LM3S6432
Abstract: HDR 2x5 TH connector
Text: Stellaris Serial-to-Ethernet Reference Design Kit User ’s Manual RDK-S2E-04 Co pyrigh t 2 008– 200 9 Te xas In strumen ts Copyright Copyright © 2008–2009 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.
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RDK-S2E-04
LM3S6432
HDR 2x5 TH connector
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SMTRAM3-7-5ET
Abstract: HDR 2X6 shrd HDR 2x6 SMT_RA_M3 DIODE S2E s2e transistor ARM Cortex M4 s2e diode db9f female DB9M
Text: Stellaris Serial-to-Ethernet Reference Design Kit U S E R ’S M A N U A L RDK-S2E-01 Co pyrigh t 200 8 Lumin ary Micro, In c. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE,
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RDK-S2E-01
32-bit
16-bit
SMTRAM3-7-5ET
HDR 2X6 shrd
HDR 2x6
SMT_RA_M3
DIODE S2E
s2e transistor
ARM Cortex M4
s2e diode
db9f female
DB9M
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Untitled
Abstract: No abstract text available
Text: 7 D 75 N D75NR EUPEC S2E » • 3M03ET7 OnOOfllE flbl ■ UPEC Typen reihe/Type range_ D 7 5 N / D 7 5 NR_ 400_ 800_ 1200_ 1400_ 1600 Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte
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D75NR
3M03ET7
T-91-20
D1509N
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LM12K
Abstract: BRIDGE-RECTIFIER 5v 1A BRIDGE-RECTIFIER 15v LM12CK LM12CLK BRIDGE-RECTIFIER 100v 1a op amp 40v 100w LM12C LM12 BRIDGE-RECTIFIER operation
Text: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic
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T-79Z3
TUH/8704-29
LM12K
BRIDGE-RECTIFIER 5v 1A
BRIDGE-RECTIFIER 15v
LM12CK
LM12CLK
BRIDGE-RECTIFIER 100v 1a
op amp 40v 100w
LM12C
LM12
BRIDGE-RECTIFIER operation
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Untitled
Abstract: No abstract text available
Text: S2E EUPEC D 3 4 0 3 5 1 ? Gcmaa?1! 3 5 a • upec 'T-O h r 7 Tvoenreihe/Tvoe range D 10 N 400 Elektrische Eigenschaften Electrical properties Höchstzulässlae Werte Periodische Vrrm Spitzensperrspannung Effektiver I frmsm Durchlaßstrom Dauergrenzstrom I favm
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D448N.
D1509N.
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TRANSISTOR FF75
Abstract: 1BW TRANSISTOR
Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc T3 7 • U P E C Thermal properties DC, pro Baustein / per module
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34D32CI7
TRANSISTOR FF75
1BW TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: 7 -3 7 - 3 / FF 150 R 06 KL EUPEC S2E Transistor T> 34D32T7 Thermische Eigenschaften Transistor Rthjc Elektrische Eigenschaften 0GG0224 Bectrical properties RthCK Ö2S « U P E C Thermal properties 0,09 0,18 0,03 0,06 DC, pro Baustein / per module DC, pro Zweig / per arm
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34D32T7
0GG0224
34D32CI7
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LM12
Abstract: lm12 op amp ILM12 LM12 OP amp IC LM12CK OF IC 723 linear regulator LM12K
Text: LM12 NATL SEMICOND LINEAR S2E D • bSOllEM 0DLÖE3H b T-79-23 National Semiconductor LM12 (L/C/CL) 150W Operational Amplifier General Description The LM12 is a power op amp capable of driving ±35V at ±10A while operating from ±40V supplies. The monolithic
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T-79-23
LM12
lm12 op amp
ILM12
LM12 OP amp IC
LM12CK
OF IC 723 linear regulator
LM12K
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J975
Abstract: 1BW TRANSISTOR 733transistor
Text: EUPEC S2E • 34032^7 000020b flOT » U P E C FF 75 R 10 K 7 =3 « / Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VCES Maximum rated values 1000 V 75 A lc Thermische Eigenschaften Thermal properties DC, pro Baustein / per module
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000020b
sat00
J975
1BW TRANSISTOR
733transistor
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transistor 1BW 57
Abstract: IGBT EUPEC
Text: FF 200 R 06 KF EUPEC S2E ]> G G 00232 TTl •UPEC Thermische Eigenschaften Thermal properties 0,08 °C/W Rthjc DC, pro Baustein / per module 0,16 °C/W DC, pro Zweig / per arm 0,03 °C/W RthCK pro Baustein/per module 0,06 °C/W Transistor Transistor Elektrische Eigenschaften
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GGG0232
transistor 1BW 57
IGBT EUPEC
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Untitled
Abstract: No abstract text available
Text: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 T3 7 • U P E C Thermal properties DC, pro Baustein / per module
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TRANSISTOR KT 838
Abstract: FF200 UTG 16 diode sg 5 ts
Text: FF 200 R 06 KF EUPEC S2E ]> Rthjc Elektrische Eigenschaften Electrical properties V ces Maximum rated values 600 V 200 A RthCK lc G G 00232 Thermische Eigenschaften Transistor Transistor 3 4 0 3 2 *1 7 T T l •UPEC Thermal properties 0,08 0,16 0,03 0,06 DC, pro Baustein / per module
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GGG0232
34D32CI7
TRANSISTOR KT 838
FF200
UTG 16
diode sg 5 ts
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WR24D15/1000u
Abstract: WR48D12/1250U computer products wr24D12
Text: COMPUTER PRDTS/ POWER S2E D H 5313103 OODObBT 2fl7 BCPR WR-U SERIES Single and Dual Output 30 W att DC/DC Converters • • • • • • 30 W atts 2:1 Input Range Efficiency to 86% Isolated Outputs 2 Year W arranty For new designs, please see the NFC Series
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00D0b3cÃ
48VDC.
WR24D15/1000u
WR48D12/1250U
computer products wr24D12
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LN800
Abstract: C2E1 F400 diode f400
Text: ^ 3 7 -3 / F 400 R 06 KF EUPEC S2E ]> 3M D 3ET7 D 0 D D 2 5 fl Thermische Eigenschaften Itansistor Transistor • Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 400 A •c 1Q Ô B IU P E C Thermal properties
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D0DD25fl
34D32CI7
LN800
C2E1
F400
diode f400
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OPA104CM
Abstract: opa104 OPA104AM A104
Text: BURR-BROW N CORP S2E D • 17313bS 001b3T3 3 ■ T-THS BU R R -B R O W N 0 P A 1Q4 c Ultra-Low Bias Current Low Drift FET Input OPERATIONAL AMPLIFIER c FEATURES APPLICATIONS • SPECIFICATIONS GUARANTEED OVER TEM PERATURE • CURRENT TO VOLTAGE CONVERSION
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17313bS
001b3T3
1015n
OPA104
10/xV/Â
OPA104CM
OPA104AM
A104
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Untitled
Abstract: No abstract text available
Text: S2E » EUPEC A 438 S 3403217 0000554 EPS « U P E C • 'P Z S -l'N Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600.1300 15 V 50 V V drm V rrm V rr m C
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Untitled
Abstract: No abstract text available
Text: EUPEC S2E A 618 S T> 34035*17 OOOOSbE 3Ô 1 » U P E C '~f =7 5 Typenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm tp = 1 MS
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DIODE S2E
Abstract: 810P A618 s2e diode
Text: EUPEC S2E A 618 S T> 34035*17 OOOOSbE 3Ô 1 » U P E C '~f =7 5 - j l o 600 Typenreihe/Type range 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600. 1300 V 15 V 50 V drm V rrm
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Untitled
Abstract: No abstract text available
Text: E UP EC S2E J> 34032^7 0G0GS7G *450 * U P E C A 1250 S lÿpenreihe/Type range 600 800 1000 1100 1200 1300* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 600.1300 V 15 V 50 V qrm V rrm V r r m C tp = 1 «S
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Differential Pressure Transducer BHL
Abstract: 1-8256
Text: CALEX MA N UF AC T UR I NG CO S2E lflllSSD D DD01G33 07^ B K EX Model 165 Bridgesensor 510 687-4411 (800) 542-3355 FAX: (510) 687-3333 FEATURES • No other Function Modules Needed. Just Add Power. • Under or Over Voltage Alarm Function Built-in. • Power Almost any Transducer with 4 to 10 Volt
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DD01G33
MK165
Differential Pressure Transducer BHL
1-8256
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1000 watt power supply scheme
Abstract: 1000 watt step down converter scheme 48T5.15K 24T5.12K 12T5.12K Calex
Text: CALEX M A N U F A C T U R I N G CO S2E D 1 Ö 1 1 2 S G DDOliafl at? * C E X • NEW* 55 Watt Triple Output DC/DC Converters _3355 Vincent Road, Pleasant Hill, CA 94523-4389 800-542-3355 Telephone 415 932-3911 FEATURES FAX: (415)932-6017 J • PCB Mounting With Optional Heat Sink Or Chassis
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112SG
1000 watt power supply scheme
1000 watt step down converter scheme
48T5.15K
24T5.12K
12T5.12K
Calex
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DIODE S2E
Abstract: No abstract text available
Text: N T E ELE CTRONICS TNC — S2E D • I r I . C H bw .ü b 4 3 1 2 S e GQQ2b3S ‘H S H N T E t N C r f A L ,r : U B r U T-39-01 Maxim um Average Forw ard Currant Ampe) Max Peek Surge Forw ard Currant (Ampe) Maxim um Forward Vortage Drop (Volts) R ecovery
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T-39-01
110MP
100pA
T0220
OT-23
DIODE S2E
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metal rectifier diode
Abstract: DIODE S2E D026 110MP Super matched pair d041 12 pulse diode rectifier D07 15 diode diode d07 104 FAST RECOVERY DIODE 1A
Text: N T E ELECTRONICS TNC S2E D • b 4 3 1 2 S e G Q Q 2 b 3 S ‘H S H N T E T~Ö I - 0 I r I.CHbw .ü t N C r f A L ,r : U B r U O E — T-39-01 Maximum Average Forward Currant Ampe) Max Peek Surge Forward Currant (Ampe) Maximum Forward Vortage Drop (Volts)
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b4312Sel
110MP
100pA
T0220
metal rectifier diode
DIODE S2E
D026
Super matched pair
d041
12 pulse diode rectifier
D07 15 diode
diode d07 104
FAST RECOVERY DIODE 1A
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Untitled
Abstract: No abstract text available
Text: 7 D 121 NR EUPEC S5E » • Tvoenreihe/TvDe range D 121 NR Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Periodische V rrm Spitzensperrspannung Effektiver I frm sm Durchlaßstrom Dauergrenzstrom I fa v m Maximum Dermissible values
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34Q3at
D448N.
T-91-20
D1509N.
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