Untitled
Abstract: No abstract text available
Text: Minimate Range - S2L/B2L 3.5 Since conductors with cable sizes of up to 1 mm2 can be connected, the Minimate Range is a positive alternative to 2.5/2.54 mm pitch connectors. In particular because it uses up to 10% less space on the PCB. At the same time, due to its tension
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5/24LH
5/26LH
5/28LH
5/30LH
5/32LH
5/34LH
5/36LH
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1283310
Abstract: LB1807 lb1809 148781 front panel ls36 1-57748-0
Text: Minimate Range - S2L/B2L 3.5 Since conductors with cable sizes of up to 1 mm2 can be connected, the Minimate Range is a positive alternative to 2.5/2.54 mm pitch connectors. In particular because it uses up to 10% less space on the PCB. At the same time, due to its tension
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E-62291-T
Abstract: S2L 04 FUSE ZKS E-62291 WDU-16 weidmuller fuse AWM E STYLE 2464 Weidmuller plc WDU16
Text: Datasheet PLC Interface Modules QuickBlock Universal PL C Interfa ce NEW C om pl et e Uni ver s al PL C S y ste m f o r wiri ng u p t o a n y P L C. T his allo ws fo r : • Inventory reduction: field module and cable under one part number • Rail space and labor reduction, 8 channels or 16
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co-16
ZKS-16
20-Pole
12-Pole
LIT0113
E-62291-T
S2L 04
FUSE ZKS
E-62291
WDU-16
weidmuller fuse
AWM E STYLE 2464
Weidmuller plc
WDU16
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Untitled
Abstract: No abstract text available
Text: MDRE>66; UJSV SGEUKHKGS TRGEKCNKTUT MDRE>76 UGEJPKECN TRGEKHKECUKQPT QH TKPING3RJCTG TKNKEQP DSKFIG SGEUKHKGS WQNUCIG SCPIG 3 ;6 nj 7666 Wjgnm EVSSGPU 3 >46 Chk`l`m HGCUVSGT 0 Tolb` jp`lgj\_ l\ndib@ 78; Chk`l`m k`\f 0 Njq ajlq\l_ pjgn\b` _ljk MDRE3>576 OGEJCPKECN FCUC
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OKN3TUF38682
79r79hh/
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he 234
Abstract: No abstract text available
Text: MDRE>66; DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT MDRE>76 UGEJPKECN TRGEKHKECUKQPT QH TKPING3RJCTG TKNKEQP DSKFIG SGEUKHKGS WQNUCIG SCPIG 3 ;6 nj 7666 Wjgnm EVSSGPU 3 >46 Chk`l`m HGCUVSGT 0 Tolb` jp`lgj\_ l\ndib@ 78; Chk`l`m k`\f 0 Njq ajlq\l_ pjgn\b` _ljk
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OKN3TUF38682
49hm/
79r79hh/
he 234
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chkm
Abstract: he 234
Text: MDRE>66; DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT MDRE>76 UGEJPKECN TRGEKHKECUKQPT QH TKPING3RJCTG TKNKEQP DSKFIG SGEUKHKGS WQNUCIG SCPIG 3 ;6 nj 7666 Wjgnm EVSSGPU 3 >46 Chk`l`m HGCUVSGT 0 Tolb` jp`lgj\_ l\ndib@ 78; Chk`l`m k`\f 0 Njq ajlq\l_ pjgn\b` _ljk
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OKN3TUF38682
79r79hh/
chkm
he 234
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s2l 78
Abstract: 281-1406-ND 281-1408-ND 281-1448-ND 12AWG 281-1414-ND Weidmuller BLZ 5.08 281-1943-ND 281-1181-ND 281-1849-ND
Text: p114-118 Weidmuller Term. Blk 3/6/06 10:01 AM Page 1 Terminal Blocks 6.2 4.4 8.3 Ø 1.3 16.75 Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm Specifications: • Screw Clamp • UL: 300V @ 10A • 14AWG • Pin Length: 4.5mm
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p114-118
14AWG
12AWG
EU061)
s2l 78
281-1406-ND
281-1408-ND
281-1448-ND
12AWG
281-1414-ND
Weidmuller BLZ 5.08
281-1943-ND
281-1181-ND
281-1849-ND
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1250410
Abstract: 100352 BK SMK 1500 162554-000 PA66 - GF 25 relay
Text: Weidmüller – Partner in Industrial Connectivity 2 PCB terminal blocks, PCB connectors, panel feedthrough terminal blocks and electronics housings Catalogue 2013 Let’s connect. Catalogue 2013 OMNIMATE – device connectivity As experienced experts we support our customers and partners around the world
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1381510000/01/2013/SMDM
1250410
100352
BK SMK 1500
162554-000
PA66 - GF 25 relay
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CL31A
Abstract: CL05A
Text: August 2009 MULTILAYER CERAMIC CAPACITORS We, Samsung, declare that our component MLCC is produced in accordance with EU RoHS directive. 1. RoHS Compliance and restriction of Br The following restricted materials are not used in packaging materials as well as products in compliance with the law and restriction.
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kevin0130
CL31A
CL05A
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1748600000
Abstract: TI 36 1748020000 1748010000 1727570000
Text: Minimate Range- S2L/B2L 3.5 a t—; - •] <0 b 20.6 r " " C _L a • I Technical data VDE UL CSA Technical data VDE UL CSA Technical data VDE UL CSA Rated voltage V 100* 150 50 Rated voltage (V) 100* 50 50 Rated voltage (V) 100- 150 50 Rated current (A)
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Untitled
Abstract: No abstract text available
Text: Product Selection Matrix 3.50 m m p ilc h S2L/E52L 3.5 • 150 V 3.50 mm I 5.00 mm yes no p. 86 | no yes p. 86 I p. 106 p. 106 p. 107 p 107 yes SLA / BLA STV S/STW S • 300 V • 10 A • 22. .12 AWG •2 6 . 12 AWG 5.08 mm no Powermate Range • 300 V
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S2L/E52L
3C0-600
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Untitled
Abstract: No abstract text available
Text: DR A M M O D U L E KMM466F803BS2-L 8Mx64 SODIMM 8Mx8 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 4 66 F 80 3B S2-L Revision History Version 0.0 (Sept, 1997) , Removed two AC parameters tCACP(access time from CAS) and tAAP(access tim e tro m col. addr.) in AC CHARACTERISTICS.
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KMM466F803BS2-L
8Mx64
KMM466F803BS2-L
8Mx64bits
466F803BS2-L
cycles/128ms,
150Max
KM48V8104BS-L
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CD 1691 CB
Abstract: TELEFUNKEN O 670 VL sl2 357
Text: Temic BFP67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran sistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.
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BFP67W
D-74025
07-Nov-97
CD 1691 CB
TELEFUNKEN O 670 VL
sl2 357
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zo 107 NA P 611
Abstract: BFR96 L 0403 817 BFR96T
Text: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain
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BFR96T
BFR96T
D-74025
31-Oct-97
zo 107 NA P 611
BFR96
L 0403 817
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kl SN 102 94-0
Abstract: WV2 marking marking WV2 Q 371 Transistor BFQ67WI
Text: TEMIC BFQ67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran sistor has superior noise figure and associated gain
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BFQ67W
20ges
D-74025
07-Nov-97
kl SN 102 94-0
WV2 marking
marking WV2
Q 371 Transistor
BFQ67WI
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955 539 ic
Abstract: BFP81 0211s ix 0640
Text: Tem ic BFP81 Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure
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BFP81
D-74025
31-Oct-97
955 539 ic
BFP81
0211s
ix 0640
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temic 0675
Abstract: 7334
Text: Tem ic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. M RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • Low noise figure
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BFQ81
D-74025
31-Oct-97
temic 0675
7334
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f39e
Abstract: No abstract text available
Text: 0 N t e œ (D N “ I o - - tsd — — I 3 > - J 7. 2. ^ Z h . -— (HOLE' O l A 'O 'i FIG.3 j ;z: - 708-5302 F/ G, 2 *>DIH*i U^-C J £ > 'rc t> — - — I a. a n « a e m i* 6. « • A _ k o N . a c c u m u la t e ^ \ TOLERANCE f.sc 3125-'" *7 i» >- :7~c o S 3 S 5 - N Û . 2<t? Z3
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S2-L1UWG--20--
76272-iD
ECO-11-005030
f39e
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE W ÊF mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . NF = 1.8dB, |S ie l = 9.5dB f=2GHz U nit in mm 2 2 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC4324
--j50
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4322 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm w êf Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . + 0.5 2.5 -0 .3 + 0.25 Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2—7.5dB f —2GHz ^1-5 —0 .1 5 1 «o o
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2SC4322
--j50
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MBS4992
Abstract: MBS4991 equivalent MBS4991 triac phase control circuits triac phase control B50C bidirectional switch scr triggering
Text: MBS4991 silicon MBS4992 SILICON BIDIRECTIONAL SWITCH (PLASTIC) 6.0-10 VOLTS 500 mW SILICON BIDIRECTIONAL SWITCH . . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR triggering application and as voltage level detectors.
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MBS4991
MBS4992
MBS4992
MBS4991 equivalent
MBS4991
triac phase control circuits
triac phase control
B50C
bidirectional switch
scr triggering
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ic ma 8910
Abstract: 2SC4319
Text: 2SC4319 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 1 9 Unit in mm VHF'-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB, |S2iç|2= 15dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC4319
S21el2
Coll53
ic ma 8910
2SC4319
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sem 2106
Abstract: TRANSISTOR 3856
Text: 2SC4317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r a 3 1 7 M F • V ■ m Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF - l.ldB , |S 2 ie l2 = 13dB f=lGHz + 0.5 2.5 -0.3 +0.25
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2SC4317
SC-59
a--25X
--j50
sem 2106
TRANSISTOR 3856
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4840 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC484Q Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. N F = l.ldB , |S2 ie|2= 13dB f=lGHz MAXI MUM RATI NGS (Ta = 2 5°C) CHARACTERISTIC Collector-Base Voltage
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2SC4840
2SC484Q
51-uasc
-j250
--20mA
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