K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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Samsung K6R4008C1D
Abstract: K6R4008C1D 317 mg K6R4008V1D SAMSUNG SRAM 110e4
Text: Single Event Latch-Up Testing on Samsung Rev. D 4M Fast Asynchronous SRAM Joseph Benedetto, Ph.D. Craig Hafer 719-594-8319 [email protected] Summary—Single event latch-up SEL testing was performed on the Samsung K6R4008V1D and K6R4008C1D 3.3 and 5.0V 4M Asynchronous SRAMs (respectively) at the Texas A&M
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K6R4008V1D
K6R4008C1D
K6R4008V1D
EIA/JESD57
Samsung K6R4008C1D
317 mg
SAMSUNG SRAM
110e4
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K6X0808C1D-BF55
Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI
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CY7C128A-15VC
CY7C128A-15SC
CY7C167A-15PC
CY7C168A-15PC
24PIN
20PIN
300MIL
K6X0808C1D-BF55
HY6264P
AS6C1008-55SIN
samsung p28
K6R4016V1D-UC10
as6c4008-55sin
HYNIX
IS61LV25616AL-10KLI
GS71116AGP-10
uPD431000ACZ-70L
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K9HDG08U1A
Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-11-ALL-001
K9HDG08U1A
K9LCG08U0A
k4g10325fe-hc04
KLM2G1DEHE-B101
K9WAG08U1B-PIB0
k9gag08u0e
Ltn140at
SAMSUNG HD502HJ
hd204ui
klm2g1dehe
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CS16LV40963
Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D
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32Kx8
LY6264
LY62L64
LY62256
LY62L256
LY62256
128Kx8
64Kx16
LY621024
LY62L1024
CS16LV40963
BS62LV4006
sram cross reference
CS18LV40963
LY6264
Hynix Cross Reference
cs18lv10245
cs18lv02560
LY621024
K6X1008C2D
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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k6r4008c1d-j
Abstract: K6R4004V1D K6R4016C1D K6R4008C1D 36-SOJ-400 36-SOJ Samsung K6R4008C1D
Text: PRELIMINARY CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary
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K6R4008C1D
512Kx8
115mA
100mA
44-TSOP2-400BF
k6r4008c1d-j
K6R4004V1D
K6R4016C1D
K6R4008C1D
36-SOJ-400
36-SOJ
Samsung K6R4008C1D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Preliminary CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001
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K6R4008C1D
512Kx8
115mA
100mA
44-TSOP2-400BF
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K6R4008V1D
Abstract: K6R4016V1D-J k6r4008c1d Samsung K6R4008C1D
Text: PRELIMINARY Preliminary CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001
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K6R4008C1D
512Kx8
115mA
100mA
44-TSOP2-400BF
K6R4008V1D
K6R4016V1D-J
k6r4008c1d
Samsung K6R4008C1D
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K6R4008C1D
Abstract: K6R4004C1D-JC K6R4016V1D-J Samsung K6R4008C1D 32SOJ
Text: PRELIMINARY CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary
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K6R4008C1D
512Kx8
115mA
100mA
44-TSOP2-400BF
002MIN
K6R4008C1D
K6R4004C1D-JC
K6R4016V1D-J
Samsung K6R4008C1D
32SOJ
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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K6R4004C1D-JC
Abstract: K6R4004V1D K6R4016V1D-J
Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary
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K6R4004V1D
110mA
130mA
115mA
100mA
32-SOJ-400
K6R4004C1D-JC
K6R4004V1D
K6R4016V1D-J
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K6R4016V1D-J
Abstract: K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016
Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001
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K6R4008V1D
512Kx8
110mA
130mA
115mA
100mA
44-TSOP2-400BF
002MIN
K6R4016V1D-J
K6R4008
K6R4008V1D
K6R4004C1D-JC
K6R4016
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary
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K6R4004V1D
110mA
130mA
115mA
100mA
32-SOJ-400
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1H08S
Abstract: PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR
Text: Supervisors Cross Reference Guide Alliance Maxim/Dallas IMP ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA DS1232LP IMP1232LPEMA ASM1232LPN DS1232LP IMP1232LPN Analog Devices Micrel Microchip MIC1232N TC1232CPA - - - - - -
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ASM1232LP
DS1232LPS-2
IMP1232LP
ASM1232LPCMA
DS1232LP
IMP1232LPCMA
ASM1232LPEMA
IMP1232LPEMA
ASM1232LPN
1H08S
PI6C2405A-1HW
ASM706CUA
SOIC-6 microchip
ADM809RAR
ADM705AN
MAX809SEUR T
ASM5P2309-1H-16-S
K7N163601B
MAX810JEUR
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K6R4008V1D
Abstract: K6R4016C1D 44-TSOP2
Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary
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K6R4004V1D
110mA
130mA
115mA
100mA
32-SOJ-400
K6R4008V1D
K6R4016C1D
44-TSOP2
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K6R4016V1D-J
Abstract: No abstract text available
Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001
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K6R4004C1D
115mA
100mA
32-SOJ-400
K6R4016V1D-J
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K6R4016V1D-J
Abstract: K6R4008V1D
Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001
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K6R4008V1D
512Kx8
110mA
130mA
115mA
100mA
44-TSOP2-400BF
K6R4016V1D-J
K6R4008V1D
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K6R4004C1D
Abstract: K6R4004C1D-JC K6R4016C1D K6R4016 K6R4004
Text: PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary
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K6R4004C1D
115mA
100mA
32-SOJ-400
K6R4004C1D
K6R4004C1D-JC
K6R4016C1D
K6R4016
K6R4004
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K6R4008V1D
Abstract: 36-SOJ 44TSOP 36-SOJ-400 44-TSOP2
Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001
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K6R4008V1D
512Kx8
110mA
130mA
115mA
100mA
44-TSOP2-400BF
K6R4008V1D
36-SOJ
44TSOP
36-SOJ-400
44-TSOP2
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K6R4008
Abstract: No abstract text available
Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001
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K6R4008V1D
512Kx8
110mA
130mA
115mA
100mA
44-TSOP2-400BF
K6R4008
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K6R4016C1D
Abstract: K6R4004C1D-JC K6R4008
Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016C1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001
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K6R4016C1D
256Kx16
55/Typ.
35/Typ.
K6R4016C1D
K6R4004C1D-JC
K6R4008
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K6R4016V1D
Abstract: No abstract text available
Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.
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K6R4016V1D
256Kx16
110mA
130mA
115mA
100mA
35/Typ.
55/Typ.
K6R4016V1D
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