM5916100/T 16Mx9 KMM59161QG/T KM41C16100/T 24-pin 30-pin KMM5916100/T KMM5916100-6 KMM5916100-7 dram simm memory module samsung 30-pin 16M

    KMM5364100-7

    Abstract: Ras 1220
    Text: DRAM MODULES KMM5364100/G 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5364100 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100 consist of eight CMOS 4M x 4 bit DRAMs in 24-pin SOJ packages and four CMOS 4 M x 1 bit


    OCR Scan     		PDF KMM5364100/G KMM5364100 24-pin 20-pin 72-pin KMM5364100-6 KMM5364100-7 KMM5354100-8 Ras 1220

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53221OOCKU/CKUG KMM53221 OOCKU/CKUG with Fast Page Mode 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53221OOCKU is a 2Mx32bits RAM high density memory module. The Dynamic • Part Identification Samsung


    OCR Scan     		PDF KMM53221OOCKU/CKUG KMM53221 KMM53221OOCKU 2Mx32bits KMM5322100CKU cycles/32ms KMM5322100CKUG 28-pin