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    S9013 NPN Search Results

    S9013 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    S9013 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s9013 transistor

    Abstract: Transistor S9013 S9013 S9013 equivalent 0625W 112166 data sheet transistor s9013 S9013 to-92 s9013transistor S9013 TO92
    Text: S9013 S9013 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: 1 2 3 -55℃ to +150℃


    Original     		PDF S9013 500mA 30MHz s9013 transistor Transistor S9013 S9013 S9013 equivalent 0625W 112166 data sheet transistor s9013 S9013 to-92 s9013transistor S9013 TO92

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S9013-G S9013-H S9013-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9013-G S9013-H S9013-I 625Watts -55OC S9013

    S9013H

    Abstract: s9013g npn Transistor
    Text: MCC TM Micro Commercial Components S9013-G S9013-H S9013-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9013-G S9013-H S9013-I 625Watts -55OC S9013 100uAdc, S9013H s9013g npn Transistor

    S9013H

    Abstract: Transistor TO-92 S9013H S9013G
    Text: MCC TM Micro Commercial Components S9013-G S9013-H S9013-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9013-G S9013-H S9013-I 625Watts -55OC S9013 S9013H Transistor TO-92 S9013H S9013G

    S9013H

    Abstract: transistor s9013h S9013G s9013g npn Transistor Transistor TO-92 S9013H
    Text: MCC S9013-G S9013-H S9013-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9013-G S9013-H S9013-I 625Watts -55OC S9013 100uAdc, S9013H transistor s9013h S9013G s9013g npn Transistor Transistor TO-92 S9013H

    S9013H

    Abstract: s9013g npn Transistor S9013G
    Text: MCC S9013-G S9013-H S9013-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9013-G S9013-H S9013-I 625Watts -55OC S9013 100uAdc, S9013H s9013g npn Transistor S9013G

    s9013 transistor

    Abstract: transistor S9013 S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR


    Original     		PDF S9013 S9012 500mA 500mA, 30MHz S9013 s9013 transistor transistor S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS Ta=25℃ unless otherwise noted 3. COLLECTOR


    Original     		PDF S9013 S9012 500mA 500mA, 30MHz

    S9013

    Abstract: S9013 TO92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR


    Original     		PDF S9013 S9012 500mA 500mA, 30MHz S9013 S9013 TO92

    s9013 transistor

    Abstract: S9013 transistor S9013 f-30MHz transistor s9012
    Text: S9013 Transistor NPN TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features — Complementary to S9012 Excellent hFE linearity — MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage


    Original     		PDF S9013 S9012 500mA 500mA, 30MHz s9013 transistor S9013 transistor S9013 f-30MHz transistor s9012

    s9013 transistor

    Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz s9013 transistor J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3

    S9013 SOT-23

    Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
    Text: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF S9013 OT-23 OT-23 S9012 500mA 500mA, 30MHz S9013 SOT-23 J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23

    S9013 J3

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz S9013 J3

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz

    J3 s9013

    Abstract: S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.


    Original     		PDF S9013 500mA S9012. 300mW) OT-23 BL/SSSTC082 J3 s9013 S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 S9013 S9012.

    S9013

    Abstract: S9013 SOT-23 s9013 transistor datasheet
    Text: S9013 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 3.040 B 1.200 1.400 C 0.890 1.110 2 Emitter L 3 Tj, Tstg : - 55 C ~ + 150 C


    Original     		PDF S9013 OT-23 500mA 30MHz 01-Jun-2005 S9013 S9013 SOT-23 s9013 transistor datasheet

    transistor TO-92 S9013

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF S9013 500mA 30MHz transistor TO-92 S9013

    S9013 equivalent

    Abstract: Transistor S9013 s9013 transistor S9013 s9013 transistor datasheet S9013 data sheet data sheet transistor s9013 S9013 NPN Transistor transistor TO-92 S9013
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V


    Original     		PDF S9013 625Watts -55OC 500mAdc, 50mAdc) 100mAdc) S9013 equivalent Transistor S9013 s9013 transistor S9013 s9013 transistor datasheet S9013 data sheet data sheet transistor s9013 S9013 NPN Transistor transistor TO-92 S9013

    transistor S9013

    Abstract: S9013 to-92 s9013 transistor S9013 equivalent S9013 S9013 data sheet data sheet transistor s9013
    Text: S9013 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURE Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.5 A Collector-base voltage V (BR)CBO :40 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF S9013 100uA transistor S9013 S9013 to-92 s9013 transistor S9013 equivalent S9013 S9013 data sheet data sheet transistor s9013

    S9013

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9013 625Watts -55OC 100uAdc, S9013

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9013 Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9013 625Watts -55OC S9013 100uAdc,

    Untitled

    Abstract: No abstract text available
    Text: | FORWARD INTERNATIONAL ELECTRONICS LID. S9013 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. Package: TO-92 * Complement to S9012 * Collector Current: Ic=500mA * High Total Power Dissipation: ptH>25mW


    OCR Scan     		PDF S9013 S9012 500mA 100uA 500mA

    59013

    Abstract: S9013 s9013 transistor IC-500
    Text: 1 S9013 couxcToq NPN General Purpose Transistors % - v€ v2 SOT-23 ri/nrrR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOItage Collector Current-Continuous Symbol V a lu e V CEO VCBO 25 lc Total Device Dissipation FR-5 Board 1)


    OCR Scan     		PDF TA-25t TA-25 S9013 59013 s9013 transistor IC-500