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    S2V 12 Search Results

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    S2V 12 Price and Stock

    Nichicon Corporation LQS2V121MELZ25

    CAP ALUM 120UF 20% 350V SNAP TH
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    DigiKey LQS2V121MELZ25 Bulk 28 1
    • 1 $4.07
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    Mouser Electronics LQS2V121MELZ25
    • 1 $3.98
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    • 100 $2.11
    • 1000 $1.77
    • 10000 $1.7
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    Newark LQS2V121MELZ25 Bulk 250
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    • 100 $1.93
    • 1000 $1.55
    • 10000 $1.45
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    Nichicon Corporation LLS2V121MELZ

    CAP ALUM 120UF 20% 350V SNAP TH
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    DigiKey LLS2V121MELZ Bulk 250
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    Mouser Electronics LLS2V121MELZ
    • 1 $2.51
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    • 100 $1.34
    • 1000 $1.19
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    Newark LLS2V121MELZ Bulk 250
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    TME LLS2V121MELZ 250
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    Avnet Abacus LLS2V121MELZ 32 Weeks 250
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    Nichicon Corporation LLS2V121MELY

    CAP ALUM 120UF 20% 350V SNAP TH
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    DigiKey LLS2V121MELY Bulk 250
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    • 1000 $1.33752
    • 10000 $1.33752
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    Mouser Electronics LLS2V121MELY
    • 1 $2.51
    • 10 $2.04
    • 100 $1.34
    • 1000 $1.19
    • 10000 $1.16
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    Newark LLS2V121MELY Bulk 250
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    • 100 $1.44
    • 1000 $1.13
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    TME LLS2V121MELY 250
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    Avnet Abacus LLS2V121MELY 32 Weeks 250
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    Hirose Electric Co Ltd DF11CZ-12DS-2V(52)

    Headers & Wire Housings 12P SMT RECEPTACLE
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    Mouser Electronics DF11CZ-12DS-2V(52) 3,088
    • 1 $2.01
    • 10 $1.42
    • 100 $1.23
    • 1000 $1.14
    • 10000 $1.01
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    Hirose Electric Co Ltd DF11CZ-12DS-2V(22)

    Headers & Wire Housings 12P SMT RECEPTACLE
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    Mouser Electronics DF11CZ-12DS-2V(22) 73
    • 1 $1.39
    • 10 $0.979
    • 100 $0.849
    • 1000 $0.675
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    S2V 12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C502B

    Abstract: clock ma 1042
    Text: PL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION •     VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-125dBc @ 10kHz offset and 155.52MHz output) Selectable frequency multipliers (x1, x2, x4, x8


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    PL602-00 25MHz -125dBc 10kHz 52MHz 25MHz) C502B PL602-00 -12ves C502B clock ma 1042 PDF

    clock ma 1042

    Abstract: C502A P602-00DC PLL602-00DC A-0303
    Text: PLL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION • • • • VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-135dBc @ 10kHz offset) selectable frequency multipliers (x1, x2, x4, x8


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    PLL602-00 25MHz -135dBc 10kHz 25MHz) A0303-03H C502A PLL602-00 clock ma 1042 C502A P602-00DC PLL602-00DC A-0303 PDF

    clock ma 1042

    Abstract: max 474 ic data X62M
    Text: PL502-00 Multiplier VCXO IC Die for 12 to 25MHz Parallel Resonant Crys tals •     XIN 27 XOUT 29 VDD S0V S1V S2V  65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 500ppm minimum). Low phase noise (-125dBc @ 10kHz offset and


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    PL502-00 25MHz 500ppm -125dBc 10kHz 52MHz 25MHz) C502B PL502-00 clock ma 1042 max 474 ic data X62M PDF

    XTAL 25MHz

    Abstract: 25Mhz datasheet crystal 155.52MHZ XTAL 25MHZ Datasheet C502A P502-00DC PLL502-00 PLL502-00DC
    Text: PLL502-00 Multiplier VCXO IC Die for 12 to 25MHz Parallel Resonant Crystals • • • • • VDD S0V S1V S2V • 65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 500ppm minimum). Low phase noise (-130dBc @ 10kHz offset at


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    PLL502-00 25MHz 500ppm -130dBc 10kHz 44MHz 25MHz) A0707-07A XTAL 25MHz 25Mhz datasheet crystal 155.52MHZ XTAL 25MHZ Datasheet C502A P502-00DC PLL502-00 PLL502-00DC PDF

    C502A

    Abstract: P502-50DC PLL502-50 PLL502-50DC s2v25
    Text: PLL502-50 VCXO IC Die for 20 to 52MHz Parallel Resonant Crystals DIE CONFIGURATION FEATURES • • • • • • XIN 27 XOUT 29 VCON 31 OE^ VDD VDD S0V S1V S2V Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 380ppm minimum).


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    PLL502-50 52MHz A0303-03J 380ppm 52MHz) C502A P502-50DC PLL502-50 PLL502-50DC s2v25 PDF

    15d smd transistor

    Abstract: C502A P502-50DC PLL502-50 PLL502-50DC A0303-03J
    Text: VCXO IC Die for 20 to 52MHz Parallel Resonant Crystals •     XIN 27 XOUT 29 VCON 31 S2V 23 S1V 25 S0V VDD 65 mil VDD  Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 380ppm minimum). Selectable frequency dividers (x1, 1/2, 1/4, 1/8)


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    52MHz A0303-03J 380ppm 52MHz) C502A 15d smd transistor C502A P502-50DC PLL502-50 PLL502-50DC A0303-03J PDF

    marking 2u

    Abstract: marking code 10 sot23 S2V 3 BCW66 SMBTA64
    Text: SMBTA64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking SMBTA64 s2V Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage


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    SMBTA64 VPS05161 marking 2u marking code 10 sot23 S2V 3 BCW66 SMBTA64 PDF

    Q68000-A2485

    Abstract: Q68000-A2625
    Text: PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 High collector current ● High DC current gain ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C Maximum Ratings


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    Q68000-A2625 Q68000-A2485 OT-23 Q68000-A2485 Q68000-A2625 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3  High collector current  High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage


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    SMBTA63, SMBTA64 VPS05161 SMBTA63 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3  High collector current  High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage


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    SMBTA63, SMBTA64 SMBTA63 VPS05161 EHP00364 EHP00215 EHP00415 EHP00365 Aug-20-2001 PDF

    S2V 80

    Abstract: SMBTA63 SMBTA64
    Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3  High collector current  High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage


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    SMBTA63, SMBTA64 SMBTA63 VPS05161 EHP00364 EHP00215 EHP00415 EHP00365 Nov-30-2001 S2V 80 SMBTA63 SMBTA64 PDF

    EHP00364

    Abstract: No abstract text available
    Text: SMBTA 63, SMBTA 64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking Pin Configuration SMBTA 63 s2U 1=B 2=E 3=C SOT-23 SMBTA 64 s2V 1=B 2=E 3=C SOT-23 VPS05161 Package Maximum Ratings Parameter Symbol


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    OT-23 VPS05161 EHP00364 EHP00215 EHP00415 EHP00365 Oct-14-1999 EHP00364 PDF

    DIODE in s2v

    Abstract: DIODE S2v DIODE S2v 50 DIODE S2v 01 S2V 80 S2V71 S2V7 diode color code
    Text: アキシャルダイオード 一般整流ダイオード Rectifier Diode Axial Diode •外形寸法図 OUTLINE DIMENSIONS Package:AX10 Unit : mm Weight:0.65g(typ.) 7+0.5 −0 26.5±2 26.5±2 φ4.4+0.2 −0.1 * 600V 1.7A φ1.0±0.1 S2V□


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    PackageAX10 S2V71 S2V20 S2V60 25unless Tj150 wave50Hz DIODE in s2v DIODE S2v DIODE S2v 50 DIODE S2v 01 S2V 80 S2V71 S2V7 diode color code PDF

    S2V 80

    Abstract: S2V 3 S2V 12
    Text: SHINDENGEN General Purpose Rectifiers Single OUTLINE DIMENSIONS S2V60 Unit : mm 600V 1.7A FEATURES High voltage High reliability with superior moisture resistance Applicable to Automatic Insertion APPLICATION Conventional Rectification Power source Power Supply


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    S2V60 1mst10ms S2V 80 S2V 3 S2V 12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V


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    ADG1421/ADG1422/ADG1423 10-lead 10-lead, ADG1421 ADG1421 PDF

    s3h-02

    Abstract: S52A s3vc0 S2V20 S2LA20 s19j S1K20H S1K40 S2K20 S2K40
    Text: -71 m tft te & % Vr s m Vrrm V (V) Vr 1FM T fc# (A) (° C ) lo, If * [si & n £ & I Rtnax VFtnax IFSM m M - & fc fk ft * m <d ^ m S1K 20H S1K 40 S2K 20 S2K 20H S 2K 40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V 20 S2V 60 S 3 H -0 2 S 3K 40 S3L20U m n a m n ñ


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    S1K20H 100ns S1K40 300ns S2K20 S2K20H S2K40 s3h-02 S52A s3vc0 S2V20 S2LA20 s19j S1K40 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 • High collector current • High DC current gain Type Marking Ordering Code tape and reel PinCïonfigur ation 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C


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    Q68000-A2625 Q68000-A2485 OT-23 0122b01 flE35bt35 PDF

    marking code SOT23 SSi

    Abstract: MARKING code SSi SOT23 code marking ssi sot-23 O ssi SOT-23
    Text: SIEMENS PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 • High collector current • High DC current gain Type Marking Ordering Code tape and reel PinCïonfigui ation 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C


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    Q68000-A2625 Q68000-A2485 OT-23 P00853 marking code SOT23 SSi MARKING code SSi SOT23 code marking ssi sot-23 O ssi SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: > I CD I O DIMENSIONS IN METRIC DO NOT SCALE DRAWING sMM DWG. NO. S D -5 9 2 3 3 -9 0 * * 2—I Ftf □ll|l m cu on © " V' h rfK S P ^ - > ^ sh” > v,r ;34+P 7;d 'H -P 7; S 5 S * y_, i ^ a s 4gc3-H-5S-S2V.' § S=SV 4 ¡1 - S S 2 I •■! i s I sDH-oJW-iiSii "0^3


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    PDF

    sick sensor

    Abstract: No abstract text available
    Text: Color Sensors, Operation Uses fo r co lo r sensors color sensors are becoming increa­ singly im portant in the automation o f processes and manufacturing lines in industry, particularly the processing industry. In practice, the possibilities fo r application are virtually unlimited.


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    PDF

    S3V 8* Rectifier

    Abstract: s4vb s4vb 10 46 s4vb bridge rectifier
    Text: Large Ifsm I-I S MD • — 0 .8 -1 A - 0 .4 -1 A 1-1.5A Bridge * • S I P - 4~6A *?i gDiodes j 1 0 -2 5 A * S Q IP ;• 2 .3 -2 0 A 2 -1 0 A 1 5 -5 0 A * SI ZB □ S1NB □ S1W B A D S1YB □ S1ZB □ S1NB □ S1 WB(A) □ S1VB □ D2SBA □ — D 2SBD L — Low Noise


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    D10XB D15XB D20XB D25XB S3V 8* Rectifier s4vb s4vb 10 46 s4vb bridge rectifier PDF

    MPY600

    Abstract: MPY600AP 25VY
    Text: 185 - MPY600 v ± V CC = ± id 5 V , *?• m ( 0 ^5 # Burr B r o w n T a= 2 5 r ) 4k ft MPY600AP * 'h ; * * ¥ 1 * £ ± 1 ,- y2 ± 2 y z ,- z 2 ± 2 A-umtEmw ± 2 .2 V ± 2 .5 V TtyM v 100 / / l . 5 h l E K 'J - 7 Y +l 11 > I SV R «E a t) m sm m c a


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    MPY600 MPY600AP 58MHZ-C 58MHzT-0 500kHz, /-500kHz, MPY600AP 25VY PDF

    RCV57

    Abstract: No abstract text available
    Text: HITACHI/ OPTOELECTRONICS i44cìb2QS DQ123S7 7bl « H I T M . ' HrTACHi blE » SDH/SONET O C -12 Lightwave Receiver RCV5702AN Features • • Complied with S O N E T /S D H standard • • InGaAs APD Operation at 622.08M b /s for 1.3^im or • 1.55|im wavelength


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    DQ123S7 RCV5702AN 50-ohm RCV57 PDF

    DIODE 24B

    Abstract: DIODE S2v DIODE in s2v Mitsubishi transistor circuit diagram for je 182 g
    Text: MITSUBISHI TRANSISTOR MODULES QM800HA-24B j HIGH POWER SWITCHING USE [ INSULATED TYPE | QM800HA-24B • • • • • Ic Collector c u rre n t. 800A V cex Collector-em itter v o lta g e 1200V hFE DC current g a in . 750


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    QM800HA-24B QM800HA-24B E80276 E80271 DIODE 24B DIODE S2v DIODE in s2v Mitsubishi transistor circuit diagram for je 182 g PDF