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    S8265 Price and Stock

    ABLIC Inc. S-8265CAA-K8T2U7

    LITHIUM-ION BATTERY PROTECTION I
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    DigiKey S-8265CAA-K8T2U7 Cut Tape 3,990 1
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    Mouser Electronics S-8265CAA-K8T2U7 3,930
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    CoreStaff Co Ltd S-8265CAA-K8T2U7 100
    • 1 $2.361
    • 10 $1.77
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    Infineon Technologies AG 2EDS8265HXUMA2

    IC GATE DRIVER HALF-BRIDGE DSO16
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    DigiKey 2EDS8265HXUMA2 Cut Tape 763 1
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    2EDS8265HXUMA2 Digi-Reel 763 1
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    2EDS8265HXUMA2 Reel 1,000
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    Mouser Electronics 2EDS8265HXUMA2 2,146
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    Newark 2EDS8265HXUMA2 Cut Tape 969 1
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    Rochester Electronics 2EDS8265HXUMA2 45,000 1
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    Chip1Stop 2EDS8265HXUMA2 Cut Tape 892
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    Infineon Technologies AG KITDRIVER2EDS8265HTOBO1

    EVAL BOARD FOR 2EDS8265H
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    DigiKey KITDRIVER2EDS8265HTOBO1 Bulk 40 1
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    Mouser Electronics KITDRIVER2EDS8265HTOBO1 1
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    Newark KITDRIVER2EDS8265HTOBO1 Bulk 1
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    AC Connectors CS8265

    50A 250V 3-Prong Locking Plug
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    DigiKey CS8265 Ammo Pack 8
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    Infineon Technologies AG 2EDS8265HXUMA1

    IC GATE DRVR HALF-BRIDG DSO16-30
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    DigiKey 2EDS8265HXUMA1 Cut Tape
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    2EDS8265HXUMA1 Digi-Reel
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    Avnet Americas 2EDS8265HXUMA1 Reel 1,000
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    Newark 2EDS8265HXUMA1 Cut Tape 516 1
    • 1 $4
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    TME 2EDS8265HXUMA1 1
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    Chip 1 Exchange 2EDS8265HXUMA1 1,584
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    Find more S8265 price and stock on Findchips.com

    S8265 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S8265 Hamamatsu Si photodiode - Visible sensitivity photodiode with high humidity resistance Original PDF

    S8265 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Siフォトダイオード S8265 高耐湿性可視域用フォトダイオード 特長 用途 高耐湿性 85 °C, 85 %, 1000時間 屋外など湿度が高い場所での調光など 視感度補正フィルタ付 セラミックパッケージ (6 x 8 mm)


    Original     		PDF S8265 KSPDB0164JA KSPDB0340JA KSPDB0171JA KSPDA0127JB KSPD1041J02

    S8265

    Abstract: SE-171
    Text: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm Applications l Light dimmer in locations at high humidity or for outdoor use


    Original     		PDF S8265 SE-171 KSPD1041E01 S8265

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use


    Original     		PDF S8265 SE-171 KSPD1041E01

    0441

    Abstract: S8265 S-8265
    Text: PHOTODIODE Siフォトダイオード S8265 高耐湿性可視域用フォトダイオード 特長 用途 l 高耐湿性 85 ˚C, 85 %, 1000時間 l 視感度補正フィルタ付 l セラミックパッケージ (6 x 8 mm) l 受光面サイズ: 2.8 × 2.4 mm


    Original     		PDF S8265 KSPDA0127JA KSPDB0164JA KSPDB0170JA 435-85581126-1TEL 434-3311FAX KSPD1041J01 0441 S8265 S-8265

    Untitled

    Abstract: No abstract text available
    Text: Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications High humidity resistance 85 °C, 85 %, 1000 h Light dimmer in locations at high humidity or for outdoor use Visible-compensation filter Ceramic package (6 x 8 mm)


    Original     		PDF S8265 KSPD1041E02

    transistor 1BW

    Abstract: SE-171 1bw 85 S8265
    Text: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use


    Original     		PDF S8265 SE-171 KSPD1041E01 transistor 1BW 1bw 85 S8265

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


    Original     		PDF KSPD0001E09 near IR photodiodes S8745-01 S8558

    Untitled

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF SiS430DN SiS430DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    S8558

    Abstract: No abstract text available
    Text: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF SiS430DN SiS430DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S-8265

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF SiS430DN SiS430DN-T1-GE3 11-Mar-11 S-8265

    Si4483ADY

    Abstract: Si4483A SI4483ADY-T1-GE3 S-82659-Rev
    Text: New Product Si4483ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 • • • • Qg (Typ.) 44.8 nC Halogen-free TrenchFET Power MOSFET


    Original     		PDF Si4483ADY Si4483ADY-T1-GE3 18-Jul-08 Si4483A S-82659-Rev

    sis430dn

    Abstract: SiS430DN-T1-GE3
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF SiS430DN SiS430DN-T1-GE3 18-Jul-08

    SIS430DN

    Abstract: SiS430DN-T1-GE3
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF SiS430DN SiS430DN-T1-GE3 11-Mar-11

    Si5419DU

    Abstract: No abstract text available
    Text: Si5419DU Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package


    Original     		PDF Si5419DU Si5419DU-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original     		PDF SiS430DN SiS430DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12