C67078-S1301-A5
Abstract: No abstract text available
Text: BUZ 11 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 11 S2 60 V 30 A 0.04 Ω TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter
|
Original
|
PDF
|
O-220
C67078-S1301-A5
C67078-S1301-A5
|
C67078-S1301-A2
Abstract: buz11
Text: BUZ 11 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 11 50 V 30 A 0.04 Ω TO-220 AB C67078-S1301-A2 Maximum Ratings Parameter Symbol
|
Original
|
PDF
|
O-220
C67078-S1301-A2
C67078-S1301-A2
buz11
|
C67078-S1301-A3
Abstract: BUZ11A
Text: BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 11 A 50 V 26 A 0.055 Ω TO-220 AB C67078-S1301-A3 Maximum Ratings Parameter
|
Original
|
PDF
|
O-220
C67078-S1301-A3
C67078-S1301-A3
BUZ11A
|
Untitled
Abstract: No abstract text available
Text: Si1012CR Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET: 1.2 V Rated
|
Original
|
PDF
|
Si1012CR
SC-75A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: IRFR020, IRFU020, SiHFR020, SiHFU020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252)
|
Original
|
PDF
|
IRFR020,
IRFU020,
SiHFR020
SiHFU020
O-252)
O-251)
2002/95/EC.
2002/95/EC
|
Untitled
Abstract: No abstract text available
Text: IRFR024, IRFU024, SiHFR024, SiHFU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration Single D DPAK (TO-252)
|
Original
|
PDF
|
IRFR024,
IRFU024,
SiHFR024
SiHFU024
O-252)
O-251)
|
Untitled
Abstract: No abstract text available
Text: IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • P-Channel - 250 RDS(on) () VGS = - 10 V • Surface Mount (IRFR9214, SiHFR9214) 3.0 Qg (Max.) (nC) 14 • Straight Lead (IRFU9214, SiHFU9214)
|
Original
|
PDF
|
IRFR9214,
IRFU9214,
SiHFR9214
SiHFU9214
O-252)
O-251)
|
IRLL110PBF
Abstract: IRLL110TRPBF
Text: IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel
|
Original
|
PDF
|
IRLL110,
SiHLL110
OT-223
OT-223
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
IRLL110PBF
IRLL110TRPBF
|
S13017
Abstract: No abstract text available
Text: IRFR110, SiHFR110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated
|
Original
|
PDF
|
IRFR110,
SiHFR110
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
S13017
|
IRFR912
Abstract: No abstract text available
Text: IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S
|
Original
|
PDF
|
IRFR9120,
IRFU9120,
SiHFR9120
SiHFU9120
O-252)
O-251)
IRFR912
|
Untitled
Abstract: No abstract text available
Text: IRLR024, IRLU024, SiHLR024, SiHLU024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 5.0 V 0.10 Qg (Max.) (nC) 18 Qgs (nC) 4.5 Qgd (nC) 12 Configuration Single D DPAK (TO-252)
|
Original
|
PDF
|
IRLR024,
IRLU024,
SiHLR024
SiHLU024
O-252)
O-251)
|
Untitled
Abstract: No abstract text available
Text: IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mountable (Order As IRFR9020, SiHFR9020) • Straight Lead Option (Order As IRFU9020, SiHFU9020) • Repetitive Avalanche Ratings
|
Original
|
PDF
|
IRFR9020,
IRFU9020,
SiHFR9020
SiHFU9020
O-252)
O-251)
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUM110N04-2m1P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SUM110N04-2m1P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUM110P08-11L www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SUM110P08-11L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
|
Untitled
Abstract: No abstract text available
Text: IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single DESCRIPTION
|
Original
|
PDF
|
IRFR120,
IRFU120,
SiHFR120
SiHFU120
O-252)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
sharp mask rom
Abstract: No abstract text available
Text: MEMORIES Combination Memories ★ Under development • SRAM +Flash Memory Stacked TSOP Capacity SK configuration 1M SRAM X 4M FLASH X 8 8 LR-S13011 LR-S1302 1MSRAM X 8M FLASH X 8 8 1MSRAM X 16 8M FLASH vA 1O Block) 2M SRAM 1 1 1 1 1 8M FLASH 1 1 1 BM FLASH
|
OCR Scan
|
PDF
|
LR-S13011
LR-S1302
LR-S1304
LR-S1303
LR-S1313
LR-S1306
LR-S1305A
LR-S1307
56FBGA
72FBGA
sharp mask rom
|
buz11
Abstract: 11S2 BUZ p channel buz 11 a Buz 11 BUZ11A
Text: SIEMENS BUZ 11 BUZ 11 A, BUZ 11 S2 SI PMOS Power Transistors • N channel • Enhancement mode • Avalanche-rated O VPT05381 Type VDS Id Tc Ordering Code 50 V 30 A 29 "C ^DS on 0.040 Q. Package 1> BUZ 11 TO-220 AB C67078-S1301-A2 BUZ 11 A 50 V 26 A 25 "C
|
OCR Scan
|
PDF
|
VPT05381
O-220
C67078-S1301-A2
C67078-S1301
C67078-S1301-A5
buz11
11S2
BUZ p channel
buz 11 a
Buz 11
BUZ11A
|
buz11
Abstract: transistor Buz 11 BUZ11A
Text: SIEMENS BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vqs BUZ 11 A 50 V b 26 A ^bs{on 0.055 fì Package Ordering Code TO-220 AB C67078-S1301 -A3 Maximum Ratings Parameter Symbol Continuous drain current
|
OCR Scan
|
PDF
|
O-220
C67078-S1301
buz11
transistor Buz 11
BUZ11A
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b ^DS on Package Ordering Code BUZ 11 A 50 V 26 A 0.055 a TO-220 AB G67078-S1301 -A3 Maximum Ratings Parameter Symbol Continuous drain current
|
OCR Scan
|
PDF
|
O-220
G67078-S1301
AE35b05
fl235bCIS
00fl4030
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 11 S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 11 S2 60 V 30 A ^DS on Package Ordering Code 0.04 Q TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter Symbol Values Continuous drain current
|
OCR Scan
|
PDF
|
O-220
C67078-S1301-A5
fiE35bOS
00fl4Q47
fl53SbDS
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 11 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 11 Vds 50 V ^DS on 0.04 ß hi 30 A Package Ordering Code TO-220 AB C67078-S1301-A2 Maximum Ratings Parameter Symbol Continuous drain current
|
OCR Scan
|
PDF
|
O-220
C67078-S1301-A2
6E35b05
GGfl4020
535b05
|
BUZ11S2
Abstract: buz11 siemens
Text: SIEMENS BUZ11S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vfcs to ^JS on Package Ordering Code BUZ 11 S2 60 V 30 A 0.04 £2 TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter Symbol Continuous drain current
|
OCR Scan
|
PDF
|
BUZ11S2
O-220
C67078-S1301-A5
BUZ11
BUZ11S2
buz11 siemens
|
BUP 312
Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Text: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186
|
OCR Scan
|
PDF
|
BUP200D
BUP314D
BUP410D
Q67078-A4400-A2
Q67040-A4420-A2
Q67078-A4401-A2
Q67078-A4402-A2
Q67040-A4407-A2
Q67078-A4203-A2
Q67078-A4205-A2
BUP 312
BUZ22
276 603d
BUZ 81
bup300
buz171
BUZ,350
BUZ,271
BUZ90A
|
transistor Buz 11
Abstract: buz11
Text: SIEMENS BUZ 11 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 11 Vbs 50 V h 30 A ^%>S{on 0.04 Si Package Ordering Code TO-220 AB C67078-S1301-A2 Maximum Ratings Parameter Symbol Continuous drain current
|
OCR Scan
|
PDF
|
O-220
C67078-S1301-A2
transistor Buz 11
buz11
|