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    S4 2G Search Results

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    S4 2G Price and Stock

    APEM Inc MSS42G

    SWITCH SLIDE 4PDT 0.4VA 20V
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    Master Electronics MSS42G 357
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    Schneider Electric XB4BPS42GEX

    HAZ LOC - PB RED W/RED BOOT
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    DigiKey XB4BPS42GEX Box 1
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    Newark XB4BPS42GEX Bulk 1
    • 1 $228.79
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    RS XB4BPS42GEX Bulk 1 Weeks 1
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    Amphenol Advanced Sensors TH316S42GBNR

    THERMISTOR NTC 16KOHM AXIAL
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    L3 Harris Narda-Miteq AFS42-00101800-25-S-42-GW

    IC RF AMP GPS 100MHZ-18GHZ MOD
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    Amphenol Corporation TH316S42GBNR

    Thermistor NTC 16KOhm 1.5% 2-Pin DO-35 - Bulk (Alt: TH316S42GBNR)
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    Avnet Americas TH316S42GBNR Bulk 3,000
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    Avnet Abacus TH316S42GBNR 25 Weeks 3,000
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    S4 2G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ar8151

    Abstract: No abstract text available
    Text: SYS6440 Snapdragon S4 Pro Development Platform Industrial Tablets Video Surveillance Medical Equipment Thin Clients Video Conferencing Digital Signage SYS6440– Snapdragon S4 Pro APQ8064 Based Development Kit Snapdragon Features •     


    Original     		SYS6440 SYS6440â APQ8064 1080p30 SYS6440-00-P1 IFC6400-00-P1 IFC6410-00-P1 ar8151 PDF

    ar8151

    Abstract: AR8151/52
    Text: SYS6440 Snapdragon S4 Pro Development Platform Industrial Tablets Video Surveillance Medical Equipment Thin Clients Video Conferencing Digital Signage SYS6440– Snapdragon S4 Pro APQ8064 Based Development Kit Snapdragon • High Performance Krait CPUs Based on ARM architecture


    Original     		SYS6440 SYS6440â APQ8064 1080p30 RS-232 SYS6440-00-P1 IFC6400-00-P1 ar8151 AR8151/52 PDF

    APQ8064

    Abstract: i2c/qualcomm uart IFC6400
    Text: IFC6400 Snapdragon S4 Pro Qseven™ Computing Platform Processing, Power, and Performance • Qualcomm Snapdragon S4 Pro APQ8064 • 4-core Krait , 1.7GHz, 2MB L2 cache  2 GB on-board DDR3 PCDDR 533MHz  Independent Clock Scaling Per Core


    Original     		IFC6400 APQ8064 533MHz) HD1080p QCA6234 IFC6400 IFC6400-00-P1 SYS6440-00-P1 APQ8064 i2c/qualcomm uart PDF

    QCA6

    Abstract: No abstract text available
    Text: IFC6410 Snapdragon S4 Pro Pico-ITX Single-Board Computer Processing, Power, and Performance • Qualcomm Snapdragon™ S4 Pro APQ8064 • Quad core Krait , 1.7GHz, 2MB L2 cache  2 GB on-board DDR3  Independent Clock Scaling Per Core Connectivity, Storage & I/O


    Original     		IFC6410 APQ8064 HD1080p IFC6410 SYS6440-00-P1 IFC6400-00-P1 IFC6410-00-P1 QCA6 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm


    Original     		512Mb: MT42L32M16D1 09005aef8467caf2 PDF

    MT42L16M32

    Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
    Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package


    Original     		512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 MT42L16M32 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2 PDF

    MT42L16M32D1

    Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
    Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package


    Original     		512Mb: MT42L32M16D1, MT42L16M32D1 09005aef8467caf2 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball PDF

    Untitled

    Abstract: No abstract text available
    Text: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726A L S4-M/K/H/L DESCRIPTION Preliminary Hynix HYMD525G726A(L)S4-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix YMD525G726A(L)S4M/K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glassepoxy substrate. Hynix HYMD525G726A(L)S4-M/K/H/L series provide a high performance 8-byte interface in 5.25"


    Original     		256Mx72 HYMD525G726A 184-pin YMD525G726A 128Mx4 400mil 184pin PDF

    DDR200

    Abstract: DDR266A DDR266B du 7670
    Text: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD525G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix HYMD525G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy


    Original     		256Mx72 HYMD525G726 184-pin 128Mx4 400mil 184pin DDR200 DDR266A DDR266B du 7670 PDF

    Untitled

    Abstract: No abstract text available
    Text: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD525G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix HYMD525G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy


    Original     		256Mx72 HYMD525G726 184-pin 128Mx4 400mil 184pin PDF

    ccfl transformer

    Abstract: TV backlight inverter Transformers bobbin transformer ccfl inverter schematic inverter transformer lcd tv inverter schematic lcd inverter ccfl transformer transformer used in LCD
    Text: TURNS RATIO: MECHANICAL DIMENSIONS: mm P1:P2:P3:P4:S1:S2:S3:S4=1:1:1:1:100:100:100:100 ELECTRICAL CHARACTERISTICS: at 25 ° C 20 19 1 18 17 16 15 11 12 13 14 10 9 8 7 2 3 4 5 B 30.0 MAX 6 12 13 19 16 14 15 S2 S3 S4 C 11.0 MAX D TE N CT TE JE P A RO P As Transtek Magnetics packing standards.


    Original     		four13 TR02121608 TMP90102CT ccfl transformer TV backlight inverter Transformers bobbin transformer ccfl inverter schematic inverter transformer lcd tv inverter schematic lcd inverter ccfl transformer transformer used in LCD PDF

    mt42l128M32

    Abstract: mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L128M64D4 MT42L256M32D MT42L128M32D2
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


    Original     		MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb mt42l128M32 mt42l256m32 MT42L64M32D1 LPDDR2-1066 MT42L256M32D4 MT42L128M32D MT42L128M16D1 MT42L256M32D MT42L128M32D2 PDF

    MT42L64M64D2

    Abstract: mt42l128M32 LPDDR2-1066 64M32 MT42L128M64D4 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


    Original     		MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb MT42L64M64D2 mt42l128M32 LPDDR2-1066 64M32 MT42L MT42L256M32D4 MT42L64M32D1 LPDDR2 SDRAM micron micron lpddr2 PDF

    lpddr2 DQ calibration

    Abstract: micron lpddr2 lpddr2-s4 ADQ28 MT42L128M16D1 LPDDR2 SDRAM micron MT42L64M32D1 MT42L128M32D2 mt42l256m32 LPDDR2 1Gb Memory
    Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die


    Original     		MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb lpddr2 DQ calibration micron lpddr2 lpddr2-s4 ADQ28 MT42L128M16D1 LPDDR2 SDRAM micron MT42L64M32D1 MT42L128M32D2 mt42l256m32 LPDDR2 1Gb Memory PDF

    LPDDR2 SDRAM micron

    Abstract: lpddr2 MT42L256M32D2 LPDDR2 SDRAM micron lpddr2 MT42L128M32D1 micron LPDDR2 X32 35MR11 lpddr2 DQ calibration 216-ball LPDDR
    Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V


    Original     		MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 09005aef84427aab LPDDR2 SDRAM micron lpddr2 MT42L256M32D2 LPDDR2 SDRAM micron lpddr2 MT42L128M32D1 micron LPDDR2 X32 35MR11 lpddr2 DQ calibration 216-ball LPDDR PDF

    MT42L256M32D2

    Abstract: LPDDR2 SDRAM micron MT42L128M32D1 PS 229 ADQ-22 micron lpddr2 MT42L256M32D marking wl4 SMD MARKING code 4N Dual LPDDR2
    Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V


    Original     		MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 09005aef84427aab MT42L256M32D2 LPDDR2 SDRAM micron MT42L128M32D1 PS 229 ADQ-22 micron lpddr2 MT42L256M32D marking wl4 SMD MARKING code 4N Dual LPDDR2 PDF

    SMD MARKING CODE sdp

    Abstract: No abstract text available
    Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 Features Options • Ultra low-voltage core and I/O power supplies – VDD2 = 1.14–1.30V


    Original     		MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 09005aef84427aab SMD MARKING CODE sdp PDF

    hynix lpddr2

    Abstract: ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory
    Text: 2Gb LPDDR2-S4 SDRAM NT6TL64M32AQ Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS, /DQS is transmitted/received with data, to be used in capturing data at the receiver  Differential clock inputs (CK and /CK)


    Original     		NT6TL64M32AQ -64Meg 64M32 -168-ball hynix lpddr2 ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory PDF

    hynix lpddr2

    Abstract: Elpida LPDDR2 Memory elpida lpddr2 ELPIDA mobile dram LPDDR2 lpddr2 spec lpddr2 spec HYNIX LPDDR2 1Gb Memory LPDDR2 SDRAM hynix hynix lpddr2 sdram samsung lpddr2
    Text: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 


    Original     		512Mb NT6TL16M32AQ/ NT6TL32M16AQ hynix lpddr2 Elpida LPDDR2 Memory elpida lpddr2 ELPIDA mobile dram LPDDR2 lpddr2 spec lpddr2 spec HYNIX LPDDR2 1Gb Memory LPDDR2 SDRAM hynix hynix lpddr2 sdram samsung lpddr2 PDF

    NT6TL32M

    Abstract: No abstract text available
    Text: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS,  is transmitted/received with data, to be used in capturing data at the receiver 


    Original     		512Mb NT6TL16M32AQ/ NT6TL32M16AQ NT6TL32M PDF

    46LD16640A

    Abstract: LPDDR2 SDRAM
    Text: IS43/46LD16640A IS43/46LD32320A 1Gb x16, x32 Mobile LPDDR2 S4 SDRAM AUGUST 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		IS43/46LD16640A IS43/46LD32320A 10MHz 400MHz 20Mbps IS46LD32320A-3BLA2 IS46LD32320A-3BPLA2 IS46LD16640A-25BLA2 IS46LD32320A -25BLA2 46LD16640A LPDDR2 SDRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LD16320A IS43/46LD32160A 512Mb x16, x32 Mobile LPDDR2 S4 SDRAM ADVANCED INFORMATION APRIL 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		IS43/46LD16320A IS43/46LD32160A 512Mb 10MHz 533MHz 20Mbps 1066Mbps temperatu6320A-3BLA2 IS46LD32160A-3BLA2 IS46LD16320A-25BLA2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LD16640A IS43/46LD32320A 1Gb x16, x32 Mobile LPDDR2 S4 SDRAM PRELIMINARY INFORMATION MARCH 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O


    Original     		IS43/46LD16640A IS43/46LD32320A 10MHz 400MHz 20Mbps IS46LD16640A-3BLA2 IS46LD32320A-3BLA2 IS46LD16640A-25BLA2 IS46LD32320A -25BLA2 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZEICHNUNG GESCHUTZT COPYRIGHT AMP ALLE DEUTSCHLAND RECHTE DURCH REV . 1388 ANDERUNG MASS GMBH VORBEHALTEN 2.54 2g 4 WAR 2 • S4 2 ZEICHNUNG 3 LOT L A NGE C IN VON HI NZU ALLG. EUROPEAN 3.0 VERPACKUNG5ANGABE IN TOLERANZ ± 0 . 1 PROJECTION 3.1 DO NOT GEANDERT


    OCR Scan     		K215314 PDF