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    S8836 Price and Stock

    Kycon Inc GSX-NS-88-3.68-50

    MODJK RT< 8P8C SHIELD BLK 3.68 S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GSX-NS-88-3.68-50 Tray 440
    • 1 -
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    • 1000 $1.37609
    • 10000 $1.37609
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    Mouser Electronics GSX-NS-88-3.68-50
    • 1 $2.62
    • 10 $2.13
    • 100 $2.03
    • 1000 $1.69
    • 10000 $1.28
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    Sager GSX-NS-88-3.68-50 1
    • 1 $1.94
    • 10 $1.84
    • 100 $1.62
    • 1000 $1.45
    • 10000 $1.45
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    Kycon Inc GSX-NS-88-3.68

    Modular Connectors / Ethernet Connectors 8P8C R/A SHIELD BLK 3.68mm PIN SPACING
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    Mouser Electronics GSX-NS-88-3.68 467
    • 1 $1.61
    • 10 $1.32
    • 100 $1.06
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    Sager GSX-NS-88-3.68 600 1
    • 1 $1.68
    • 10 $1.51
    • 100 $1.09
    • 1000 $1.07
    • 10000 $1.07
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    Hubbell Wiegmann S8836

    Wireway, Screw-Coverrew-Cover with Knockouts,8" X 8" X 36 | Wiegmann S8836
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS S8836 Bulk 1
    • 1 $354.06
    • 10 $325.73
    • 100 $325.73
    • 1000 $325.73
    • 10000 $325.73
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    Hubbell Wiegmann S8836G

    Wireway, Screw-Coverrew-Cover with Knockouts, Galvanized 8"X8"X36 | Wiegmann S8836G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS S8836G Bulk 1
    • 1 $359.77
    • 10 $323.78
    • 100 $323.78
    • 1000 $323.78
    • 10000 $323.78
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    Hubbell Wiegmann S8836NK

    Wireway, Screw-Coverrew-Cover, No-Knockouts o'S,8",8",36 | Wiegmann S8836NK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS S8836NK Bulk 1
    • 1 $354.06
    • 10 $325.73
    • 100 $325.73
    • 1000 $325.73
    • 10000 $325.73
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    Find more S8836 price and stock on Findchips.com

    S8836 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S8836 Bothhand Enterprise T1/CEPT/ISDN-PRI TRANSFORMER Original PDF
    S8836A Toshiba MICROWAVE POWER GaAS FET Scan PDF
    S8836B Toshiba MICROWAVE POWER GaAs FET Original PDF

    S8836 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S8836B

    Abstract: No abstract text available
    Text: TOSHIBA S8836B MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 29.5 dBm at f = 8 GHz • High gain - G1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    Original     		PDF S8836B S8836B

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA S8836A MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 29.5 dBm at f = 8 GHz • High gain - G1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    Original     		PDF S8836A ResistancS8836A S8836A

    S8836

    Abstract: No abstract text available
    Text: T1/CEPT/ISDN-PRI TRANSFORMER P/N: S8836 DATA SHEET A. General Specifications: 1. Dual SMT package contains both transmit and receive transformers 2. Models matched to leading transceiver ICs 3. Isolation voltage : 1500 Vrms 4. Operating temperature range : 0℃ to +70℃


    Original     		PDF S8836

    S8836B

    Abstract: Microwave Semiconductor s88
    Text: MICROWAVE POWER GaAs FET S8836B MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ SUITABLE FOR C-BAND AMPLIFIER P1dB= 29.5 dBm at 8 GHz „ HIGH GAIN G1dB= 7.5 dB at 8 GHz „ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta= 25°°C CHARACTERISTICS


    Original     		PDF S8836B S8836B Microwave Semiconductor s88

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    7400A

    Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
    Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions


    Original     		PDF

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


    Original     		PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


    Original     		PDF 2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293

    TGI8596-50

    Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
    Text: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4


    Original     		PDF MSE-2008 MSE-2009 TGI8596-50 TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL

    S8636

    Abstract: S8836 2A-12 Enterprise 1500 S5761 S5762 S5821 S5822 S5826 S5828
    Text: BOTHHAND T1/CEPT/ISDN-PRI TRANSFORMERS Enterprise Inc. Page 1 of 2 ! Dual SMT package contains both transmit and receive transformers. ! Models matched to leading transceiver Ics. ! Extended and standard temperature range models. ! Dual surface mount package contains both transmit and receive.


    Original     		PDF S5761 S5762 S5821 S5822 S5826 S5828 S8636 S8677 S8822 S8836 S8636 S8836 2A-12 Enterprise 1500 S5761 S5762 S5821 S5822 S5826 S5828

    2sc5066

    Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs


    Original     		PDF SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136

    MDM 6600

    Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
    Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1


    Original     		PDF 9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918

    RFM70U12D

    Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
    Text: 東芝半導体製品総覧表 2010 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004O 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109 RFM70U12D 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs Chip Form Features • High power - P idB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8836B at260 S8836B 226mA 10GHz

    S8836A

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA S8836A FEATURES: • HIGH POWER — 29.5 dBm at f = 8 GHz m ■ SUITABLE FOR C-BAND AMPLIFIER HIGH GAIN MdB = 7.5 dB at f = 8 GHz ■ ION IMPLANTATION RF PERFO RM ANCE S P E C IF IC A T IO N S {Ta = 25°C


    OCR Scan     		PDF S8836A S8836A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8836A Power GaAs FETs Chip Form Features • High power - P idB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8836A S8836A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs Chip Form Features • High power - PidB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8836B 002210b S8836B 226mA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8836A Power GaAs FETs Chip Form Features •H ig h power - Pld B = 29.5 dBm at f = 8 GHz • High gain - G-|dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8836A S8836A 0D221fl3

    JS8834-AS

    Abstract: No abstract text available
    Text: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36


    OCR Scan     		PDF S8834 JS8834-AS S8835 JS8835-AS S8836A S8836B JS8836A-AS S8837A JS8837A-AS S8838A

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P