BGA-56P-M01
Abstract: DS05-50216-1E
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V
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DS05-50216-1E
MB84VD2108XEA-70/85/MB84VD2109XEA-70/85
56-ball
56-pin
BGA-56P-M01
DS05-50216-1E
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2228H
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50220-2E
MB84VD2118XEG-70/85/MB84VD2119XEG-70/85
56-ball
BGA-56P-M01)
MB84VD21
2228H
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Untitled
Abstract: No abstract text available
Text: MB84VD2118XEM-70 MB84VD2119XEM-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MB84VD2118XEM-70
MB84VD2119XEM-70
F0307
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sa728
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50220-2E
MB84VD2118XEG-70/85/MB84VD2119XEG-70/85
56-ball
BGA-56P-M01)
MB84VD21third
F0209
sa728
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BGA-56P-M01
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50220-3E
MB84VD2118XEG-70/85/MB84VD2119XEG-70/85
F0302
BGA-56P-M01
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50218-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XDA-85/MB84VD2119XDA-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50218-1E
MB84VD2118XDA-85/MB84VD2119XDA-85
69-ball
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Untitled
Abstract: No abstract text available
Text: MB84VD2108XEM-70 MB84VD2109XEM-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MB84VD2108XEM-70
MB84VD2109XEM-70
F0306
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MARKING HRA
Abstract: 4kw marking
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 4M (×8/×16) STATIC RAM MB84VD2118XEM-70/MB84VD2119XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance
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MB84VD2118XEM-70/MB84VD2119XEM-70
56-ball
MB84VD2118XEM/MB84VD2119XEM
MARKING HRA
4kw marking
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MARKING HRA
Abstract: SEC MCP 4kw marking
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108XEM-70/MB84VD2109XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance
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MB84VD2108XEM-70/MB84VD2109XEM-70
56-ball
MB84VD2108XEM/MB84VD2109XEM
MARKING HRA
SEC MCP
4kw marking
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BGA-56P-M02
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50307-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 4M (×8/×16) STATIC RAM MB84VD2118XEM-70/MB84VD2119XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance
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DS05-50307-1E
MB84VD2118XEM-70/MB84VD2119XEM-70
56-ball
MB84VD2118XEM/MB84VD2119XEM
F0307
BGA-56P-M02
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Untitled
Abstract: No abstract text available
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0307
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50220-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16 M (x ×8/× ×16) FLASH MEMORY & 4 M (× ×8/× ×16) STATIC RAM MB84VD2118XEG-70/85/MB84VD2119XEG-70/85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V
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DS05-50220-1E
MB84VD2118XEG-70/85/MB84VD2119XEG-70/85
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4kw marking
Abstract: sa33 Datasheet
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0306
4kw marking
sa33 Datasheet
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4kw marking
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50306-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108XEM-70/MB84VD2109XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance
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DS05-50306-1E
MB84VD2108XEM-70/MB84VD2109XEM-70
56-ball
MB84VD2108XEM/MB84VD2109XEM
F0306
4kw marking
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F8000
Abstract: c0000 AT49BV160S AT49BV160ST SA10 07FFF
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3560AS
F8000
c0000
AT49BV160S
AT49BV160ST
SA10
07FFF
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AT49BV160S
Abstract: AT49BV160ST SA10 ATMEL 910
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3560AS
AT49BV160S
AT49BV160ST
SA10
ATMEL 910
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a8000
Abstract: E0000 AT49BV160S AT49BV160ST SA10 F0000 irreversible locking
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3560AS
a8000
E0000
AT49BV160S
AT49BV160ST
SA10
F0000
irreversible locking
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07FFF
Abstract: sa59 F8000 SA10 10ffff a8000 64c1 67FFF
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3532AS
07FFF
sa59
F8000
SA10
10ffff
a8000
64c1
67FFF
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SA10
Abstract: F8000 41/AT49BV320S
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3532AS
SA10
F8000
41/AT49BV320S
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SA124
Abstract: Sa84 SA117 sa92 SA98 SA114 SA101 SA97 SA112 SA83
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3583AS
SA124
Sa84
SA117
sa92
SA98
SA114
SA101
SA97
SA112
SA83
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sa83
Abstract: SA124
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3583ASâ
sa83
SA124
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Untitled
Abstract: No abstract text available
Text: M CP Multi-Chip Package FLASH M EM ORY & SRAM CMOS 16M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM MB84VA2108-10/MB84VA2109-io • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature
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MB84VA2108-10/MB84VA2109-io
MB84VA2108:
MB84VA2109:
D-63303
F9807
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Untitled
Abstract: No abstract text available
Text: M CP Multi-Chip Package FLASH M EM ORY & SRAM 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2102-10/MB84VA2103-io • FEATURES
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MB84VA2102-10/MB84VA2103-io
MB84VA2102:
MB84VA2103:
D-63303
F9805
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67FFFH
Abstract: F9805 II1I11
Text: MCP Multi-Chip Package FLASH MEMORY & SRAM 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM MB84VA2106-10/MB84VA2107-io • FEATURES • Power supply voltage of 2.7 to 3.6 V
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II1I111111111I1I1I1I1I1IIM
11IIIIIIIIIIIIIIIIIIIIIIIIIIIIB
B1I111111111111111111I
MB84VA2106-10/MB84VA2107-io
MB84VA2106:
MB84VA2107:
F9805
67FFFH
F9805
II1I11
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