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    S8014 TRANSISTOR Search Results

    S8014 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S8014 TRANSISTOR Datasheets Context Search

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    s8014 transistor

    Abstract: S8014 transistor K 14
    Text: Philips Semiconductors Product specification Silicon controlled switch DESCRIPTION BRY62 PINNING Silicon planar PNPN switch in a SOT143B plastic package. It is an integrated PNP/NPN transistor pair, with all electrodes accessible. PIN DESCRIPTION 1 APPLICATIONS


    OCR Scan     		PDF OT143B BRY62 S8014 MBB581 MBB53C s8014 transistor S8014 transistor K 14

    s8014 transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors bLS3^31 0 0 2 4 ^ 10R • APX Product specification N AUER PHILIPS/DISCRETE L7E NPN 9 GHz wideband transistor £ BFG520; BFG520/X; BFG520/XR FEATURES • High power gain • Low noise figure PINNING PIN DESCRIPTION • High transition frequency


    OCR Scan     		PDF BFG520; BFG520/X; BFG520/XR BFG520 and08 s8014 transistor